Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)
- 2003.11a
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- Pages.20-20
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- 2003
AlInGaN - based multiple quantum well laser diodes for Blu-ray Disc application
- O. H. Nam (Photonics Lab, Samsung Advanced Institute of Technology) ;
- K. H. Ha (Photonics Lab, Samsung Advanced Institute of Technology) ;
- J. S. Kwak (Photonics Lab, Samsung Advanced Institute of Technology) ;
- Lee, S.N. (Photonics Lab, Samsung Advanced Institute of Technology) ;
- Park, K.K. (Photonics Lab, Samsung Advanced Institute of Technology) ;
- T. H. Chang (Photonics Lab, Samsung Advanced Institute of Technology) ;
- S. H. Chae (Photonics Lab, Samsung Advanced Institute of Technology) ;
- Lee, W.S. (Photonics Lab, Samsung Advanced Institute of Technology) ;
- Y. J. Sung (Photonics Lab, Samsung Advanced Institute of Technology) ;
- Paek H.S. (Photonics Lab, Samsung Advanced Institute of Technology) ;
- Chae J.H. (Photonics Lab, Samsung Advanced Institute of Technology) ;
- Sakong T. (Photonics Lab, Samsung Advanced Institute of Technology) ;
- Kim, Y. (Photonics Lab, Samsung Advanced Institute of Technology) ;
- Park, Y. (Photonics Lab, Samsung Advanced Institute of Technology)
- Published : 2003.11.01
Abstract
We developed 30 ㎽-AlInGaN based violet laser diodes. The fabrication procedures of the laser diodes are described as follows. Firstly, GaN layers having very low defect density were grown on sapphire substrates by lateral epitaxial overgrowth method. The typical dislocation density was about 1-3
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