• Title/Summary/Keyword: Two Difference Voltage

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A Cost Effective DC Link Variable Inverter Using 2-Switch Buck-Boost Converter (2-스위치 Buck-Boost 컨버터를 이용한 DC 링크 전압 가변형 인버터 설계)

  • Kang, Hyun-Soo;Kim, Jun-Hyung;Lee, Byoung-Kuk;Hur, Jin
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.5
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    • pp.950-959
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    • 2009
  • In this paper, a dc link voltage variable inverter system is proposed, which consists of a two-switch buck-boost converter and a four-switch inverter. In addition, as the current and torque ripples are generated by a voltage difference between back EMF and dc link voltage, these ripples could be reduced according to the controlled dc-link voltage according to the motor speed. The validity of the proposed inverter is verified by informative simulation and experimental results.

Fast Voltage-Balancing Scheme for a Carrier-Based Modulation in Three-Phase and Single-Phase NPC Three-Level Inverters

  • Chen, Xi;Huang, Shenghua;Jiang, Dong;Li, Bingzhang
    • Journal of Electrical Engineering and Technology
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    • v.13 no.5
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    • pp.1986-1995
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    • 2018
  • In this paper, a novel neutral-point voltage balancing scheme for NPC three-level inverters using carrier-based sinusoidal pulse width modulation (SPWM) method is developed. The new modulation approach, based on the obtained expressions of zero sequence voltage in all six sectors, can significantly suppress the low-frequency voltage oscillation in the neutral point at high modulation index and achieve a fast voltage-balancing dynamic performance. The implementation of the proposed method is very simple. Another attractive feature is that the scheme can stably control any voltage difference between the two dc-link capacitors within a certain range without using any extra hardware. Furthermore, the presented scheme is also applicable to the single-phase NPC three-level inverter. It can maintain the neutral-point voltage balance at full modulation index and improve the voltage-balancing dynamic performance of the single-phase NPC three-level inverter. The performance of the proposed strategy and its benefits over other previous techniques are verified experimentally.

Study on the High Voltage Pulse Profile Characteristics of a Turbulently Heated Theta Pinch (난류가열 쎄타핀치의 고전압 펄스 발생에 관한 연구)

  • 강형보;정운관;육종철
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.33 no.11
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    • pp.456-463
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    • 1984
  • The fast-rising high-voltage pulse generation circuit system of a theta pinch is both theoretically and experimentally investigated. The idealized model of this circuit system is a hybrid circuit system composed of three parts: a lumped circuit part being consisted of a capacitor bank and a spark switch connected in series, another lumped circuit part being consisted of the Blumlein transmission line, whose end load is the pinch coil. the voltage difference between two ends of the pinch coil is formulated by analyzing this hybrid circuit system by means of the law of the signal propagation in the transmission line and Kirchhoff's laws. The expedient numerical method for computer calculation is developed to generate the pulse profile of the voltage difference across the pinch coil. The period of the experimentally measured main pulse is a fourth of the theoretical one neglecting the resistance of the pinch coil. We attribute this discrepancy to the modelling in the theoretical calculation that hte resistance and inductance of the spark switch and capacitor bank are assumed to be constant through discharge. Therefore, we can see that the rise time of the imploding magnetic-field pulse is mainly dependent on the spark switch and capacitor bank.

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Increase of voltage ratings in the superconducting fault current limiter using thin films by shunt resistors (션트저항을 통한 박막형 초전도 한류기의 전압등급 증대)

  • 최효상;김혜림;황시돌;박권배;현옥배
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2001.02a
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    • pp.176-177
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    • 2001
  • Three nearly identical superconducting fault current limiters (SFCLs) were connected in series to increase the voltage ratings. A slight difference in the quench starting point of individual SFCL units produced significantly imbalanced power distribution when connected in series. The imbalance was successfully removed by connecting a shunt resistor to one SFCL in parallel. 1.2 kV SFCL was designed with five current limiting elements and two or three shunt resistors.

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Probeless Estimation of Electroluminescence Intensities Based on Photoluminescence Measurements of GaN-Based Light-Emitting Diodes

  • Kim, Jongseok;Jeong, Hoon;Choi, Won-Jin;Jung, Hyundon
    • Current Optics and Photonics
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    • v.5 no.2
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    • pp.173-179
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    • 2021
  • The electroluminescence (EL) intensities of GaN-based light-emitting diodes (LEDs) are estimated based on their photoluminescence (PL) properties. The PL intensity obtained under open-circuit conditions is divided into two parts: the PL intensity under a forward bias lower than the optical turn-on voltage, and the difference between the PL intensities under open-circuit conditions and under forward bias. The luminescence induced by photoexcitation under a constant forward bias lower than the optical turn-on voltage is primarily the PL from the excited area of the LED. In contrast the intensity difference, obtained by subtracting the PL intensity under the forward bias from that under open-circuit conditions, contains the EL induced by the photocarriers generated during photoexcitation. In addition, a reverse photocurrent is generated during photoexcitation under constant forward bias across the LED, and can be correlated with the PL-intensity difference. The relationship between the photocurrent and PL-intensity difference matches well the relationship between the injection current and EL intensity of LEDs. The ratio between the photocurrent generated under a bias and the short-circuit current is related to the ratio between the PL-intensity difference and the PL intensity under open-circuit conditions. A relational expression consisting of the ratios, short-circuit current, and PL under open-circuit conditions is proposed to estimate the EL intensity.

Threshold Voltage Control through Layer Doping of Double Gate MOSFETs

  • Joseph, Saji;George, James T.;Mathew, Vincent
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.10 no.3
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    • pp.240-250
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    • 2010
  • Double Gate MOSFETs (DG MOSFETs) with doping in one or two thin layers of an otherwise intrinsic channel are simulated to obtain the transport characteristics, threshold voltage and leakage current. Two different device structures- one with doping on two layers near the top and bottom oxide layers and another with doping on a single layer at the centre- are simulated and the variation of device parameters with a change in doping concentration and doping layer thickness is studied. It is observed that an n-doped layer in the channel reduces the threshold voltage and increases the drive current, when compared with a device of undoped channel. The reduction in the threshold voltage and increase in the drain current are found to increase with the thickness and the level of doping of the layer. The leakage current is larger than that of an undoped channel, but less than that of a uniformly doped channel. For a channel with p-doped layer, the threshold voltage increases with the level of doping and the thickness of the layer, accompanied with a reduction in drain current. The devices with doped middle layers and doped gate layers show almost identical behavior, apart from the slight difference in the drive current. The doping level and the thickness of the layers can be used as a tool to adjust the threshold voltage of the device indicating the possibility of easy fabrication of ICs having FETs of different threshold voltages, and the rest of the channel, being intrinsic having high mobility, serves to maintain high drive current in comparison with a fully doped channel.

Step-up and Step-down Asymmetrical 24-Pulse Autotransformer Rectifier

  • Zhang, Lu;Ge, Hong-juan;Jiang, Fan;Yang, Guang;Lin, Yi
    • Journal of Power Electronics
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    • v.18 no.5
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    • pp.1536-1544
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    • 2018
  • The existing 24-pulse autotransformer rectifier unit (ATRU) needs interphase reactors for parallel work of the rectifier bridges, and its output voltage cannot be regulated. Aiming at these problems, a step-up and step-down asymmetrical 24-pulse ATRU is proposed in this paper. The connections and turns ratios among transformer windings are well designed. In addition, a 15-degree phase difference is formed between two of the 24 voltage vectors produced by the transformer, which makes the four rectifier bridge groups produce a 24-pulse DC voltage without interphase reactors. Meanwhile, by adding extended winding to each phase of the transformer, wide-range regulation of the ATRU output voltage can be realized, and the reasonable voltage regulation range is between 0.2 and 1.6. The superposition of the voltage vectors and the principle of the voltage regulation are analyzed in detail. Furthermore, the turns ratio of the windings, winding current, output voltage, and kilovolt-ampere rating are all derived. Finally, the simulations and experiments are carried out, and the correctness of the principle and theoretical analysis of the new 24-pulse ATRU are verified.

A Wide Voltage-Gain Range Asymmetric H-Bridge Bidirectional DC-DC Converter with a Common Ground for Energy Storage Systems

  • Zhang, Yun;Gao, Yongping;Li, Jing;Sumner, Mark
    • Journal of Power Electronics
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    • v.18 no.2
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    • pp.343-355
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    • 2018
  • A wide-voltage-conversion range bidirectional DC-DC converter is proposed in this paper. The topology is comprised of one typical LC energy storage component and a special common grounded asymmetric H-bridge with four active power switches/anti-parallel diodes. The narrow output PWM voltage is generated from the voltage difference between two normal (wider) output PWM voltages from the asymmetric H-bridge with duty cycles close to 0.5. The equivalent switching frequency of the output PWM voltage is double the actual switching frequency, and a wide step-down/step-up ratio range is achieved. A 300W prototype has been constructed to validate the feasibility and effectiveness of the proposed bidirectional converter between the variable low voltage side (24V~48V) and the constant high voltage side (200V). The slave active power switches allow ZVS turn-on and turn-off without requiring any extra hardware. The maximum conversion efficiency is 94.7% in the step-down mode and 93.5% in the step-up mode. Therefore, the proposed bidirectional topology with a common ground is suitable for energy storage systems such as renewable power generation systems and electric vehicles with a hybrid energy source.

Development of Plastic Film Type Submersion Sensor (플라스틱 필름형 침수센서 개발)

  • Lee, Young Tae;Kwon, Ik Hyun
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.2
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    • pp.107-111
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    • 2022
  • In this paper, a plastic film type submersion sensor capable of measuring submersion speed was developed. This submersion sensor is designed as a capacitive type, and it is a sensor that outputs the change in capacitance between the electrode of the submersion sensor and the grounded body as a voltage through a C-V(capacitance-voltage) converter. We developed an submersion sensor in which two electrodes of different lengths are connected in parallel to measure the submersion speed accurately by minimizing the influence of noise such as contamination. When both electrodes of the submersion sensor are exposed to water, the rate of change of water level suddenly increases, so the submersion speed is measured by measuring the time to this point. Since the difference in length between the two electrodes of the submersion sensor does not change in any case, it is possible to accurately measure the submersion speed.

Determination of the voltage distribution in the external electrode fluorescent lamps for the backlight unit of large-size LCD

  • Choi, Jae-Young;Kim, Young-Youb;Ko, Jae-Hyeon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1374-1377
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    • 2006
  • The voltage distribution of an external electrode fluorescent lamp(EEFL) having a gas pressure of 50 torr and a gas composition of Ne:Ar with a ratio of 90:10 has been estimated by varying the distance between the two external electrodes and monitoring the change of the lamp voltage. The estimated voltage gradient, which represents the electric field in the positive column of the EEFL, was very sensitive to the electrode area of EEFL and was in the range of $13\;{\sim}\;27\;V/cm$ at the electrode length of $15\;{\sim}\;31\;mm$. Changing the lamp current in the range $3\;{\sim}\;5\;mA$ did not make noticeable difference in the electric field of the positive column. Theses results may serve as basic data for the optimization of electric and optic characteristics of EEFL.

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