• 제목/요약/키워드: V/C ratio

검색결과 1,327건 처리시간 0.026초

Development of Blue Musel Hydrolysate as a Flavouring

  • Cha, Yong-Jun;Kim, Hun;Kim, Eun-Jeong
    • Preventive Nutrition and Food Science
    • /
    • 제3권1호
    • /
    • pp.10-14
    • /
    • 1998
  • The hydrolysis conditions of blue mussel were evaluated by response surface methodology(RSM) for the alkaline protease Optimise TM APL-440 . Conditions favoring the highest degree of hydrolysis in blue mussel were pH 9,8, 58$^{\circ}C$ reaction temperature, 2,9 hrs reaction time, 46.8%(w/v) substrate concentration, and 0.34%(v/w) enzym $e_strate ratio. Levels of n-3 fatty acids, e.g.C18 : 3, C18 : 4, and C20 : 5, did not change after hydrolysis in blue mussel sample.le.

  • PDF

RF 스퍼터링으로 증착된 a-Si$_{1-x}$C$_{x}$: H 박막의 결합구조와 광학적 성질에 미치는 증착변수의 영향 (Effects of Deposition Parameters on the Bonding Structure and Optical Properties of rf Sputtered a-Si$_{1-x}$C$_{x}$: H films)

  • 한승전;권혁상;이혁모
    • 한국표면공학회지
    • /
    • 제25권5호
    • /
    • pp.271-281
    • /
    • 1992
  • Amorphous hydrogenated silicon carbide(a-Si1-xCx : H) films have been prepared by the rf sputtering using a silicon target in a gas mixture of Argon and methane with varying methane gas flow rate(fCH) in the range of 1.5 to 3.5 sccm at constant Argon flow rate of 30sccm and rf power in the range of 3 to 6 W/$\textrm{cm}^2$. The effects of methane flow rate and rf power on the structure and optical properties of a-Si1-xCx : H films have been analysed by measuring both the IR absorption spectrum and the UV transmittance for the films. With increasing the methane flow rate, the optical band gap(Eg) of a-Si1-xCx : H films increases gradually from 1.6eV to the maximum value of 2.42eV at rf power of 4 W/$\textrm{cm}^2$, which is due to an increases in C/Si ratio in the films by an significant increase in the number of C-Hn bonds. As the rf power increases, the number of Si-C and Si-Hn bonds increases rapidly with simultaneous reduction in the number of C-Hn bonds, which is associated with an increase in both degree of methane decomposition and sputtering of silicon. The effects of rf power on the Eg of films are considerably influenced by the methane flow rate. At low methane flow rate, the Eg of films decreased from 2.3eV to 1.8eV with the rf power. On the other hand, at high methane flow rate, that of films increased slowly to 2.4eV.

  • PDF

Optimization of Indole-3-acetic Acid (IAA) Production by Bacillus megaterium BM5

  • Lee, Jae-Chan;Whang, Kyung-Sook
    • 한국토양비료학회지
    • /
    • 제49권5호
    • /
    • pp.461-468
    • /
    • 2016
  • One of the important phytohormones produced by plant growth promoting bacteria is the auxin; indole-3-acetic acid (IAA), with L-tryptophan as the precursor. In this study, we focused on the investigation of optimal conditions for the production of IAA by Bacillus megaterium BM5. We investigated culturing conditions, such as incubation temperature, pH of the culture medium and incubation period, with varying media components such as inoculation volume, tryptophan concentration and carbon and nitrogen source. Besides, optimization study intended for high IAA production was carried out with fermentation parameters such as rpm and aeration. The initial yield of $42{\mu}g\;IAA\;ml^{-1}$ after 24 hr increased to $85{\mu}g\;ml^{-1}$ when 5% (v/v) of L-tryptophan was used in the culture broth. The maximum yield of $320{\mu}g\;IAA\;ml^{-1}$ was observed in trypticase soy broth (TSB) supplemented with starch and soybean meal as C and N sources with a C/N ratio of 3:1 (v/v) at $30^{\circ}C$, pH 8.0 for 48 hrs with 1.0 vvm and 250 rpm in 5 L working volume using 10 L scale fermenter. The bacterial auxin extracted from the culture broth was confirmed by thin layer chromatography and high-performance liquid chromatography and effect on plant growth was confirmed by root elongation test.

저전력 오디오 응용을 위한 Class-C 인버터 사용 단일 비트 3차 피드포워드 델타 시그마 모듈레이터 (A Single-Bit 3rd-Order Feedforward Delta Sigma Modulator Using Class-C Inverters for Low Power Audio Applications)

  • 황준섭;천지민
    • 한국정보전자통신기술학회논문지
    • /
    • 제15권5호
    • /
    • pp.335-342
    • /
    • 2022
  • 본 논문에서는 오디오 애플리케이션을 위한 단일 비트 3차 피드포워드 델타 시그마 변조기를 제안한다. 제안된 변조기는 저전압 및 저전력 애플리케이션을 위한 클래스-C 인버터를 기반으로 한다. 고정밀 요구 사항을 위해 레귤레이티드 캐스코드 구조의 클래스-C 인버터는 DC 이득을 증가시키고 저전압 서브쓰레스홀드 증폭기 역할을 한다. 제안된 클래스-C 인버터 기반 변조기는 180nm CMOS 공정으로 설계 및 시뮬레이션되었다. 성능 손실이 없으면서 낮은 공급 전압 호환성을 가지도록 제안된 클래스-C 인버터 기반 스위치드 커패시터 변조기는 높은 전력 효율을 달성하였다. 본 설계는 20kHz의 신호 대역폭 및 4MHz의 샘플링 주파수에서 동작시켜 93.9dB의 SNDR, 108dB의 SNR, 102dB의 SFDR 및 102dB의 DR를 달성하면서 0.8V 전원 전압에서 280μW의 전력 소비만 사용한다.

공명 투과 구조의 MOCVD 성장 및 특성에 관한 연구 (A Study on the MOCVD Growth and Characterization of Resonant Tunneling Structures)

  • 류정호;서광석
    • 한국통신학회논문지
    • /
    • 제18권7호
    • /
    • pp.1036-1043
    • /
    • 1993
  • 대기압 MOCVD방법으로 이중 장벽 구조의 공명 투과 소자를 제작하여 상온과 77K에서의 부저항 특성을 특정하였다. GaAs 양자 우물과 spacer, AIGaAs 장벽을 사용하여 성장온도를 변화시켜 공명 투과 소자를 제작한 결과 상온에서 2.35, 77K에서 15.3의 높은 peak-to-valley 전류비를 얻었다 컴퓨터 모의 실험에서는 coherent 투과만을 고려하여 peak 전류를 계산해서 실험치와 잘 일치하는 것을 알 수 있었다. AlGaAs 장벽에 InGaAs 양자 우물과 spacer를 사용하여 전자의 공급량을 증가시킨 구조에서는 상온에서 8.6KA/cm의 높은 peak 전류와 4.0의 큰 peak-to-valley 전류비를 얻었다.

  • PDF

Growth of GaAs by Chemical Beam Epitaxy Using Unprecracked Arsine and Trimethylgallium

  • Park, Seong-Ju;Ro, Jeong-Rae;Sim, Jae-Ki;Lee, El-Hang
    • ETRI Journal
    • /
    • 제16권3호
    • /
    • pp.1-10
    • /
    • 1994
  • Undoped GaAs has been successfully grown by chemical beam epitaxy (CBE) via surface decomposition process using arsine $(AsH_3)$ and trimethylgallium (TMG). Three distinct regions of temperature-dependent growth rates were identified in the range of temperatures from 570 to $690^{\circ}C$. The growth rates were found strongly dependent on the V/III ratio between 5 and 30. The growth rate at low V/III ratio seems to be determined by arsenic produced on the surface, whereas at high V/III ratio it shows dependence on the adsorption of TMG. Hall measurement and photoluminescence (PL) analysis show that the films are all p-type and that carbon impurities are primarily responsible for the background doping. Carbon concentrations have been found to be reduced by two orders of magnitude as compared to those of epilayers grown by CBE which employs TMG and arsenic obtained from precracked $AsH_3$ in a high temperature cell. It was also found that hydrogen atoms dissociated from unprecracked $AsH_3$ play an important role in removing hydrocarbon-containing species resulting in a significant reduction of car-bon impurities.

  • PDF

철근콘크리트 원형 교각의 전단성능에 대한 횡방향철근의 영향 (Effect of Transverse Steel on Shear Performance for RC Bridge Columns)

  • 고성현
    • 한국지진공학회논문집
    • /
    • 제25권5호
    • /
    • pp.191-199
    • /
    • 2021
  • In seismic design, hollow section concrete columns offer advantages by reducing the weight and seismic mass compared to concrete section RC bridge columns. However, the flexure-shear behavior and spirals strain of hollow section concrete columns are not well-understood. Octagonal RC bridge columns of a small-scale model were tested under cyclic lateral load with constant axial load. The volumetric ratio of the transverse spiral hoop of all specimens is 0.00206. The test results showed that the structural performance of the hollow specimen, such as the initial crack pattern, initial stiffness, and diagonal crack pattern, was comparable to that of the solid specimen. However, the lateral strength and ultimate displacement of the hollow specimen noticeably decreased after the drift ratio of 3%. The columns showed flexure-shear failure at the final stage. Analytical and experimental investigations are presented in this study to understand a correlation confinement steel ratio with neutral axis and a correlation between the strain of spirals and the shear resistance capacity of steel in hollow and solid section concrete columns. Furthermore, shear strength components (Vc, V, Vp) and concrete stress were investigated.

Influence of gas mixture ratio on the secondary electron emission coefficient ($\gamma$) fo MgO single crystals and MgO protective layer in AC PDP

  • Lim, Jae-Yong;Jung, J.M.;Choi, M.C.;Ahn, J.C.;Cho, T.S.;Kim, T.Y.;Kim, S.S.;Jung, M.W.;Choi, S.H.;Kim, S.B.;Ko, J.J.;Kim, D.I.;Lee, C.W.;Seo, Y.;Cho, G.S.;Kang, S.O.
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
    • /
    • pp.145-147
    • /
    • 2000
  • The secondary electron emission coefficient y of MgO single crystal according to the gas mix-ture ratio of Xe, $N_2$ to Ne have been investigated by $\gamma$-focused ion beam system. It is found that the MgO single crystals of (111) crystallinity has the highest $\gamma$ for operating Ne(Xe) ions ranging from 50eV to 200eV throughout this experiment. And it is found that the $\gamma$ for gas mixtures are much smaller than pure Ne ions.

  • PDF

$(Ba,Ca)(TiZr)O_3$ 세라믹을 적용한 적층 칩 커패시터의 전기적 특성 (The Electric Properties of Multilayer Ceramic Capacitors with $(Ba,Ca)(TiZr)O_3$ Ceramics)

  • 윤종락;여동훈;이현용;이석원
    • 대한전기학회논문지:전기물성ㆍ응용부문C
    • /
    • 제55권1호
    • /
    • pp.1-5
    • /
    • 2006
  • The effect of A/B moi ratios and sintering temperatures on dielectric properties and microstructure of $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_3$ ceramics were investigated. The dielectric constant decreased with increasing the A/B mol ratio. However, the dielectric loss is improved. As the dielectric properties of A/B mol ratio with m = 1.009 at sintered temperature $1260^{\circ}C$, we obtained dielectric constant 12,800, dielectric loss $3.5\%$ and Y5V temperature characteristics. Highly reliable Ni-MLCCs, 1.6mm$(length){\time}0.8mm(width){\time}0.8mm$(height) with capacitance of 1.23 ${\mu}F$ and 야ssipation loss of $5.2\%$ were obtained employing dielectric material composed of $(Ba_{0.93}Ca_{0.07})_{1.009}(Ti_{0.82}Zr_{0.18})O_3$ - $MnO_2\;0.2wt\%-Y_2O_3\;0.18wt\%,\;-\;SO_2\;0.15wt\%-(Ba_{0.4}Ca_{0.6})SiO_3\;1wt\%$.

Cd$_{0.96}$Ze$_{0.04}$Te 박막의 전기 광학적 특성 (The electrical and optical properties of Cd$_{0.96}$Ze$_{0.04}$Te thin films)

  • 김선옥;현준원
    • 한국표면공학회지
    • /
    • 제31권6호
    • /
    • pp.389-392
    • /
    • 1998
  • We have investigated the crystal properties of the Cd0.96Zn0.04Te(CZT) films evaporated on the Si(100) substrates by Elecctron Beam Evaporator(EBE) techique. The compositions of the As-preared films were different about 4% of atomic ratio, The films stucture was observad to be polycrystalline in cubic phase. Diffraction peaks were notable at the substrate temperature of $300^{\circ}C$. The reflectance measurements yield $E_1$=3.25~3.29 eV $E_1$+${\Delta}_1$=3.76~3.83 eV and $E_2$=5.08 eV,showing that the films wear in cubic phase. For the film evaporated at the substrate temperature of $150^{\circ}C$, the peaks of photocurrent are at 720nm and 980nm.

  • PDF