• Fibers and Polymers
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• v.1 no.1
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• pp.37-44
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• 2000

A finite element method is employed fer a flow analysis of the melt spinning process of a non-circular fiber, a PET(polyethylene terephthalate) filament. The flow field is divided into two regions of die channel and spin-line. A two dimensional analysis is used for the flow within the die channel and a three dimensional analysis fur the flow along the spin-line. The Newtonian fluid is assumed for the PET melt and material properties are considered to be constant except for the viscosity. Effects of gravitation, air drag force, and surface tension are neglected. Although the spin-line length is 4.5 m only five millimeters from the spinneret are evaluated as the domain of the analysis. Isothermal and non-isothermal cases are studied fer the flow within the die channel. The relationship between the mass flow rate and the pressure gradient is presented for the two cases. Three dimensional flow along the spin-line is obtained by assuming isothermal conditions. It is shown that changes in velocity and cross-sectional shape occur mostly in the region of 1mm from the die exit.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.23 no.2
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• pp.103-110
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• 2011

A two-dimensional immiscible droplet deformation phenomena on moving wall in a channel has been investigated by using lattice Boltzmann method involving two-phase model. The dependence of the deformation of the droplet with different sizes on the contact angle and the velocity of bottom wall has studied. When the bottom wall starts to move, the deformation of the droplet occurs. For the largest bottom wall velocity, eventually, the deformation of the droplet is classified into the three patterns according to the contact angle.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1301-1307
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• 2004

Reduced pressure chemical vapor deposition(RPCYD) technology has been investigated for the growth of SiGe epitaxial films with two dimensional in-situ doped boron impurities. The two dimensional $\delta$-doped impurities can supply high mobility carriers into the channel of SiGe heterostructure MOSFETs(HMOS). Process parameters including substrate temperature, flow rate of dopant gas, and structure of epitaxial layers presented significant influence on the shape of two dimensional dopant distribution. Weak bonds of germanium hydrides could promote high incorporation efficiency of boron atoms on film surface. Meanwhile the negligible diffusion coefficient in SiGe prohibits the dispersion of boron atoms: that is, very sharp, well defined two-dimensional doping could be obtained within a few atomic layers. Peak concentration and full-width-at-half-maximum of boron profiles in SiGe could be achieved in the range of 10$^{18}$ -10$^{20}$ cm$^{-3}$ and below 5 nm, respectively. These experimental results suggest that the present method is particularly suitable for HMOS devices requiring a high-precision channel for superior performance in terms of operation speed and noise levels to the present conventional CMOS technology.

• Proceedings of the KSME Conference
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• 2001.11b
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• pp.545-550
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• 2001

A two-dimensional laminar flow through a channel, on which a couple of symmetric vertical fins are attached, is investigated. The stokes flow for this channel flow is investigated analytically and laminar flow numerically. For analytic solution, the method of eigen function expansion and collocation method are employed. For numerical solution, finite difference method(FDM) is used to obtain vorticity and stream function. From the results, streamline patterns are shown and the pressure drop due to the attached fins is calculated, which depends on the length of fins and Reynolds number. While $Re, streamline pattern is symmetric, a pair of additional asymmetric solutions appear for $Re>Re_c$, where the critical Reynolds number $Re_c$ depends on the length of the fin.

• Water Engineering Research
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• v.4 no.1
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• pp.45-58
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• 2003

Two-dimensional depth-averaged advection-dispersion equation was simulated using FEM. In the straight rectangular channel, the advection-dispersion processes are simulated so that these results can be compared with analyti-cal solutions for the transverse line injection and the point injection. In the straight domain the standard Galerkin method with the linear basis function is found to be inadequate to the advection-dispersion analysis compared to the upwind finite element scheme. The experimental data in the S-curved channel were compared with the result by the numerical model using SUPG(Streamline upwind Petrov-Galerkin) method.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.2
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• pp.111-120
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• 2011

A two-dimensional analytical model for deriving the threshold voltage of a short channel fully depleted (FD) cylindrical/surrounding gate MOSFET (CGT/SGT) is suggested. By taking into account the lateral variation of the surface potential, introducing the natural length expression, and using the Bessel functions of the first and the second kinds of order zero, we can derive potentials in the gate oxide layer and the silicon core fully two-dimensionally. Making use of these potentials, the minimum surface potential can be obtained to derive the threshold voltage as a closed-form expression in terms of various device parameters and applied voltages. Obtained results can be used to explain the drain-induced threshold voltage roll-off of a CGT/SGT in a unified manner.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.14 no.2
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• pp.171-181
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• 2002

Among various numerical methods of wave transformations including wave breaking by structure, models using VOF(Volume Of Fluid) method to trace free surface are getting into the spotlight recently. In order to analyze wave transformations and velocity of the wave fields due to the permeable submerged breakwater(PSB), This study applied VOF method to the two-dimensional wave channel installed line-source to generate waves and added dissipation zone to offer a non-reflective boundary. Hydraulic experiments was performed to obtain the application of two-dimensional numerical wave channel. The results of numerical experiments using the two-dimensional wave channel agree well with the experimental data. It was shown that vortices are formed behind the PSB, and in case of the 2-rowed PSB they also are occurred in between PSBs, strongly non-linear waves are developed on the crown of the PSB, and the direction of velocities in porous media is determined by the shape of free surface.

• Journal of computational fluids engineering
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• v.17 no.1
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• pp.1-7
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• 2012

This paper deals with a parametric study on inclined elliptical dimples to enhance heat transfer in a channel. Three-dimensional Reynolds-averaged Naiver-Stokes equations are solved to estimate flow and heat transfer in dimpled channel. As turbulence closure, the low-Re shear stress transport model is employed. Two non-dimensional geometric variables, dimple ellipse diameter ratio and angle of main diameter to flow direction are selected for the parametric study. The inclined elliptical dimples show higher heat-transfer performance but with higher pressure drop compared to the circular dimples. And there is an optimum inclination angle that gives the maximum heat transfer.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.5
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• pp.1196-1202
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• 2013

This paper have analyzed the change of breakdown voltage for channel doping concentration and device parameters of double gate(DG) MOSFET using two dimensional potential model. The low breakdown voltage becomes the obstacle of power device operation, and breakdown voltage decreases seriously by the short channel effects derived from scaled down device in the case of DGMOSFET. The two dimensional analytical potential distribution derived from Poisson's equation have been used to analyze the breakdown voltage for device parameters such as channel length, channel thickness, gate oxide thickness and channel doping concentration. Resultly, we could observe the breakdown voltage has greatly influenced on device dimensional parameters as well as channel doping concentration, especially the shape of Gaussian function used as channel doping concentration.

• Journal of Ocean Engineering and Technology
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• v.27 no.4
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• pp.68-75
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• 2013

This paper investigates the characteristics of waves generated by a flap-type wave maker in a two-dimensional wave channel. Measurements are carried out for various water depths, wave heights, periods, and lengths capacitance-type wave height gages. The experimental results are shown to satisfy the dispersion relation of the linear wave theory. For waves with a small height and long period, the wave profiles agree well with those of the linear wave theory. However, as the wave height and period become higher and shorter, respectively, it is shown that the wave profiles measured in the present experiments are different from the linear wave profiles, and the measured wave heights are smaller than the target wave heights, which may be due to the non-linearity of the waves. As the wave progresses toward the channel end, the wave height gradually decreases. This reduction in the wave height along the wave channel is explained by the wave energy dissipation due to the friction of the side walls of the channel. The performance of the wave absorber in the channel is found to be acceptable from the results of the wave reflection tests.