• Bulletin of the Korean Chemical Society
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• 제33권10호
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• pp.3191-3195
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• 2012

New silver nanoparticle (AgNP)-loaded amino acid based hydrogels were synthesized successfully from poly (vinyl alcohol) (PVA) and poly(acryl amide-co-acryloyl phenyl alanine) (PAA) by redox polymerization. The formation of AgNP in hydrogels was confirmed by using a UV-Vis spectrophotometer and XRD. The structure and morphology of silver nanocomposite hydrogels were studied by using a scanning electron microscopy (SEM), which demonstrated scattered nanoparticles, ca. 10-20 nm. Thermogravimetric analysis revealed large differences of weight loss (i.e., 48%) between the prestine hydrogel and silver nanocomposite. The antibacterial studies of AgNP-loaded PAA (Ag-PAA) hydrogels was evaluated against Escherichia coli (Gram-negative) and Staphylococcus aureus (Gram-positive) bacteria. These Ag-PAA hydrogels showed significant activities against all the test bacteria. Newly developed hydrogels could be used for medical applications, such as artificial burn dressings.

• 한국전기전자재료학회논문지
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• 제31권5호
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• pp.341-344
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• 2018

In order to achieve a high efficiency for the silicon solar cell, a passivation characteristic that minimizes the electrical loss at a silicon interface is required. In this paper, we evaluated the applicability of the oxide film formed by ozone for the tunnel silicon oxide film. To this end, we fabricated the silicon oxide film by changing the condition of ozone oxidation and compared the characteristics with the oxide film formed by the existing nitric acid solution. The ozone oxidation was formed in the temperature range of $300{\sim}500^{\circ}C$ at an ozone concentration of 17.5 wt%, and the passivation characteristics were compared. Compared to the silicon oxide film formed by nitric acid oxidation, implied open circuit voltage (iVoc) was improved by ~20 mV in the ozone oxidation and the ozone oxidation after the nitric acid pretreatment was improved by ~30 mV.

• 전력전자학회논문지
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• 제4권2호
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• pp.166-174
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• 1999

최적효율제어를 통한 유도전동기의 효율향상은 에너지 절감측면에서 매우 중요하며 인공신경망을 사용하면 시스템의 특성이 충분히 해석되지 않은 상태에서도 우수한 제어특성을 얻을 수 있다. 본 논문은 유도전동기 구동시스템에서 최적 슬립주파수를 추종하는 실시간 인공신경망 회로를 구성하여 운전효율을 최적화하는 제어방법을 제안한다. 제안된 최적 효율제어기는 인공신경망 제어기에 의해 시스템의 비선형성을 포함하여 전동기의 내부손실이 최소가 되는 운전점을 추종한다. 시뮬레이션과 실험을 통하여 기존의 일정v/f 방식에 비하여 고속 경부하시 경제성 있는 에너지 절감효과를 충분히 확보할 수 있었다.

• Advances in materials Research
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• 제1권3호
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• pp.191-204
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• 2012

In this paper, we report on the obtention of nanocrystalline $SrMoO_4$ synthesized through modified combustion process. These powders were characterized by X-ray diffraction, Fourier Transform Raman and Infrared Spectroscopy. These studies reveal that the scheelite-type $SrMoO_4$ crystallizes in tetragonal structure with I41/${\alpha}$ (N#88) space group. Transmission electron microscopy image shows that the nanocrystalline $SrMoO_4$ powders have average size of 18 nm. The optical band gap determined from the UV-V is absorption spectra for the as prepared sample is 3.7 eV. These powders showed a strong green photoluminescence emission. The samples are sintered at a relatively low temperature of $850^{\circ}C$. The morphology of the sintered pellet is studied with scanning electron microscopy. The dielectric constant and loss factor values obtained at 5 MHz for a well sintered $SrMoO_4$ pellet has been found to be 9.50 and $7.5{\times}10^{-3}$ respectively. Thus nano $SrMoO_4$ is a potential candidate for low temperature co-fired ceramics and luminescent applications.

• 한국태양에너지학회 논문집
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• 제36권5호
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• pp.63-71
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• 2016

Installed PV module in field is affected by shading caused by various field environmental factors. Bypass diodes are installed in PV module for preventing a power loss and degradation of PV module by shading. But, Bypass diode is easily damaged by surge voltage and has often initial a defect. This paper propose the electric characteristic variation and the power prediction of PV module with damaged bypass diode. Firstly, the resistance for normal bypass diode and damaged bypass diode of resistance was measured by changing the current. When the current increases, the resistance of normal bypass diode is almost constant but the resistance of damaged bypass diode increases. Next, To estimate power of PV module by damaged bypass diode, the equation for the current is derived using solar cell equivalent circuit. Finally, the derived equation was simulated by using MatLab tools, was verified by comparing experimental data.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.297-300
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• 2001

The SMZ half-bridge converter uses the resonance between the inductance of transformer and the resonant capacitances to transfer the input power to the load. In addition to this kind of characteristic of the converter, there are some features such as the capability of soft switching operation, a lower switching loss, and a higher power density in the converter. However in the low-voltage and high-output current applications of the converter, the extremely increased output ripple voltage prevents the converter from normal operation. In order to overcome the drawback of the converter, adding the output filter inductor to the converter, the converter shows the completely different resonant characteristics. In this paper, We analyzed the resonant characteristics of the SMZ converter with the output filter inductor and investigated what the analyzed results affect the converter operation. The experiment of a I50W prototype SMZ converter with 5V output and 310V input is carried out to verity the validity of the analyzed results.

• E2M - 전기 전자와 첨단 소재
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• 제7권5호
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• pp.389-396
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• 1994

The bilayer film of Ag/a-S $e_{75.G}$ $e_{25}$ and the monolayer film of a-S $e_{75.G}$ $e_{25}$ act as a negative-type and a positive-type resist in focused ion beam lithography, respectively. Using a model which takes into account the ion stopping power, the ion projected range, the ion concentration implanted into resists and the ion transmission coefficient, etc., the ion resist parameters are calculated for a broad range of ion energies and implanted doses. Ion sources of A $r^{+}$, S $i^{++}$ and G $a^{+}$ are used to expose resists. As the calculated results, the energy loss per unit distance by Ga'$^{+}$ ion is about 10$^{3}$[keV/.mu.M] and nearly constant for all energy range. Especially, the projected range and struggling for 80[keV] G $a^{+}$ ion energy are 0.0425[.mu.m] and 0.020[.mu.m], , respectively and the resist thickness of a-S $e_{75}$ G $e_{25}$ to minimize the ion penetration rate into a substrate is 0.118[.mu.m].u.m]..u.m].

• 한국재료학회지
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• 제19권9호
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• pp.462-467
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• 2009

The Charge Trap Flash (CTF) memory device is a replacement candidate for the NAND Flash device. In this study, Pt/$Al_2O_3/La_2O_3/SiO_2$/Si multilayer structures with lanthanum oxide charge trap layers were fabricated for nonvolatile memory device applications. Aluminum oxide films were used as blocking oxides for low power consumption in program/erase operations and reduced charge transports through blocking oxide layers. The thicknesses of $SiO_2$ were from 30 $\AA$ to 50 $\AA$. From the C-V measurement, the largest memory window of 1.3V was obtained in the 40 $\AA$ tunnel oxide specimen, and the 50 $\AA$ tunnel oxide specimen showed the smallest memory window. In the cycling test for reliability, the 30 $\AA$ tunnel oxide sample showed an abrupt memory window reduction due to a high electric field of 9$\sim$10MV/cm through the tunnel oxide while the other samples showed less than a 10% loss of memory window for $10^4$ cycles of program/erase operation. The I-V measurement data of the capacitor structures indicated leakage current values in the order of $10^{-4}A/cm^2$ at 1V. These values are small enough to be used in nonvolatile memory devices, and the sample with tunnel oxide formed at $850^{\circ}C$ showed superior memory characteristics compared to the sample with $750^{\circ}C$ tunnel oxide due to higher concentration of trap sites at the interface region originating from the rough interface.

• 방사선산업학회지
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• 제11권1호
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• pp.39-45
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• 2017

A cyclotron is a kind of particle accelerator that produces a beam of charged particles for the production of medical, industrial, and research radioisotopes. More than 30 cyclotrons are operated in Korea to produce $^{18}F$, an FDG synthesis at hospitals. A 30-MeV cyclotron was installed at ARTI (Advanced Radiation Technology Institute, KAERI) mainly for research regarding isotope production. In this study, we analyze and estimate the items of risk such as the problems in the main components of the cyclotron, the loss of radioactive materials, the leakage of coolant, and the malfunction of utilities, fires and earthquakes. To estimate the occurrence frequency in an accident risk assessment, five levels, i.e., Almost certain, Likely, Possible, Unlikely, and Rare, are applied. The accident consequence level is classified under four grades based on the annual permissible dose for radiation workers and the public in the nuclear safety law. The analysis of the accident effect is focused on the radioactive contamination caused by radioisotope leakage and radioactive material leakage of a ventilation filter due to a fire. To analyze the risks, Occupation Safety and Health Acts is applied. In addition, action plans against an accident were prepared after a deep discussion among relevant researchers. In this acts, we will search for hazard and introduce the risk assessment for the research 30-MeV cyclotron facilities of ARTI.

• The Korean Journal of Physiology and Pharmacology
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• 제28권4호
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• pp.313-322
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• 2024

Mutations within the SCN5A gene, which encodes the α-subunit 5 (Na_V1.5) of the voltage-gated Na⁺ channel, have been linked to three distinct cardiac arrhythmia disorders: long QT syndrome type 3, Brugada syndrome (BrS), and cardiac conduction disorder. In this study, we have identified novel missense mutations (p.A385T/R504T) within SCN5A in a patient exhibiting overlap arrhythmia phenotypes. This study aims to elucidate the functional consequences of SCN5A mutants (p.A385T/R504T) to understand the clinical phenotypes. Whole-cell patch-clamp technique was used to analyze the Na_V1.5 current (I_Na) in HEK293 cells transfected with the wild-type and mutant SCN5A with or without SCN1B co-expression. The amplitude of I_Na was not altered in mutant SCN5A (p.A385T/R504T) alone. Furthermore, a rightward shift of the voltage-dependent inactivation and faster recovery from inactivation was observed, suggesting a gain-of-function state. Intriguingly, the co-expression of SCN1B with p.A385T/R504T revealed significant reduction of I_Na and slower recovery from inactivation, consistent with the loss-of-function in Na⁺ channels. The SCN1B dependent reduction of I_Na was also observed in a single mutation p.R504T, but p.A385T co-expressed with SCN1B showed no reduction. In contrast, the slower recovery from inactivation with SCN1B was observed in A385T while not in R504T. The expression of SCN1B is indispensable for the electrophysiological phenotype of BrS with the novel double mutations; p.A385T and p.R504T contributed to the slower recovery from inactivation and reduced current density of Na_V1.5, respectively.