• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.57.2-57.2
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• 2009

퍼클로레이트 이온($ClO_4^-$)는 자연적으로 혹은 인공적으로 만들어지며 퍼클로릭산이나 암모늄 퍼클로레이트나, 포타슘 퍼클로레이트 혹은 소듐퍼클로레이트 염의 형태로 존재하며, 물에 아주 잘 녹고, 끓여도 제거되지 않으며, 활성 탄소와 같은 광물에도 흡착 되지 않는 성질로 인해, 기존 물리적인 정수 방법으로는 제거하기 어렵다. 또한 우리 몸에 흡수되면, 요오드가 갑상선에 흡수되는 작용을 방해하여 갑상선 기능장애를 초래한다. 이러한 퍼클로레이트 이온의 제거방법으로는 이온교환법이나 생물학적 방법 등이 개발되어져 있으나, 제거 시스템에 이동 및 안전한 농도까지 제거 등의 문제점으로 인한 퍼클로레이트 이온을 환원시키는 촉매 환원 반응에 의한 퍼클로레이트 이온 제거 기술 개발이 필요하다. 이런 촉매 환원에 필요한 수소 환원제를 발생시키기 위해서, 본 연구에서는 Carbon felt 위에 DC magnetron sputtering에 의한 thin film $TiO_2$과 regine을 이용한 powder $TiO_2$ 시편을 제작하였다. 이렇게 제작 된 $TiO_2$/Carbon felt의 미세구조 및 특성은 XRD, SEM, UV-vis-NIR 등을 통하여 분석하였다. UV 조사에 의해 $TiO_2$/Carbon felt 시편의 산소와 수소 발생과 DC bias의 걸어주었을 때 산소와 수소 발생 차이 등을 비교하였고, 이에 따른 퍼클로 레이트 이온의 분해 영향을 알아보았다.

• Korean Journal of Metals and Materials
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• v.48 no.12
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• pp.1109-1115
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• 2010

ZnO thin films were deposited on Si(100) substrates at low temperatures ($44^{\circ}C{\sim}210^{\circ}C$) by atomic layer deposition using DEZn (diethyl zinc) and water as precursors. The film thickness was measured by ellipsometry calibrated with cross-sectional TEM. The phase formation, microstructure evolution, UV-absorbance, and chemical composition changes were examined by XRD, SEM, AFM, TEM, UV-VIS-NIR, and AES, respectively. A uniform amorphous ZnO layer was formed even at $44^{\circ}C$ while stable crystallized ZnO films were deposited above $90^{\circ}C$. All the samples showed uniform surface roughness below 3 nm. Fully crystallized ZnO layers with a band-gap of 3.37 eV without carbon impurities can be formed at substrate temperatures of less than $90^{\circ}C$.

• Clean Technology
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• v.21 no.4
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• pp.235-240
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• 2015

In this study, vanadium dioxide was doped with titanium (0~0.5 at %) to improve thermochromic properties. The titanium doped vanadium dioxide (Ti-VO₂) particles were prepared via thermolysis process using vanadyl sulfate, ammonium bicarbonate and titianium chloride as precursors. The crystal structure, morphology, chemical bonding and thermochromic properties were investigated by using XRD, FE-SEM, XPS, DSC and UV-Vis-NIR spectroscopy. It was found that titanium was successfully doped into the crystal lattice of VO₂ and the obtained Ti-VO₂ particles have monoclinic structure. With increasing Ti concentration, the particle size and phase transition temperature of Ti-VO₂ particles decreased and NIR switching efficiency increased.

• Korean Journal of Metals and Materials
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• v.46 no.2
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• pp.88-96
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• 2008

Thermal evaporated 10 nm-$Ni_{50}Co_{50}$/(70 nm-poly)Si films were deposited to examine the energy saving properties of silicides formed by rapid thermal annealing at temperature ranging from 500 to $1,100^{\circ}C$ for 40 seconds. Thermal evaporated 10 nm-Ni/(70 nm-poly)Si films were also deposited as a reference using the same method for depositing the 10 nm-$Ni_{50}Co_{50}$/(70 nm-poly)Si films. A four-point probe was used to examine the sheet resistance. Transmission electron microscopy (TEM) and X-ray diffraction XRD were used to determine cross sectional microstructure and phase changes, respectively. UV-VIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were used to examine the near-infrared (NIR) and middle-infrared (MIR) absorbance. TEM analysis confirmed that the uniform nickel-cobalt composite silicide layers approximately 21 to 55 nm in thickness had formed on the single and polycrystalline silicon substrates as well as on the 25 to 100 nm thick nickel silicide layers. In particular, nickel-cobalt composite silicides showed a low sheet resistance, even after rapid annealing at $1,100^{\circ}C$. Nickel-cobalt composite silicide and nickel silicide films on the single silicon substrates showed similar absorbance in the near-IR region, while those on the polycrystalline silicon substrates showed excellent absorbance until the 1,750 nm region. Silicides on polycrystalline substrates showed high absorbance in the middle IR region. Nickel-cobalt composite silicides on the poly-Si substrates annealed at $1,000^{\circ}C$ superior IR absorption on both NIR and MIR region. These results suggest that the newly proposed $Ni_{50}Co_{50}$ composite silicides may be suitable for applications of IR absorption coatings.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.453-457
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• 2007

Zinc oxide (ZnO) and Ga doped zinc oxide (GZO) with different thickness in range of 10nm to 100nm are prepared on glass substrate by RF magnetron sputtering at room temperature. The structural and optical properties of the thin films is evaluated. The structural properties of ZnO and GZO are investigated by Tunneling Electron Microscopy (TEM) and scanning electron microscopy (SEM). Optical properties are also investigated by UV-VIS-NIR spectrophotometer (200$\sim$1400nm). The much larger grain size of ZnO compared to GZO decreased the light scattering at the grain boundary and improved the transmittance. The transmittance of ZnO is higher than that of GZO through all of the ranges of wavelengths. In case of over 50nm, we found that the transmittance of ZnO is 20% higher than that of GZO.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.1
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• pp.101-112
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• 2015

II~VI compound semiconductors, $Zn_xCd_{1-x}S$ thin films have been synthesized onto indium-tin-oxide(ITO) coated glass substrates using thermal evaporation technique. The composition ratio x($0{\leq}x{\leq}1$) was varied to fabricate different kinds of $Zn_xCd_{1-x}S$ thin films including CdS(x=0) and ZnS(x=1) thin films. Then, the deposited thin films were thermally annealed at $400^{\circ}C$ to enhance their crystallinity. The chemical composition and electronic structure of films were investigated by using X-ray photoelectron spectroscopy(XPS). The optical energy gaps of the samples were determined by ultra violet-visible-near infrared(UV-Vis-NIR) spectroscopy and were found to vary in the range of 2.44 to 3.98 eV when x changes from 0 to 1. Finally, we measured the THz characteristics of the $Zn_xCd_{1-x}S$ thin films using THz-TDS(time domain spectroscopy) system to identify the capability for electronic and optical devices in THz region.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.1
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• pp.43-52
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• 2010

Glass was fabricated by using refused coal ore obtained from Dogye coal mine in Samchuk. We additionally used soda ash and calcium carbonate as raw materials to make a glass with the chemical composition of soda-lime glass. And the properties of glass were measured when limestone was used as natural raw materials instead of calcium carbonate as chemical raw materials. Transparent glass was fabricated by melting raw materials at $1550^{\circ}C$ for 1 hr in an electrical furnace. The various kinds of glass samples were fabricated according to the kinds of refused coal ore and glass cullet. The optical properties of transmittance and color chromaticity were measured by UV/VIS/NIR spectrometer and the thermal properties of thermal expansion coefficient and softening point were measured. Transparent glass with the transmittance of over 70% in visible range was fabricated by using normal refused coal ore and black colored glass with the transmittance of 0~35% was fabricated by using shel1 type refused coal ore. Therefore, it is concluded that refused coal ore can be used for raw materials to manufacture secondary glass products such as a glass tile and foamed glass panel for construction material.

• Applied Chemistry for Engineering
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• v.32 no.6
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• pp.690-694
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• 2021

Carbon spheres (CS) were fabricated using glucose as a precursor in the hydrothermal method. Hollow TiO₂ (H-TiO₂) spheres with 200 nm, 500 nm, and 1,200 nm were synthesized by CS/TiO₂ core-shell particles via a sol-gel and calcination method. H-TiO₂ spheres with nano and micron sizes were characterized using FE-SEM, HR-TEM, and X-ray diffraction. The CIE color coordinate, solar reflectance, and heat shield temperatures of H-TiO₂/polyacrylate (PA) composite film were investigated using a UV-Vis-NIR spectrometer and homemade heat insulation temperature measuring device. H-TiO₂/PA composites exhibit excellent thermal insulation since the hollow structure filled with dry air has low thermal conductivity and near infrared light reflecting performance. The thermal insulation increased with increasing the hollow sphere (HS) size on H-TiO₂/PA composites. The PA composite film mixed with H-TiO₂ filled with 1200 nm HS reduced the heat shield temperature by 26 ℃ compared to that of the transparent glass counterpart.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.1
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• pp.1-7
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• 2024

β-Ga₂O₃ is a material with a wide band gap of ~4.8 eV and a high breakdown-voltage of 8 MV/cm, and is attracting much attention in the field of power device applications. In addition, compared to representative WBG semiconductor materials such as SiC, GaN and Diamond, it has the advantage of enabling single crystal growth with high growth rate and low manufacturing cost [1-4]. In this study, we succeeded in growing a 10 mm thick β-Ga₂O₃ single crystal doped with 0.3 mol% SnO₂ through the EFG (Edge-defined Film-fed Growth) method using multi-slit structure. The growth direction and growth plane were set to [010]/(010), respectively, and the growth speed was about 12 mm/h. The grown β-Ga₂O₃ single crystal was cut into various crystal planes (010, 001, 100, ${\bar{2}}01$) and surface processed. The processed samples were compared for characteristics according to crystal plane through analysis such as XRD, UV/VIS/NIR/Spec., Mercury Probe, AFM and Etching. This research is expected to contribute to the development of power semiconductor technology in high-voltage and high-temperature applications, and selecting a substrate with better characteristics will play an important role in improving device performance and reliability.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.4 no.1
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• pp.1-7
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• 2006

The spectroscopic characteristics of Pu (III, IV, V, VI) in the HCl media were investigated by measuring Pu oxidation states using a UV-Vis-NIR spectrophotometer (400-1200 nm) after adjusting Pu oxidation states with oxidation/reduction reagents. Pu in stock solution was reduced to Pu(III) with $NH_2OH$ HCl, and oxidized to Pu(IV) and Pu(VI) with $NaNO_2$ and $HClO_4$, respectively. Also, Pu(V) was adjusted in the Pu(VI) solution with $NH_2OH$ HCl. The major absorption peaks of Pu (IV) and Pu(III) were measured in the 470 m and 600 nm, respectively. The major absorption peaks of Pu (VI) and Pu(V) were measured in the 830 nm and 1135 nm, respectively. There was not found to be significant changes of UV-Vis absorption spectra for Pu(III), Pu(IV) and Pu(VI) with aging time, except that an unstable Pu(V) immediately reduced to Pu(III).