• Title/Summary/Keyword: UV sensor

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Characterization of pH Dependent Properties of mCherry Mutant, I202T (형광 단백질 mCherry-I202T의 pH 감응성 분석)

  • Lee, Sangmin;Chung, Minsub
    • Applied Chemistry for Engineering
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    • v.32 no.1
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    • pp.10-14
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    • 2021
  • mCherry is one of the well-understood red fluorescent proteins which has a similar tertiary structure as GFPs, but pH resistant due to the lack of hydrogen bond network. Whereas mCherry-I202T showed far-red fluorescence and also pH sensitive property because of the additional hydrogen bond formed by substituting Ile of 202 amino acid sequence on mCherry with Thr. In order to verify the pH sensitive characteristic of mCherry-I202T owing to the extension of hydrogen bond, UV-vis spectrum was measured over the range of acidic to basic pH. We also demonstrate further possibilities of applying mCherry-I202T as a pH sensor.

Radiation Effects on Fiber Bragg Grating Sensors Written in UV KrF Laser Process Condition (UV KrF 레이저 공정조건에 따른 FBG 센서의 방사선 영향)

  • Kim, Jong-Yeol;Lee, Nam-Ho;Jung, Hyun-Kyu
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.20 no.1
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    • pp.161-166
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    • 2016
  • We studied the effect of $Co^{60}$ gamma-radiation on the FBGs by a variation of grating the fabrication parameters. The FBGs were fabricated in a different UV KrF laser intensity using the same boron co-doped photo-sensitive fiber and exposed to gamma-radiation up to a dose of 33.8 kGy. According to the experimental data and analysis results, We confirmed that the laser intensity for grating inscription has a highly effect on the radiation sensitivity of the FBGs and the radiation-induced Bragg wavelength shift by the change of laser process condition showed a difference more than about 30 %.

VERTICAL OZONE DENSITY PROFILING BY UV RADIOMETER ONBOARD KSR-III

  • Hwang Seung-Hyun;Kim Jhoon;Lee Soo-Jin;Kim Kwang-Soo;Ji Ki-Man;Shin Myung-Ho;Chung Eui-Seung
    • Bulletin of the Korean Space Science Society
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    • 2004.10b
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    • pp.372-375
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    • 2004
  • The UV radiometer payload was launched successfully from the west coastal area of Korea Peninsula aboard KSR-III on 28, Nov 2002. KSR-III was the Korean third generation sounding rocket and was developed as intermediate step to larger space launch vehicle with liquid propulsion engine system. UV radiometer onboard KSR-III consists of UV and visible band optical phototubes to measure the direct solar attenuation during rocket ascending phase. For UV detection, 4 channel of sensors were installed in electronics payload section and each channel has 255, 290, 310nm center wavelengths, respectively. 450nm channel was used as reference for correction of the rocket attitude during the flight. Transmission characteristics of all channels were calibrated precisely prior to the flight test at the Optical Lab. in KARI (Korea Aerospace Research Institute). During a total of 231s flight time, the onboard data telemetered to the ground station in real time. The ozone column density was calculated by this telemetry raw data. From the calculated column density, the vertical ozone profile over Korea Peninsula was obtained with sensor calibration data. Our results had reasonable agreements compared with various observations such as ground Umkhr measurement at Yonsei site, ozonesonde at Pohang site, and satellite measurements of HALOE and POAM. The sensitivity analysis of retrieval algorithm for parameters was performed and it was provided that significant error sources of the retrieval algorithm.

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A Study on photoisomerization of cellulose acetate containing disperse red 1 (Disperse red 1을 함유하고 있는 셀룰로오스 아세테이트의 광이성화에 관한 연구)

  • Lee, Soo;Park, Keun-Ho;Jung, Dong-Soon
    • Journal of the Korean Applied Science and Technology
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    • v.16 no.4
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    • pp.273-279
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    • 1999
  • In order to study a reversible photoisomerization of disperse red l(DR 1) attached on natural polymers, cellulose acetate containing DR l(DR 1/CA adduct) was prepared, and the changes of UV/VIS spectra of its solution(benzene, DMAc). thick film, and LB film were investigated by alternate irradiation with two different wave length lights. DR 1/CA adduct was prepared through tosylation of partially hydrolyzed cellulose acetate followed by reaction with DR 1 at $100^{\circ}C$ in pyridine. From the UV/VIS spectra of DR 1/CA adduct dissolved in DMAc solvent including phosphoglyceride before and after irradiation at 360nm and 45Onm, we found out the changes of UV/VIS spectra were reversible. In addition, the change of UV/VIS spectra of this adduct solution was strongly depended on the sorts of solvents and temperature. As the temperature was increased, UV/VIS spectra of this adduct solution in DMF showed blue shift. These results provided this solution could be applied to a temperature sensor. In the thick film case, we also obtained similar results with solution case. LB monolayer and trilayer from DR 1/CA adduct was obtained by scattering the solution including phosphoglyceride on water surface at the surface pressure of 8mN/m. After irradiation on that LB monolayer and trilayer, the reversible photoisomerization was also detected. From these results we concluded DR 1/CA adduct was suitable for the application to data storage and optical switch, etc.

Study of the Operational Characteristics of Photodetectors Using Gallium Oxide (산화 갈륨을 활용한 광검출 소자의 동작 특성 분석 연구)

  • Hak Jun Ban;Seung Won Lee;Seul Ki Hong
    • Journal of the Microelectronics and Packaging Society
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    • v.31 no.3
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    • pp.58-61
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    • 2024
  • In a semiconductor system, the operation of sensors plays a crucial role in recognizing information, serving as the starting point for processing external information. This study evaluates the applicability of semiconductor systems by analyzing the operational characteristics of ultraviolet (UV) detection devices using gallium oxide. Gallium oxide exhibits a property where its resistance changes in response to UV light, making it feasible to implement detection devices utilizing this material. However, to determine its applicability in semiconductor systems, detailed studies on its operational characteristics are necessary. In this study, by varying the size of the electrodes, we assessed whether the formation of current paths in gallium oxide in response to UV light is localized. Additionally, we confirmed the response speed to UV light, comparable to commercially available products, through electrical measurements. Through this, we verified the commercial applicability of gallium oxide and its potential integration into various semiconductor systems.

Interference of Sulphur Dioxide on Balloon-borne Electrochemical Concentration Cell Ozone Sensors over the Mexico City Metropolitan Area

  • Kanda, Isao;Basaldud, Roberto;Horikoshi, Nobuji;Okazaki, Yukiyo;Benitez-Garcia, Sandy-Edith;Ortinez, Abraham;Benitez, Victor Ramos;Cardenas, Beatriz;Wakamatsu, Shinji
    • Asian Journal of Atmospheric Environment
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    • v.8 no.3
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    • pp.162-174
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    • 2014
  • An abnormal decrease in ozonesonde sensor signal occurred during air-pollution study campaigns in November 2011 and March 2012 in Mexico City Metropolitan Area (MCMA). Sharp drops in sensor signal around 5 km above sea level and above were observed in November 2011, and a reduction of signal over a broad range of altitude was observed in the convective boundary layer in March 2012. Circumstantial evidence indicated that $SO_2$ gas interfered with the electrochemical concentration cell (ECC) ozone sensors in the ozonesonde and that this interference was the cause of the reduced sensor signal output. The sharp drops in November 2011 were attributed to the $SO_2$ plume from Popocat$\acute{e}$petl volcano southeast of MCMA. Experiments on the response of the ECC sensor to representative atmospheric trace gases showed that only $SO_2$ could cause the observed abrupt drops in sensor signal. The vertical profile of the plume reproduced by a Lagrangian particle diffusion simulation supported this finding. A near-ground reduction in the sensor signal in March 2012 was attributed to an $SO_2$ plume from the Tula industrial complex north-west of MCMA. Before and at the time of ozonesonde launch, intermittent high $SO_2$ concentrations were recorded at ground-level monitoring stations north of MCMA. The difference between the $O_3$ concentration measured by the ozonesonde and that recorded by a UV-based $O_3$ monitor was consistent with the $SO_2$ concentration recorded by a UV-based monitor on the ground. The vertical profiles of the plumes estimated by Lagrangian particle diffusion simulation agreed fairly well with the observed profile. Statistical analysis of the wind field in MCMA revealed that the effect Popocat$\acute{e}$petl was most likely to have occurred from June to October, whereas the effect of the industries north of MCMA, including the Tula complex, was predicted to occur throughout the year.

A Schottky Type Ultraviolet Photo-detector using RUO$_2$/GaN Contact (RUO$_2$/GaN 쇼트키 다이오드 형 자외선 수광소자)

  • Sin, Sang-Hun;Jeong, Byeong-Gwon;Bae, Seong-Beom;Lee, Yong-Hyeon;Lee, Jeong-Hui;Ham, Seong-Ho
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.10
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    • pp.671-677
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    • 2001
  • A RuO$_2$ Schottky photo-detector was designed and fabricated with GaN layers on the sapphire substrate. For good absorption of UV light, an epitaxial structure with undoped GaN(0.5 ${\mu}{\textrm}{m}$)/n ̄-GaN(0.1${\mu}{\textrm}{m}$)/n+-GaN(1.5${\mu}{\textrm}{m}$) was grown by MOCVD. The structure had the carrier concentrations of 3.8$\times$10$^{18}$ cm ̄$^3$, the mobility of 283$\textrm{cm}^2$/V.s. After ECR etching process for mesa structure with the diameter of about 500${\mu}{\textrm}{m}$, Al ohmic contact was formed on GaN layer. After proper passivation between the contacts with Si$_3$/N$_4$, was formed on undoped GaN layer. The fabricated Schottky diode had a specific contact resistance of 1.15$\times$10$^{-5}$$\Omega$.$\textrm{cm}^2$]. It has a low leakage current of 305 pA at -5 V, which was attributed by stable characteristics of RuO$_2$ Schottky contact. In optical measurement, it showed the high UV to visible extinction ratio of 10$^{5}$ and very high responsivity of 0.23 A/W at the wavelength of 365nm.

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Fabrication of the Imaging Lens for Mobile Camera using Embossing Method (엠보싱 공법에 의한 카메라 모듈용 광학렌즈 성형기법에 대한 연구)

  • Lee, C.H.;Jin, Y.S.;Noh, J.E.;Kim, S.H.;Jang, I.C.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2007.05a
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    • pp.79-83
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    • 2007
  • We have developed a compact and cost-effective camera module on the basis of wafer-scale replication technology. A multiple-layered structure of several aspheric lenses in a mobile camera module is first assembled by bonding multiple glass-wafers on which 2-dimensional replica arrays of identical aspheric lenses are UV-embossed, followed by dicing the stacked wafers and packaging them with image sensor chips. We have demonstrated a VGA camera module fabricated by the wafer-scale replication processing with various UV-curable polymers having refractive indices between 1.4 and 1.6, and with three different glass-wafers of which both surfaces are embossed as aspheric lenses having 200 um sag-height and aspheric-coefficients of lens polynomials up to tenth-order. We have found that precise compensation in material shrinkage of the polymer materials is one of the most technical challenges, in order to achieve a higher resolution in wafer-scaled lenses for mobile camera modules.

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Formation of porous 3C-SiC thin film by anodization with UV-LED (양극산화법과 UV-LED를 이용한 다공성 3C-SiC 박막 형성)

  • Kim, Kang-San;Chung, Gwiy-Sang
    • Journal of Sensor Science and Technology
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    • v.18 no.4
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    • pp.307-310
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    • 2009
  • This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS(Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 $\sim$ 90 nm was achieved at 7.1 mA/cm$^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 cm$^{-1}$. PL shows the band gap enegry of thin film(2.5 eV) and porous 3C-SiC(2.7 eV).

UV emission of ZnO:Er films prepared by ultrasonic spray pyrolysis (초음파분무법으로 제조한 ZnO:Er막의 UV 발광 특성)

  • Choi, Mu-Hee;Ma, Tae-Young
    • Journal of Sensor Science and Technology
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    • v.16 no.4
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    • pp.307-312
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    • 2007
  • The films of Er-doped ZnO (ZnO:Er) were prepared onto MgO wafers by ultrasonic spray pyrolysis at $550^{\circ}C$. The concentration of Er in the deposition source varied from 0.5 wt% to 3.0 wt%. The crystallographic properties and surface morphologies of the films were investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The properties of photoluminescence (PL) for the films were investigated by dependence of PL spectra on the Er concentration in the films. The films were grown as polycrystalline with a dominant direction of [002]. The grain size of the films were reduced by Er-doping. Er-doping enhanced the ultraviolet emission of ZnO:Er films. The ZnO:Er films prepared with the deposition source of 2.0 wt% Er showed the strongest ultraviolet light emission peak among the films in this study.