Korean Journal of Metals and Materials (대한금속재료학회지)

The Korean Institute of Metals and Materials (대한금속재료학회)
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Crystallized Nano-thick ZnO Films with Low Temperature ALD Process

저온 원자층 증착으로 형성된 ZnO 박막의 물성과 결정성 연구

  • Yu, Byungkwan (Department of Materials Science and Engineering, University of Seoul) ;
  • Han, Jeungjo (Department of Materials Science and Engineering, University of Seoul) ;
  • Song, Ohsung (Department of Materials Science and Engineering, University of Seoul)
  • 유병관 (서울시립대학교 신소재공학과) ;
  • 한정조 (서울시립대학교 신소재공학과) ;
  • 송오성 (서울시립대학교 신소재공학과)
  • Received : 2010.05.26
  • Published : 2010.12.25
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Abstract

ZnO thin films were deposited on Si(100) substrates at low temperatures ($44^{\circ}C{\sim}210^{\circ}C$) by atomic layer deposition using DEZn (diethyl zinc) and water as precursors. The film thickness was measured by ellipsometry calibrated with cross-sectional TEM. The phase formation, microstructure evolution, UV-absorbance, and chemical composition changes were examined by XRD, SEM, AFM, TEM, UV-VIS-NIR, and AES, respectively. A uniform amorphous ZnO layer was formed even at $44^{\circ}C$ while stable crystallized ZnO films were deposited above $90^{\circ}C$. All the samples showed uniform surface roughness below 3 nm. Fully crystallized ZnO layers with a band-gap of 3.37 eV without carbon impurities can be formed at substrate temperatures of less than $90^{\circ}C$.

Keywords

Acknowledgement

Supported by : 나노소재기술개발사업단

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