• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.521-524
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• 2012

We report on variations of electrical properties with different active layer thickness and post-annealing temperature in amorphous In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). In particular, subthreshold swing (SS) of the IGZO-TFTs was improved as increasing the active layer thickness at an given post-annealing temperature, accompanying the negative shift in turn-off voltage. However, as increasing post-annealing temperature, only turn-off voltage was shifted negatively with almost constant SS value. The effect of the active layer thickness and post-annealing temperature on electrical properties, such as SS, field effect mobility and turn-off voltage in IGZO-TFTs has been explained in terms of the variation of trap density in IGZO channel layer and at gate dielectric/IGZO interface.

• Korean Journal of Applied Biomechanics
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• v.22 no.2
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• pp.209-217
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• 2012

The purpose of this study was to develop a turn-type treatment program which applies the principle of spotting and a roll-type treatment program that induces off-vertical axis. 29 collegiate students volunteered for this study. 12-week treatment programs were applied to both 15 students for turn-type treatment group and 14 students for roll-type treatment group. As an analytic tool, eye camera was employed to verify the treatment programs for a stimulus upon a turn, recovery after a stimulus upon a turn, and nystagmus that affects a vestibular system. Two-way ANOVA with repeated measures was applied to see the significant differences between the treatment groups, and between the test periods. For Post-Hoc Test, paired t-test was used to within the group and independent t-test was used to between the groups. The results indicated that roll-type treatment training has maximized a stimulus on nystagmyus during the stimulus by a roll. Turn-type treatment training has maximized a stimulus on nystagmyus right after a stimulus by a roll and significantly decreased the intensity of nystagmyus during the recovery. Both turn and roll type treatments have reduced the recovery time which from nystagmyus to a normal status. Roll-type treatment has showed a much shorter recovery time for nystagmyus than the roll-type treatment has. Based on the results of treatment programs developed in this study, we expect the treatment programs can be applied to treat dizziness and to improve the function of vestibular system as a rehabilitation tool.

• International Journal of Highway Engineering
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• v.15 no.5
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• pp.111-122
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• 2013

PURPOSES : The purpose of this system (Rear Lighting System) is to provide illumination for the driver to operate the commercial vehicle safely after dark in highway, to increase the conspicuity of the vehicle, and especially be suggesting the finest observable improvement method, depending on color and pattern of rear lighting system of truck for midnight highway traffic. METHODS : Rear lightning system as an improving way for forward commercial vehicles lighting the securing sight from human factors and the surrounding environment in midnight driving. For this one, basic materials were collected from the data analysis about many types of problems, and filed investigation for establishing Driving Simulator. also taking statistic test to human volunteers after finding recognizable distance of them. RESULTS : As a result, color with the highest visuality is amber followed by green-red-blue as in order for all road types. Especially almost no difference is found between red and green, also when the light is turn off, recognizable distances is wide difference compared to turn on the light. One more thing about study per pattern, upper and entire lighting have similar recognizable distances, but under lighting shows short distance with difficulty securing sight from medians. And straight section shows similar recognizable distances. By finding visuality improvement method depending on color and pattern of supplement taillight, it is expected to suggest quantitative judgement standard for introducing regulation and improvement of supplement taillight. CONCLUSIONS : Night time vehicle conspicuity to the rear is provided by rear position lamps. this study is showed that the color of light ramp is not important to be safe driving, most important is to turn on the light, recognizable distances is big different compared to turn off the rear light, so when the drivng dark in highway, have to turn on the light for reducing risk.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.5
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• pp.69-76
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• 2016

Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.371-375
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• 2000

In this paper a new conductivity modulated power transistor called the Lateral Insulated Gated Bipolar Transistor which included n+ ring and p-channel gate is presented. A new lateral IGBT structure is proposed to suppress latch-up and to improve turn off time by imploying n+ ring and p-channel gate and verified by MEDICI. The simulated I-V characteristics at $V_{G}$=15V show that the latch up occurs at $V_{A}$=18V and 6.9$\times$10$^{-5}$ A/${\mu}{\textrm}{m}$ for the proposed LIGBT while the conventional LIGBT latches at $V_{A}$=1.3V and 1.96${\mu}{\textrm}{m}$10$^{-5A}$${\mu}{\textrm}{m}$. It is shown that turn off characteristic of new LIGBT is 8 times than that of conventional LIGBT. And noble LIGBT is not n+ buffer layer because that It includes p channel gate and n+ ring. Therefore Mask for the buffer layer isn’t needed. The concentration of n+ ring is and the numbers of n+ ring and p channel gate are three for the optimal design.n.n.n.n.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.43-53
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• 2007

We have analyzed low current operation characteristics of a VCSEL transmitter operating at fixed Current over wide temperature range. Used 850 nm oxide VCSEL has low temperature dependence of the threshold current and $d^2I_{th}/dT^2$ is approximately $1.346\times10^{-4}mA/^{\circ}C^2$. We fixed on-current so that output power from the chip is 1 mW at $20^{\circ}C$ and investigated the turn-on, turn-off characteristics and eye-diagram of the 850 nm oxide VCSEL transmitter with varying ambient temperature and off-current. We measured rise time, fall time, extinction ratio and timing jitter by changing tile ambient temperature and off-current. With the fixed off-current of around $0.1\sim0.2mA$ lower than the lowest threshold current the transmitter successfully operated at 1.25 Gbps over a wide temperature range from $-20^{\circ}C$ to $80^{\circ}C$.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.2B no.4
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• pp.207-213
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• 2002

The paper introduces a switched reluctance motor drive system based on an 80C31 and an Intel 80C 196KB single-chip microprocessor control. Advance schemes are used in turn-on and turn-off angles with the power converter's main switches during traction and regenerative braking. The principles of traction speed control and braking torque control are given. The hardware and software patterns in the 80c31 and the Intel 80C196KB single-chip microprocessor control system are also presented.

• Journal of Electrical Engineering and Technology
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• v.13 no.1
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• pp.124-132
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• 2018

This paper proposes an LLC resonant converter based battery charger which utilizes an adaptive turn ratio scheme to achieve a wide output voltage range and high efficiency. The high frequency transformer of the LLC converter of the proposed strategy has an adaptively changed turn ratio through the auxiliary control circuit. As a result, an optimized converter design with high magnetizing inductance is possible, while minimizing conduction and turn-off losses and providing a regulated voltage gain to properly charge the lithium ion battery. For a step-by-step explanation, operational principle and optimal design considerations of the proposed converter are illustrated in detail. Finally, the effectiveness of the proposed strategy is verified through various experimental results and efficiency analysis based on prototype 300W Li-ion battery charger and battery pack.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.460-465
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• 1998

Due to high power ratings and low conduction loss, the IGBT has become more attractive in switching power supplies. However, its turn-on and turn-off characteristics cause severe switching loss and switching frequency limitation. This paper proposes 2.4kW, 48V, high efficiency half-bridge DC-DC converter using paralleled IGBT-MOSFET switch concept, where each of IGBT and MOSFET plays its part during on-periods and switching instants. The switching loss is analyzed by using the linearized model and the opteration of the converter are investigated by simulation results.

• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.266-269
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• 2000

This paper presents a novel single-stage unity power factor converter which features the reduced switching losses by zero-voltage switching and zero-current switching (ZVZCS). Hence the turn-on and turn-off losses of switches are sufficiently reduced. And the reduced conduction losses are achieved by the elimination of one leg of front-end rectifier. And low on-resistance MOSFETs (Synchronous Rectifier) are used in the rectifier at the secondary side of high frequency transformer instead of diodes. Theoretical analysis simulated results of a AC to DC 150W(5V, 30A) converter are presented.