• 한국세라믹학회지
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• 제40권3호
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• pp.213-218
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• 2003

Band gap energies of SrTiO$_3$(STO) thin film on glass substrates were studied in terms of annealing temperature. The STO thin film was fabricated by our newly developed method based on the combination of the Self-Assembled Monolayer(SAM) technique and the Liquid Phase Deposition(LPD) method. The as-deposited film demonstrated a direct band gap energy of about 3.65 eV, which further increased to 3.73 eV and 3.78 eV by annealing at 40$0^{\circ}C$ and 50$0^{\circ}C$, respectively. The band gap energy saturated at about 3.70 eV for the crystallized film which was obtained by annealing at 600-$700^{\circ}C$. The relatively large band gap energies of our crystallized films were due to the presence of minor amorphous phase, grain boundaries and oxygen vacancies generated by annealing in air.

• 천문학논총
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• 제5권1호
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• pp.65-84
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• 1990

The temperature effects of the KNU UBV photometric system are investigated, using the HAMAMATSU 1P21 data. The variation of the passband width of V-band with temperature is about $5{\AA}/^{\circ}C$ while those of B-band and U-band are negligible. This large effect of V-band causes a significant variation of V-mag. and (B-V)-color with temperature such as ${\sim}0.02mag/^{\circ}C$ in both cases. This result strongly suggests that in the photometric observations of binary stars, the temperature effects of the response of photomultiplier and the passband of filters must be considered to avoid the systematic variation in magnitude and color particularly at the minimum of light curve.

• EDISON SW 활용 경진대회 논문집
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• 제4회(2015년)
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• pp.388-391
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• 2015

본 연구에서는 탄소로 이루어진 그래핀과 붕소와 질소의 합성물인 h-BN을 적절하게 섞어, 밴드갭(band gap)의 변화를 범밀도함수이론(DFT)을 통하여 설계하려고 한다. 본 연구에서 태양전지의 가장 높은 효율을 가지기 위한 밴드갭 1.2eV 가지는 모델을 설계하려고 한다. Armchair 방향으로 B와 N을 도핑을 하여 width에 따른 Nanorribbons 형태를 만들어 밴드갭(band gap)의 변화를 살펴 볼 것이다. 그래핀과 h-BN을 각각 고정시키며 다른 한쪽의 width를 늘리면서 밴드갭(band gap)의 변화도 살펴 볼 것이다. 그래핀와 h-BN의 비가 5:3일 때 1.14eV로 가장 1.2eV에 비슷하게 나왔고 3:5일 때 1.12eV로 그 다음으로 가장 가까운 결과를 얻을 수 있엇다. 또한 비슷한 밴드갭을 가지더라도 그러한 원자 구조가 얼마나 안정적인지를 알기 위해 cohesive 에너지를 계산 할 것이다. 이러한 결과로 인해 태양에너지 연구에 큰 이바지를 할 수 있다.

• 반도체디스플레이기술학회지
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• 제17권2호
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• pp.12-15
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• 2018

InSb (III-V compound semiconductor) is used for photodiode to detect the mid-wavelength infrared radiation. Generally the quantum efficiency of InSb IR FPAs(Focal Plane Arrays) is known to be determined by thickness of InSb and transmittance of anti-reflection coating layer. In this study, we confirmed that the C-V characteristics of detector array affects the quantum efficiency of the InSb IR FPAs. We fabricated the IR FPAs with various $V_{fb}$(flat band voltage) values and confirmed the tendency between the $V_{fb}$ value and quantum efficiency of the IR FPAs.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2002년도 종합학술발표회 논문집 Vol.12 No.1
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• pp.69-73
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• 2002

We have designed and fabricated a low-cost, V-band CPW receiver chip set using GaAs PHEMT technology for the application of millimeter-wave wireless communication systems. Low noise amplifiers and down-converters were developed for this chip set. The fabricated low noise amplifier showed an S$\sub$21/ gain of 14.9 ㏈ at 60 ㎓ and a noise figure of 4.1 ㏈ at 52 ㎓. The down-converter exhibited a high conversion gain of 2 ㏈ at the low LO Power of 0 ㏈m. This work demonstrates that the GaAs PHEMT technology is a viable low-cost solution for V-band applications.

• 한국전자통신학회논문지
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• 제18권2호
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• pp.259-268
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• 2023

본 논문에서는 2.4GHz 밴드 무선 접속 기술을 2.4/5GHz 이중대역을 지원하는 기술을 이용하여 유선의 한계성을 극복할 수 있는 무선 서비스 제공으로 무선 공공서비스의 품질을 향상시키고자 한다. 무선 CCTV 구축시 발생되는 유지 보수 비용을 절감 시키고, 기존 유선 CCTV와 연동 가능해져 CCTV를 이용한 A/V 감시시스템 서비스 영역을 확대에 대해 연구한다.

• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1273-1277
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• 2003

The effects of molecular structure on the redox properties are explored by the cyclic voltammetry, constant current potentiometry and spectroscopy using the thin films of organic electroluminescence materials of Poly(N-vinylcarbazole); PVK and 2- (4'-tert-butylphenyl) -5-(4"-bisphenyl) -1,3,4-oxadiazole; PBD. The UV/visible absorption maxima and band gap (E$\_$g/) show at 310nm (4.00eV) and 368nm (3.37eV) for FBD, 344nm (3.60eV) and 356nm (3.48eV) for PVK, respectively. The measured electrochemical ionization potential (IP) and electron affinity (EA) of these materials we 5.87 and 2.82eV for PBD, 5.80 and 3.17eV for PVK, respectively. The electrical band gaps are 3.05eV for PBD and 2.78eV for PVK, respectively. The electrical hole gap and electron gap with respect to the first rising potentials and the inflection potentials are obtained to be 0.39V and 0.41V for PBD, 0.25V and 0.28V for FVK, respectively.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2001년도 종합학술발표회 논문집 Vol.11 No.1
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• pp.227-230
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• 2001

본 논문은 마이크로파 슈퍼헤테로다인 수신기에서 발생되는 이미지성분을 효과적으로 제거하기위한 Cascode형 FETs구조를 이용한 Ku-Band 이미지 제거용 자기발진믹서을 분석하였다. 자기발진믹서는 두개의 FET에 의해서 동작되며 상위 FET는 유전체공진기에 의해서 발진기로 동작하며, 아래쪽 FET는 믹서로 동작시켰다. 모의실험 결과 초기 게이트바이어스 전압은 $V_{ gsl}$=-0.4V와 $V_{g2}$=-0.4V와 $V_{g2}$V선정 하였으며, 10.75GHz의 발진기 출력은 2.249dBm, 위상잡음은 -137.9dBc/1000KHz, 이미지 제거특성은 약 -26dBc 값을 얻었다.얻었다.

• 한국전기전자재료학회논문지
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• 제11권6호
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• pp.442-446
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• 1998

$\alpha$--sulfur single crystal which has orthorohmbic structure was grown using Bridgman method. The indirect optical energy band gap of this crystal are 2.65 and 2.82 eV at 10 and 300K, respectively. The wavelengths of photoluminecence(PL) peaks are 543 and 596 nm at 10k, By thermally stimulated current (TSC) method, two electron traps($D_1,D_2$) located at 0/23 and 0.43eV below the conduction band and a hole trap(A) located at 0.31 eV above the valence band are observed. PL mechanism of $\alpha$-sulfur single crystal is analyzed using the values of optical energy band gap at 10k two electron traps and a hole trap.

• E2M - 전기 전자와 첨단 소재
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• 제9권5호
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• pp.445-449
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• 1996

Structural and optical characteristics in Se thin film fabricated by EBE method had been studied. Se thin film was deposited with noncrystalline until substrate temperature of >$100^{\circ}C$ Color of its surface had red genealogy, and its optical energy band gap was about 2.45 eV. But Se film was grown with monoclinic at substrate temperature of over >$150^{\circ}C$ Also, color of its surface had gray genealogy, and its optical energy band gap was about 2.31 eV. Finally, after heat-treatment at >$150^{\circ}C$ for 15 min with substrate temperature of >$100^{\circ}C$ noncrystalline Se was proved to be hexagonal, and color of its surface had dark gray genealogy, and its optical energy band gap was about 2.06 eV. From the results, it was known that Se thin film for photoelectric device with the lowest optical energy band gap was accepted from hexagonal structure.