• Title/Summary/Keyword: Ultra-low temperature

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Fabrication of ZrB2-based Composites for Ultra-high Temperature Materials (초고온 소재용 ZrB2계 복합소재의 제조)

  • Kim, Seong-Won;Chae, Jung-Min;Lee, Sung-Min;Oh, Yoon-Suk;Kim, Hyung-Tae;Nahm, Sahn
    • Journal of Powder Materials
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    • v.16 no.6
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    • pp.442-448
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    • 2009
  • $ZrB_2$-based composites are candidate materials for ultra-high temperature materials (UHTMs). $ZrB_2$ has become an indispensable ingredient in UHTMs, due to its high melting temperature, relatively low density, and excellent resistance to thermal shock or oxidation. $ZrB_2$ powders are usually synthesized by solid state reactions such as carbothermal, borothermal, or combined carbothermal reaction. SiC is added to this system in order to enhance the oxidation resistance of $ZrB_2$. In this study, $ZrB_2$?based composites were successfully synthesized and densified through two different processing paths. $ZrB_2$ or $ZrB_2$ 25 vol.%SiC was fully synthesized from oxide starting materials with reducing agents after heat treatment at 1400$^{\circ}C$. Besides, $ZrB_2$?20 vol.%SiC was fully densified with $B_4C$ as a sintering additive after hot pressing at 1900$^{\circ}C$. The synthesis mechanism and the effect of sintering additives on densification of $ZrB_2$ ?SiC composites were also discussed.

An Experimental Study on the a Light Device which Adopt Safety Ultra Constant Dischange Lamp (초정압 방전램프(UCD)를 적용한 안전 조명 장치에 관한 연구)

  • Jeong, Poong-Gi;Kim, Young-Chul
    • Proceedings of the Safety Management and Science Conference
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    • 2010.11a
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    • pp.63-80
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    • 2010
  • This paper describes the development of various lighting equipment adapting Ultra Constant Discharge Lamp that has newly been on commercial supply in the market. Meeting the required conditions of lighting equipment, various types of UCD Lamp equipment with excellent performances could be successfully developed. In order to provide a guideline for the economical lighting product selection, the analyzed data comparison between Hi-pressure Sodium Lamp which has been the most popular lamp for street lighting and UCD Lamp is provided. The conclusions of the study are made as follows; (1) The performance measurement result of UCD Lamp shows excellent Luminous Efficacy as 108Lm/W, daylight-like Color Rendering Index as 90Ra, and the best operating temperature range as $-50^{\circ}C{\sim}+85^{\circ}C$. Comparing to the Hi-pressure Sodium Lamp, UCD could be evaluated as much superior products. (2) In an assembled status with the lighting fixture (Type STB형-60W), UCD Lamp was tested OK for one hour duration at the temperature range form $-50^{\circ}C$ to $+85^{\circ}C$ and the humidity of 98%. The operation at the extremely low temperature can be an excellent feature to enable the export to the cold temperature regions such as Northern Europe and Russia and the specific applications for defense systems and special industry. (3) As UCD Lamp is a genuine Korea made product following Energy-saving and Eco-friendly policy, it should be appreciated as one of the best $CO^2$ reduction Green product.

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An Experimental Study on the a Light Device which Adopt Safety Ultra Constant Dischange Lamp (초정압 방전램프(UCD)를 적용한 안전조명 장치에 관한 연구)

  • Jeong, Poong-Gi;Kim, Young-Chul
    • Journal of the Korea Safety Management & Science
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    • v.12 no.4
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    • pp.41-51
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    • 2010
  • This paper describes the development of various lighting equipment adapting Ultra Constant Discharge Lamp that has newly been on commercial supply in the market. Meeting the required conditions of lighting equipment, various types of UCD Lamp equipment with excellent performances could be successfully developed. In order to provide a guideline for the economical lighting product selection, the analyzed data comparison between Hi-pressure Sodium Lamp which has been the most popular lamp for street lighting and UCD Lamp is provided. The conclusions of the study are made as follows; (1) The performance measurement result of UCD Lamp shows excellent Luminous Efficacy as 108Lm/W, daylight-like Color Rendering Index as 90Ra, and the best operating temperature range as $-50^{\circ}C{\sim}+85^{\circ}C$. Comparing to the Hi-pressure Sodium Lamp, UCD could be evaluated as much superior products. (2) In an assembled status with the lighting fixture (Type STB형-60W), UCD Lamp was tested OK for one hour duration at the temperature range form $-50^{\circ}C$ to $+85^{\circ}C$ and the humidity of 98%. The operation at the extremely low temperature can be an excellent feature to enable the export to the cold temperature regions such as Northern Europe and Russia and the specific applications for defense systems and special industry. (3) As UCD Lamp is a genuine Korea made product following Energy-saving and Eco-friendly policy, it should be appreciated as one of the best $CO^2$ reduction Green product.

Fabrication of Oxide Thin Films Using Nanoporous Substrates (나노기공성 기판을 사용한 산화물박막의 제조)

  • Park, Yong-Il;Prinz, Fritz B.
    • Journal of the Korean Ceramic Society
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    • v.41 no.12 s.271
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    • pp.900-906
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    • 2004
  • Solid oxide fuel cells have a limitation in their low-temperature application due to the low ionic conductivity of electrolyte materials and difficulties in thin film formation on porous gas diffusion layer. These problems can be solved by improvement of ionic conductivity through controlled nanostructure of electrolyte and adopting nanoporous electrodes as substrates which have homogeneous submicron pore size and highly flattened surface. In this study, ultra-thin oxide films having submicron thickness without gas leakage are deposited on nanoporous substrates. By oxidation of metal thin films deposited onto nanoporous anodic alumina substrates with pore size of $20nm{\sim}200nm$ using dc-magnetron sputtering at room temperature, ultra-thin and dense ionic conducting oxide films with submicron thickness are realized. The specific material properties of the thin films including gas permeation, grain/gran boundaries formation, change of crystalline structure/microstructure by phase transition are investigated for optimization of ultra thin film deposition process.

A Study of the Affected Layer and Stress Corrosion Crack of Ultra-high-strength Steel (300M) for Aircraft Parts (항공기용 초고장력강(300M) 부품의 가공변질층과 응력부식균열에 관한 연구)

  • Ahn, Jinwoo;Kim, Taehwan
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.19 no.4
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    • pp.1-8
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    • 2020
  • Mechanical components that support structures in aerospace and power generation industries require high-strength materials. Particularly, in the aerospace industry, aluminum alloys, titanium alloys, and composite materials are increasingly used due to their high maneuverability and durability to withstand low temperature extreme environments; however, ultra-high-strength steel is still used in key components under heavy loads such as landing gears. In this paper, the fault cause analysis and troubleshooting of aircraft parts made of ultra-high-strength steel (300M) broken during normal operation are described. To identify the cause of the defect, a temporary inspection of the same aircraft was performed, and material testing, non-destructive inspection, microstructure examination, and fracture area inspection of the damaged parts were performed. Fracture analysis results showed that a crack in the shape of a branch developed from the tool mark in the direction of the intergranular strain. Based on the results, the cause of fracture was confirmed to be stress corrosion.

The Influence of Electron Beam Irradiation due to Conductivity in the Low Density Polyethylene (저밀도 폴리에틸렌의 도전율에 미치는 전자선 조사의 영향)

  • 조경순;김이두;신현택;이수원;이종필;홍진웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.191-194
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    • 1998
  • In this paper, the physical and conductivity properties due to the electron beam irradiation for low density polyethylene using insulating materials of the distribution cable and ultra-high voltage cable are studied. The specimens of the low density polyethylene of thickness 100[$\mu\textrm{m}$] irradiated as each 1 [Mrad], 2[Mrad], 4[Mrad], 8[Mrad], 16[Mrad] and virgin are used in this experiment. In order to measure the conductivity properties, the micro electrometer is used, the range of temperature and app1ying voltage are 20 to 120[$^{\circ}C$], from 100 to 1000[V] respectively So. as a result of the conductivity properties, it is confirmed that the conductivity is increased nearly to 50[$^{\circ}C$], and is not changed until the crystalline melting point from the temperature over 60[$^{\circ}C$] because of the defects of morphology and the formation of many trap centers by means of electron beam irradiation

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Electrothermal Analysis for Super-Junction TMOSFET with Temperature Sensor

  • Lho, Young Hwan;Yang, Yil-Suk
    • ETRI Journal
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    • v.37 no.5
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    • pp.951-960
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    • 2015
  • For a conventional power metal-oxide-semiconductor field-effect transistor (MOSFET), there is a trade-off between specific on-state resistance and breakdown voltage. To overcome this trade-off, a super-junction trench MOSFET (TMOSFET) structure is suggested; within this structure, the ability to sense the temperature distribution of the TMOSFET is very important since heat is generated in the junction area, thus affecting its reliability. Generally, there are two types of temperature-sensing structures-diode and resistive. In this paper, a diode-type temperature-sensing structure for a TMOSFET is designed for a brushless direct current motor with on-resistance of $96m{\Omega}{\cdot}mm^2$. The temperature distribution for an ultra-low on-resistance power MOSFET has been analyzed for various bonding schemes. The multi-bonding and stripe bonding cases show a maximum temperature that is lower than that for the single-bonding case. It is shown that the metal resistance at the source area is non-negligible and should therefore be considered depending on the application for current driving capability.

Low temperature pulsed ion shower doping for poly-Si TFT on plastic

  • Kim, Jong-Man;Hong, Wan-Shick;Kim, Do-Young;Jung, Ji-Sim;Kwon, Jang-Yeon;Noguchi, Takashi
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.95-97
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    • 2004
  • We studied a low temperature ion doping process for poly-Si Thin Film Transistor (TFT) on plastic substrates. The ion doping process was performed using an ion shower system, and subsequently, excimer laser annealing (ELA) was done for the activation. We have studied the crystallinity of Si surface at each step using UV-reflectance spectroscopy and the sheet resistance using 4-point probe. We found that the temperature has increased during ion shower doping for a-Si film and the activation has not been fulfilled stably because of the thermal damage against the plastic substrate. By trying newly a pulsed ion shower doping, the ion was efficiently incorporated into the a-Si film on plastic substrate. The sheet resistance decreased with the increase of the pulsed doping time, which was corresponded to the incorporated dose. Also we confirmed a relationship between the crystallinity and the sheet resistance. A sheet resistance of 300 ${\Omega}$/sq for the Si film of 50nm thickness was obtained with a good reproducibility. The ion shower technique is a promising doping technique for ultra low temperature poly-Si TFTs on plastic substrates as well as those on glass substrates.

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Ultra Grain Refinement and High Strengthening of Deoxidized Low-Phosphorous Copper by Accumulative Roll-Bonding Process (ARB법에 의한 인탈산동의 결정립초미세화 및 고강도화)

  • Lee, Seong-Hee;Han, Seung-Zeon;Lim, Cha-Yong
    • Korean Journal of Materials Research
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    • v.16 no.9
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    • pp.592-597
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    • 2006
  • A deoxidized low-phosphorous (DLP) copper was processed by accumulative roll-bonding (ARB) for ultra grain refinement and high strengthening. Two copper sheets 1 mm thick, 30 mm wide and 300 mm long are first degreased and wire-brushed for sound bonding. The sheets are then stacked to each other, and roll-bonded by about 50% reduction rolling without lubrication at ambient temperature. The bonded sheet is then cut to the two pieces of same dimensions and the same procedure was repeated to the sheets up to eight cycles (${\varepsilon}{\sim}6.3$). TEM observation revealed that ultrafine grains were developed after the 4th cycle, and their size decreased at higher cycles. Tensile strength of the copper increased with the equivalent strain, and it reached 547 MPa which was 3 times higher than that of the initial material. It is concluded that the ARB process is an effective method for high strengthening of the DLP copper.

Ultra shallow $p^{+}$n junction formation using the boron diffusin form epi-co silicide (에피 코발트 실리사이드막으로 부터의 붕소 확산을 이용한 극저층 $p^{+}$n 접합 형성)

  • 변성자;권상직;김기범;백홍구
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.7
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    • pp.134-142
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    • 1996
  • The epi-CoSi$_{2}$ layer was formed by alloying a Co(120$\AA$)/Ti(50$\AA$) bilayer. In addition, the ultra shallow p$^{+}$n junction of which depth is about not more than 40nm at the background concentration, 10$^{18}$atoms/cm$^{3}$ could be formed by annealing (RTA-II) the ion implanted epi-silicide. When the temperature of RTA-I is as low as possible and that of RTA-II is moderate, the p$^{+}$n junction that has low leakage current and stable epi-silicide layer could be obtained. That is, when th econdition of TRA-I was 900$^{\circ}C$/20sec and that of RTA-II was 900$^{\circ}C$/10sec, the reverse leakage current was as high as 11.3$\mu$A/cm$^{2}$ at -5V. The surface of CoSi$_{2}$ appeared considerably rough. However, when the conditon of RTA-I was 800$^{\circ}C$/20sec or 700$^{\circ}C$/20sec, the leakage currents were as low as 8.3nA/cm$^{2}$ and 9.3nA/cm$^{2}$, respectively and also the surfaces appeared very uniform.

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