• Title/Summary/Keyword: Two-Dimensional Channel

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Low-Complexity Massive MIMO Detectors Based on Richardson Method

  • Kang, Byunggi;Yoon, Ji-Hwan;Park, Jongsun
    • ETRI Journal
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    • v.39 no.3
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    • pp.326-335
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    • 2017
  • In the uplink transmission of massive (or large-scale) multi-input multi-output (MIMO) systems, large dimensional signal detection and its hardware design are challenging issues owing to the high computational complexity. In this paper, we propose low-complexity hardware architectures of Richardson iterative method-based massive MIMO detectors. We present two types of massive MIMO detectors, directly mapped (type1) and reformulated (type2) Richardson iterative methods. In the proposed Richardson method (type2), the matrix-by-matrix multiplications are reformulated to matrix-vector multiplications, thus reducing the computational complexity from $O(U^2)$ to O(U). Both massive MIMO detectors are implemented using a 65 nm CMOS process and compared in terms of detection performance under different channel conditions (high-mobility and flat fading channels). The hardware implementation results confirm that the proposed type1 Richardson method-based detector demonstrates up to 50% power savings over the proposed type2 detector under a flat fading channel. The type2 detector indicates a 37% power savings compared to the type1 under a high-mobility channel.

MIGRATION OF ELASTIC CAPSULE IN A CHANNEL FLOW (채널 유동 내 유연한 캡슐 움직임에 대한 수치해석)

  • Shin, S.J.;Sung, H.J.
    • 한국전산유체공학회:학술대회논문집
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    • 2011.05a
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    • pp.504-507
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    • 2011
  • The inertial migration of a two-dimensional elastic capsule in a channel flow was studied over the Reynolds number range $1{\leq}Re{\leq}100$. The lateral migration velocity, slip velocity, and the deformation and inclination angle of the capsule were investigated by varying the lateral position, Reynolds number, capsule-to-channel size ratio(${\lambda}$), membrane stretching coefficient(${\Phi}$), and membrane bending coefficient(${\gamma}$). During the initial transient motion, the lateral migration velocity increased with increasing Re and ${\lambda}$ but decreased with increases in ${\Phi}$, ${\gamma}$ and the lateral distance from the wall. The initial behavior of the capsule was influenced by variation in the initial lateral position ($y_0$), but the equilibrium position of the capsule was not affected by such variation. The balance between the wall effect and the shear gradient effect determined the equilibrium position. As Re increased, the equilibrium position initially shifted closer to the wall and then moved towards the channel center. A peak in the equilibrium position was observed near Re=30 for ${\gamma}=0.1$, and the peak shifted to higher Re as ${\gamma}$ increased. Depending on the lateral migration velocity, the equilibrium position moved toward the centerline for larger ${\gamma}$ but moved toward the wall for larger ${\Phi}$ and ${\gamma}$.

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A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted Short-Channel Ion-Implanted Silicon MESFET's

  • Jit, S.;Morarka, Saurabh;Mishra, Saurabh
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.3
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    • pp.173-181
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    • 2005
  • A new two dimensional (2-D) model for the potential distribution of fully depleted short-channel ion-implanted silicon MESFET's has been presented in this paper. The solution of the 2-D Poisson's equation has been considered as the superposition of the solutions of 1-D Poisson's equation in the lateral direction and the 2-D homogeneous Laplace equation with suitable boundary conditions. The minimum bottom potential at the interface of the depletion region due to the metal-semiconductor junction at the Schottky gate and depletion region due to the substrate-channel junction has been used to investigate the drain-induced barrier lowering (DIBL) and its effects on the threshold voltage of the device. Numerical results have been presented for the potential distribution and threshold voltage for different parameters such as the channel length, drain-source voltage, and implanted-dose and silicon film thickness.

A simple analytical model for deriving the threshold voltage of a SOI type symmetric DG-MOSFET (SOI형 대칭 DG MOSFET의 문턱전압 도출에 대한 간편한 해석적 모델)

  • Lee, Jung-Ho;Suh, Chung-Ha
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.7 s.361
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    • pp.16-23
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    • 2007
  • For a fully depleted SOI type symmetric double gate MOSFET, a simple expression for the threshold voltage has been derived in a closed-form To solve analytically the 2D Poisson's equation in a silicon body, the two-dimensional potential distribution is assumed approximately as a polynomial of fourth-order of x, vertical coordinate perpendicular to the silicon channel. From the derived expression for the surface potential, the threshold voltage can be obtained as a simple closed-form. Simulation result shows that the threshold voltage is exponentially dependent on channel length for the range of channel length up to $0.01\;[{\mu}m]$.

Anti-Spoofing Method Using Double Peak Detection in the Two-Dimensional C/A Code Search Space (이차원 C/A 코드 검색 공간에서의 이중피크 검출을 이용한 기만신호 대응 기법)

  • Kwon, Keum-Cheol;Yang, Cheol-Kwan;Shim, Duk-Sun
    • Journal of Advanced Navigation Technology
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    • v.17 no.2
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    • pp.157-164
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    • 2013
  • In the presence of spoofing signal the GPS signal having the same PRN with the spoofer is hard to be acquired since the power of spoofing signal is usually stronger than that of GPS signal. If a spoofing signal exists for the same PRN, there are double peaks in two-dimensional space of frequency and code phase in acquisition stage. Using double peak information it is possible to detect spoofing signal and acquire GPS information through separate channel tracking. In this paper we introduce an anti-spoofing method using double peak detection, and thus can acquire GPS navigation data after two-channel tracking for the same PRN as the spoofing signal.

Numerical Analysis on Performance Characteristics of PEMFC with Parallel and Interdigitated Flow Channel (평행류와 Interdigitated 유로를 가진 교분자 전해질 연료전지(PEMFC)의 성능특성에 대한 수치해석)

  • Lee, Pil-Hyong;Cho, Son-Ah;Choi, Seong-Hun;Hwang, Sang-Soon
    • Journal of the Korean Electrochemical Society
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    • v.9 no.4
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    • pp.170-177
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    • 2006
  • Optimum design of flow channel in the separation plate of Proton Exchange Membrane Fuel Cell is very prerequisite to reduce concentration over potential at high current region and remove the water generated in cathode effectively. In this paper, fully 3 dimensional computational model which solves anode and cathode flow fields simultaneously is developed in order to compare the performance of fuel cell with parallel and interdigitated flow channels. Oxygen and water concentration and pressure drop are calculated and i-V performance characteristics are compared between flows with two flow channels. Results show that performance of fuel cell with interdigitated flow channel is hi민or than that with parallel flow channel at high current region because hydrogen and oxygen in interdigitated flow channel are transported to catalyst layer effectively due to strong convective transport through gas diffusion layer but pressure drop is larger than that in parallel flow channel. Therefore Trade-off between power gain and pressure loss should be considered in design of fuel cell with interdigitated flow channel.

Performance of Dynamic Spectrum Access Scheme Using Embedded Markov Chain (임베디드 마르코프 체인을 이용한 동적 스펙트럼 접속 방식의 성능 분석)

  • Lee, Yutae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.9
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    • pp.2036-2040
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    • 2013
  • In this paper, we consider two dynamic spectrum access schemes in cognitive network with two independent and identically distributed channels. Under the first scheme, secondary users switch channel only after transmission failure. On the other hand, under the second one, they switch channel only after successful transmission. We develop a mathematical model to investigate the performance of the second one and analyze the model using 3-dimensional embedded Markov chain. Numerical results and simulations are presented to compare between the two schemes.

A study on the two-dimensional of modeling for the submicon MOSFET (Submicron MOSFET의 2차원적 모델링에 관한 연구)

  • 홍순석;이정일;여정현
    • Electrical & Electronic Materials
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    • v.6 no.1
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    • pp.40-49
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    • 1993
  • 본 논문은 fitting 파라미커를 배제하고 2차원적 Poisson 방식을 도출해서 Submicron MOSFET의 model식을 완전히 해석적으로 성립시켰다. 이로 인해 포화영역, 문턱전압, 강반전에 대한 것이 동시에 표현되는 정확한 드레인 전류가 유도되었다. 더욱이 이 model은 short-channel과 body효과, DIBL효과, 그리고 carrier운동에 대한 것도 설명할 수 있으며 온도와 n$^{+}$접합, 산화층에 관련되는 문턱전압도 표현할 수 있었다.

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Direct Numerical Simulation of 3-Dimensional Axial Turbulent Boundary Layers with Spanwise Curvature

  • Shin, Dong-Shin
    • Journal of Mechanical Science and Technology
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    • v.14 no.4
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    • pp.441-447
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    • 2000
  • Direct numerical simulation has been used to study turbulent boundary layers with convex curvature. A direct numerical simulation program has been developed to solve incompressible Navier-Stokes equations in generalized coordinates with the finite volume method. We considered two boundary layer thicknesses. When the curvature effect is small, mean velocity statistics show little difference with those of a plane channel flow. Turbulent intensity decreases as curvature increases. Contours suggest that streamwise vorticities are strong where large pressure fluctuations exist.

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