Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Properties Depending on Active Layer Thickness and Annealing Temperature in Amorphous In-Ga-Zn-O Thin-film Transistors

활성층 두께 및 열처리 온도에 따른 비정질 인듐갈륨징크옥사이드 박막트랜지스터의 전기적 특성 변화

  • Baek, Chan-Soo (College of Electrical Engineering, Chungbuk National University) ;
  • Lim, Kee-Joe (College of Electrical Engineering, Chungbuk National University) ;
  • Lim, Dong-Hyeok (Display Engineering School, Doowon Technical University College) ;
  • Kim, Hyun-Hoo (Display Engineering School, Doowon Technical University College)
  • 백찬수 (충북대학교 전기공학부) ;
  • 임기조 (충북대학교 전기공학부) ;
  • 임동혁 (두원공과대학교 디스플레이공학부) ;
  • 김현후 (두원공과대학교 디스플레이공학부)
  • Received : 2012.06.14
  • Accepted : 2012.06.24
  • Published : 2012.07.01
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Abstract

We report on variations of electrical properties with different active layer thickness and post-annealing temperature in amorphous In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). In particular, subthreshold swing (SS) of the IGZO-TFTs was improved as increasing the active layer thickness at an given post-annealing temperature, accompanying the negative shift in turn-off voltage. However, as increasing post-annealing temperature, only turn-off voltage was shifted negatively with almost constant SS value. The effect of the active layer thickness and post-annealing temperature on electrical properties, such as SS, field effect mobility and turn-off voltage in IGZO-TFTs has been explained in terms of the variation of trap density in IGZO channel layer and at gate dielectric/IGZO interface.

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References

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