• Journal of Korean Society of Transportation
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• v.4 no.2
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• pp.3-14
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• 1986

This study was undertaken to develop the gap acceptance model of left-turn drivers on the major road at intersections. Typical unsignalized intersections on the two-lane and four-lane streets in Masan City were selected for the study intersection. For the gap distribution model, the lognormal, negative exponential, shifted negative exponential, and Gamma distributions were tested using the x2 and K-S tests. Based on the results for both streets, it was concluded that among the distributions tested the lognormal distribution represented the gap distribution best, followed by the shifted negative exponential distribution. Stochastic models of the gap-acceptance behavior of left-turn drivers on the major road at unsignalized intersections were programmed using SLAM Ⅱ, a simulation computer language. A stochastic model was selected for the gap-acceptance behavior to compare the results of the simulation with the observed data. The model assumes that a fixed critical acceptance gap is assigned to each left-turn driver based on a normal distribution and the gap distribution of the opposing traffic stream follows the shifted negative exponential distribution.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.33 no.4
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• pp.157-163
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• 1984

The object of this paper is to investigte the gate controlled diode structure for ionic concentration measurement. It includes device fabrication, characterization, device physics and modeling of the gate controlled diode structure. The differences of turn on voltages and surface generation currents in the (100) and (111) silicon crystallographic orientation of the sample device were observed. Therefore the dependence of these two factors of the silicon crystallographic orientation was investigated. It was observed that drifts arose after extended immersion of the sample device in acid or base solutions. The surface generation-recombination velocity of both (100) and (111) increased. The increase in the interfacial traps for both surface, determined by the turn on voltage was directly proportional to the surface generation-recombination velocity increase.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.10
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• pp.1384-1392
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• 2014

This paper presents a torque ripple reduction algorithm for the switched reluctance motor drives using the fuzzy logic and the sliding mode control. A turn-on angle controller based on the fuzzy logic determines the optimal turn-on angle. In addition, a sliding mode torque control (SMTC) methods reduces torque ripples instantaneously in the commutation region. The proposed algorithm does not require complex system models considering nonlinear magnetizing or demagnetizing periods of the phase current. According to the rotor speed and torque, the proposed controller changes the turn-on angle and reference torque instantaneously until the torque ripples are minimized. The simulation and experimental results verify the validity of minimizing the torque ripple performance.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.10 s.352
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• pp.10-21
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• 2006

We have studied the characteristics of oxide VCSELS when their off-current and on-current are kept small in order to find out the possibility of low current operation. A large signal equivalent circuit model has been used. By comparing measured data and simulation results, the parameters of the large signal models are obtained including the capacitances. Using the large signal model, we have investigated the effects of capacitance and on/off currents upon the turn-on/turn-off characteristics and eye diagram. According to the experiment and simulation, the depletion capacitance, which has been neglected, is found to have significant influence on the him-on delay and eye-diagram. Therefore, for high speed and low current operation, the reduction of the depletion capacitance is essential.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.9
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• pp.466-470
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• 2001

We have developed a sub-micron gap fabrication technology using chemical-mechanical polishing (CMP) without /the sub-micron lithography equipments (0.18∼0.25 7m). And it has been applied to a lateral field emission device (FED), in which narrow gap distance is very important for reducing turn-on voltage. As a result, the turn-on voltage (at which the current level is 1 nA) of the fabricated device with the gap distance of 256 nm is as low as 4.0 V, which is the lowest turn-on voltage among lateral FEDs ever reported.

• ETRI Journal
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• v.31 no.6
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• pp.725-731
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• 2009

In this paper, electrostatic discharge (ESD) protection circuits with an advanced substrate-triggered NMOS and a gate-substrate-triggered NMOS are proposed to provide low trigger voltage, low leakage current, and fast turn-on speed. The proposed ESD protection devices are designed using 0.13 ${\mu}m$ CMOS technology. The experimental results show that the proposed substrate-triggered NMOS using a bipolar transistor has a low trigger voltage of 5.98 V and a fast turn-on time of 37 ns. The proposed gate-substrate-triggered NMOS has a lower trigger voltage of 5.35 V and low leakage current of 80 pA.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.53 no.3
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• pp.148-151
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• 2004

For turn on high pressure sodium vapor lamp, Starting Voltage is very important factor. This starting voltage supply to high pressure sodium vapor lamp as electric discharge lamp, Electric field is producted in electric discharge tube, So accelerative electron collide against vapor atom and second electron is generated, And rapidly the current flow to electric discharge tube. This starting voltage is high voltage and source for melting contact that relay is according as turn on/off high pressure sodium vapor lamp. Consequently, This paper propose that the prevention of melting contact in accordance relay of controller for turn on/off high pressure sodium vapor lamp.

• Proceedings of the KIEE Conference
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• 2001.10a
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• pp.122-124
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• 2001

In this paper, the influence of electrical parameters such as the turn-on and turn-off angle on the torque and force characteristics is investigated for the reduction of the torque ripple which is main source of vibration and noise in switched reluctance motor (SRM). The four different types of the turn-on angle are set to the section of rising inductance profile respectively. The optimum turn-on angle is proposed for the acquisition of the flat current shape minimizing the torque ripple. 2D finite element method (FEM) considering the iron saturation and the actual switching circuit of the SRM drive is applied for the dynamic analysis. The simulation results of phase current and torque are also compared to the experimental results.

• Korean Architects
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• s.642
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• pp.130-132
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• 2022

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.5 no.2 s.10
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• pp.61-71
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• 2006

The main purpose of this study is to search a method for reducing traffic accident at signalized intersections. One of the important factors for this is the Left-turn phase sequence. In 1985, the operational principle of Left-turn phase Sequence was changed from Lagging left-turn to Leading left-turn in Korea. Then there was a resonable motive-no exclusive left turn-lane and narrow intersection. So, it is necessary to evaluate the performance difference between Leading and Lagging left -turn phase Sequence. The process of this study is as follows: $\cdot$ First, all the intersection was divided three parts for analysis the traffic safety: Inside part of an Intersection, Crosswalk, Intersection approach and exit. $\cdot$ Second, a safety analysis was performed by using the concepts of 'Effective interphase Period(EIP)' and 'Conflict method' The Study result is that the benefit of of phase Sequence changes from Leading to Lagging phase were significant. For an example the Accident cost will reduced about 41.8 billion won per year in korea.