The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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A Novel Sub-Micron Gap Fabrication Technology using Chemical-Mechanical Polishing (CMP) for Lateral Field Emission Device (FED)

측면 전계 방출 소자를 위한 화학적-기계적 연마를 이용한 새로운 미소 간격 제작 기술

  • 이춘섭 (한국과학기술원 전기 및 전자공학과) ;
  • 한철희 (한국과학기술원 전기 및 전자공학과)
  • Published : 2001.09.01
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Abstract

We have developed a sub-micron gap fabrication technology using chemical-mechanical polishing (CMP) without /the sub-micron lithography equipments (0.18∼0.25 7m). And it has been applied to a lateral field emission device (FED), in which narrow gap distance is very important for reducing turn-on voltage. As a result, the turn-on voltage (at which the current level is 1 nA) of the fabricated device with the gap distance of 256 nm is as low as 4.0 V, which is the lowest turn-on voltage among lateral FEDs ever reported.

Keywords

References

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