• Title/Summary/Keyword: UV-Laser

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Mechanical Property and Crystallization of Glass by Femtosecond Laser Pulses (Femto Second Laser Pulse에 의한 유리의 결정화 및 기계적 특성)

  • Cha, Jae-Min;Moon, Pil-Yong;Kim, Dong-Hyun;Park, Sung-Je;Cho, Sung-Rak;Ryu, Bong-Ki
    • Journal of the Korean Ceramic Society
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    • v.42 no.6 s.277
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    • pp.377-383
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    • 2005
  • Generally, the strength achieved of glass-ceramics is higher as is the fracture toughness, as compared with the original glass. This improvement is due to the microstructure consisting of very small crystals. In this study, Ag-doped $45SiO_2-24CaO-24Na_2O-4P_2O_5$ glasses were irradiated to strengthen by the crystallization using Femto second laser Pulses. Through the UV/VIS spectroscope, XRD, Nano-indenter and SEM etc., heat-treated and irradiation of laser pulses without heat-treated samples were analyzed. Two kinds of samples, heat-treated and laser irradiated without heat-treated samples, showed the peaks in the same wavelength near 360 nm. Especially, samples irradiated by 140 mW laser with XYZ stage having at the rate of 100$\~$l000 $\mu$m/s had the largest absorption peak among them, and heat-treated samples was shown lower absorption range than over 90 mW laser irradiated samples. Moreover, samples irradiated by laser had higher values ($4.4\~4.56{\times}10^{-3}(Pa)$) of elastic modulus which related with strength of glass than values of heat-treated samples and these are 1.2$\~$1 .5 times higher values than them of mother glass.

Fabrication of Metallic Nano-Filter Using UV-Imprinting Process (UV 임프린팅 공정을 이용한 금속막 필터제작)

  • Noh Cheol Yong;Lee Namseok;Lim Jiseok;Kim Seok-min;Kang Shinill
    • Transactions of Materials Processing
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    • v.14 no.5 s.77
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    • pp.473-476
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    • 2005
  • The demand of on-chip total analyzing system with MEMS (micro electro mechanical system) bio/chemical sensor is rapidly increasing. In on-chip total analyzing system, to detect the bio/chemical products with submicron feature size, a filtration system with nano-filter is required. One of the conventional methods to fabricate nano-filter is to use direct patterning or RIE (reactive ion etching). However, those procedures are very costly and are not suitable fur mass production. In this study, we suggested new fabrication method for a nano-filter based on replication process, which is simple and low cost process. After the Si master was fabricated by laser interference lithography and reactive ion etching process, the polymeric mold was replicated by UV-imprint process. Metallic nano-filter was fabricated after removing the polymeric part of metal deposited polymeric mold. Finally, our fabrication method was applied to metallic nano-filter with $1{\mu}m$ pitch size and $0.4{\mu}m$ hole size for bacteria sensor application.

Fabrication of Two-dimensional Photonic Crystal by Roll-to-Roll Nanoreplication (롤투롤 나노 복제 공정을 이용한 이차원 광결정 소자의 제작)

  • Kim, Young-Kyu;Byeon, Euihyeon;Jang, Ho-Young;Kim, Seok-Min
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.12 no.5
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    • pp.16-22
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    • 2013
  • A two-dimensional photonic crystal structure was investigated using a roll-to-roll nanoreplication and physical vapor deposition processes for the inexpensive enhanced fluorescence substrate which is not sensitive to the polarization directions of excitation light source. An 8 inch silicon master having nano dot array with a diameter of 200 nm, a height of 100 nm and a pitch of 400 nm was prepared by KrF laser scanning lithography and reactive ion etching processes. A flexible polymer mold was fabricated by flat type UV replication process and a deposition of 10 nm nickel layer as an anti-adhesion layer. A roll mold was prepared by warping the flexible polymer mold on an aluminum roll base and a roll-to-roll UV replication process was carried out using the roll mold. After the deposition of ~ 100 nm $TiO_2$ layer on the replicated nano dot array, a 2 dimensional photonic crystal structure was realized with a resonance wavelength of 635 nm for both p- and s-polarized light sources.

Fabrication of Diffractive Optical Element for Objective Lens of Small form Factor Data Storage Device (초소형 광정보저장기기용 웨이퍼 스케일 대물렌즈 제작을 위한 회절광학소자 성형기술 개발)

  • Bae H.;Lim J.;Jeong K.;Han J.;Yoo J.;Park N.;Kang S.
    • Transactions of Materials Processing
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    • v.15 no.1 s.82
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    • pp.3-8
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    • 2006
  • The demand fer small and high-capacity optical data storage devices has rapidly increased. The areal density of optical disk is increased by using higher numerical aperture objective lens and shorter wavelength source. A wafer-scale stacked micro objective lens with a numerical aperture of 0.85 and a focal length of 0.467mm for the 405nm blue- violet laser was designed and fabricated. A diffractive optical element (DOE) was used to compensate the spherical aberration of the objective lens. Among the various fabrication methods for micro DOE, the UV-replication process is more suitable fur mass-production. In this study, an 8-stepped DOE pattern as a master was fabricated by photolithography and reactive ion etching process. A flexible mold was fabricated for improving the releasing properties and shape accuracy in UV-replication process. In the replication process, the effects of exposing time and applied pressure on the replication quality were analyzed. Finally, the surface profiles of master, mold and molded pattern were measured by optical scanning profiler. The geometrical deviation between the master and the molded DOE was less than $0.1{\mu}m$. The diffraction efficiency of the molded DOE was measured by DOE efficiency measurement system which consists of laser source, sample holder, aperture and optical power meter, and the measured value was $84.5\%$.

AlInGaN - based multiple quantum well laser diodes for Blu-ray Disc application

  • O. H. Nam;K. H. Ha;J. S. Kwak;Lee, S.N.;Park, K.K.;T. H. Chang;S. H. Chae;Lee, W.S.;Y. J. Sung;Paek H.S.;Chae J.H.;Sakong T.;Kim, Y.;Park, Y.
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.20-20
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    • 2003
  • We developed 30 ㎽-AlInGaN based violet laser diodes. The fabrication procedures of the laser diodes are described as follows. Firstly, GaN layers having very low defect density were grown on sapphire substrates by lateral epitaxial overgrowth method. The typical dislocation density was about 1-3$\times$10$^{6}$ /$\textrm{cm}^2$ at the wing region. Secondly, AlInGaN laser structures were grown on LEO-GaN/sapphire substrates by MOCVD. UV activation method, instead of conventional annealing, was conducted to achieve good p-type conduction. Thirdly, ridge stripe laser structures were fabricated. The cavity mirrors were formed by cleaving method. Three pairs of SiO$_2$ and TiO$_2$ layers were deposited on the rear facet for mirror coating. Lastly, laser diode chips were mounted on AlN submount wafers by epi-down bonding method. The lifetime of the laser diodes was over 10,000 hrs at room temperature under automatic power controlled condition. We expect the performance of the LDs to be improved by the optimization of the growth and fabrication process. The detailed characteristics and important issues of the laser diodes will be discussed at the conference.

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Properties of Indium Zinc Oxide Thin Films Prepared by Pulsed Laser Deposition (펄스레이저증착법으로 증착한 Indium Zinc Oxide 박막의 물성)

  • Choi, Hak-Soon;Jeong, Il-Kyo;Shin, Mun-Soo;Kim, Heon-Oh;Kim, Yong-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.7
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    • pp.537-542
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    • 2011
  • Recently, n-InZnO/p-CuO oxide diode has attracted great attention due to possible application for selector device of 3-dimensional cross-point resistive memory structures. To investigate the detailed properties of InZnO (IZO), we have deposited IZO films on the fused quartz substrate using PLD (pulsed laser deposition) method at oxygen pressure of 1~100 mTorr and substrate temperature of RT$\sim600^{\circ}C$. The influence of oxygen pressure and substrate temperature on structural, optical and electrical of IZO films is analyzed using XRD (x-ray diffraction), SEM (scanning electron microscopy), UV-Vis spectrophotometry, spectroscopic ellipsometry (SE) and hall measurements. The XRD results shows that the deposited thin films are polycrystalline over $300^{\circ}C$ of substrate temperature independent of oxygen pressure. The resistivity of films was increased as oxygen pressure and substrate temperature decrease. The thickness and optical constants of the deposited films measured with UV-Vis spectrophotometer were also compared with those of broken SEM and SE results.

Visible-light photo-reduction of reduced graphene oxide by lanthanoid ion

  • Kim, Jinok;Yoo, Gwangwe;Park, Jin-Hong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.290.1-290.1
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    • 2016
  • Grapehen, a single atomic layer of graphite, has been in the spotlight and researched in vaious fields, because its fine mechanical, electrical properties, flexibility and transparence. Synthesis methods for large-area graphene such as chemical vaper deposition (CVD) and mechanical, chemical exfoliation have been reported. In particular, chemical exfoliation method receive attention due to low cost process. Chemical exfoliation method require reduction of graphene oxide in the process of exfoliation such as chemical reduction by strong reductant, thermal reduction on high temperature, and optical reduction via ultraviolet light exposure. Among these reduction methods, optical reduction is free from damage by strong reductant and high temperature. However, optical reduction is economically infeasible because the high cost of short-wavelength ultraviolet light sorce. In this paper, we make graphene-oxide and lanthanoid ion mixture aqueous solution which has highly optical absorbency in selective wevelength region. Sequentially, we synthesize reduced graphene oxide (RGO) using the solution and visible laser beam. Concretely, graphene oxide is made by modified hummer's method and mix with 1 ml each ultraviolet ray absorbent Gd3+ ion, Green laser absorbent Tb3+ ion, Red laser absorbent Eu3+ ion. After that, we revivify graphene oxide by laser exposure of 300 ~ 800 nm layser 1mW/cm2 +. We demonstrate reproducibility and repeatability of RGO through FT-IR, UV-VIS, Low temperature PL, SEM, XPS and electrical measurement.

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Polycrystalline silicon thin film fabricated on plastic substrates by excimer laser annealing (엑시머 레이저 어닐링을 이용하여 플라스틱 기판에 형성한 다결정 실리콘 박막의 특성)

  • 조세현;이인규;김영훈;문대규;한정인
    • Journal of the Korean Vacuum Society
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    • v.13 no.1
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    • pp.29-33
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    • 2004
  • In this paper, we investigated the ultra-low temperature(<$150^{\circ}C$) polycrystalline silicon film on plastic substrate application using RF-magnetron sputtering and excimer laser annealing. Amorphous silicon films were deposited using Ar/He mixture gas at $120^{\circ}C$ and in-film argon concentration was less than 2%, which was measured to Rutherford Backscattering Spectrometry. At energy density 320mJ/$\textrm{cm}^2$, RMS roughness was 267$\AA$ and UV crystallinity was 62%. The grain size varies from 50nm to 100nm after excimer laser irradiation.

Development of micro-stereolithography system for the fabrication of three-dimensional micro-structures (3 차원 형상의 미소제품 제작을 위한 마이크로 광 조형시스템의 개발)

  • 이인환;조윤형;조동우;이응숙
    • Journal of the Korean Society for Precision Engineering
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    • v.21 no.2
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    • pp.186-194
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    • 2004
  • Micro-stereolithography is a newly proposed technology as a means that can fabricate a 3D micro-structure of free form. It makes a 3D micro-structure by dividing the shape into many slices of relevant thickness along horizontal surfaces, hardening each layer of slice with a focused laser beam, and stacking them up to a desired shape. In this technology, differently from the conventional stereolithography, scale effect is dominant. To realize micro-stereolithography technology, we developed the micro-stereolithography apparatus which is composed of an Ar+ laser, x-y-z stages. controllers. optical devices and scan path generation software. Related processes were developed, too. Using the system, a number of micro-structures were successfully fabricated. Some of these samples are shown for prove this system. Laser scan path generation algorithm and software considering photopolymer solidification phenomena as well as given 3D model were developed. Sample fabrication of developed software shows relatively high dimensional accuracy compared to the uncompensated result.

Growth of MnS Thin Film on c-Sapphire by Pulsed Laser Deposition (PLD 법에 의한 c-사파이어 기판위의 MnS 박막성장)

  • Song, Jeong-Hwan
    • Korean Journal of Materials Research
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    • v.17 no.9
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    • pp.475-479
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    • 2007
  • Pulsed laser deposition was utilized to grow MnS thin films on c-sapphire substrate using a KrF excimer laser at growth temperatures that ranged from room temperature to $700^{\circ}C$. The results of X-ray diffraction (XRD) and UV-visible spectroscopy were employed to investigate the structural and optical properties of the MnS films. While the growth rate decreased as $T_s$ increased, the overall quality of the film improved. The highest quality MnS film was obtained at $700^{\circ}C$. Variations in the $T_s$ resulted in the MnS films exhibiting different growth mechanisms. The oriented (200) rocksalt MnS film was grown at room temperature. In the case of higher $T_s,\;200{\sim}500^{\circ}C$, the films consisted of mixed phases of rocksalt and wurtzite. The main structure of the films was altered to (111) rocksalt when the temperature was increased to in excess of $600^{\circ}C$. This behavior may very well be the result of elements such as surface energy and atomic arrangement during the growth process. The optical band gap of the obtained ${\alpha}-MnS$ film was estimated to be 3.32 eV.