• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2014년도 전력전자학술대회 논문집
• /
• pp.75-76
• /
• 2014

기존 Induction Heating(IH) 인버터의 경우, 파라미터의 변화가 매우 크기 때문에 높은 Turn-off 전류에서 스위칭 하여 전력 손실이 매우 커지는 문제점이 있다. 본 논문은 고효율 IH 인버터를 위한 공진점 추적 제어 기법을 제안한다. 기존의 IH 직렬 공진형 인버터의 경우에는 높은 Turn-off 전류를 가지고 있기 때문에 손실이 매우 크고, Heat-sink 크기가 커지는 단점이 있다. 반면 제안된 공진점 추적 제어 기법을 적용한 IH 직렬 공진형 인버터는 Turn-off 전류가 매우 낮은 상태에서 영전압 스위칭을 하기 때문에, 전력 손실이 매우 작고 Heat-sink 최소화 및 고효율화가 가능한 장점을 갖는다. 본 논문에서는 제안된 공진점 추적 제어 기법의 이론적인 특성을 분석하고 모의실험을 통해 확인하였으며, 3.6kW급 IH 직렬 공진형 인버터회로에 적용하여 실험을 통해 우수성을 검증하였다.

• International Journal of Precision Engineering and Manufacturing
• /
• 제2권1호
• /
• pp.33-42
• /
• 2001

In switched reluctance motor(SRM) deives, the turn-on and turn-off angles of each phase switch should be accurately controlled for accuracy and efficiency. The accuracy of the switching angles is mainly dependent upon the resolution of the encoder and the sampling period of the microprocessor, that are used to provide the information of the rotor position and to implement a control algorithm of the SRM, respectively. Thus, the higher the speed of the SRM is increased, the larger the amount of the switching angle deviations are from preset turn-on and turn-off angles. Consequently, the motor can not be driven stably high speed region. There fore, a simples and low cost encoder suitable for the practical and stable SRM drive is proposed and the control algorithm to provide the switching signals using a simple digital logic circuit is also presented for a wide speed range operation.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 1998년도 전력전자학술대회 논문집
• /
• pp.323-327
• /
• 1998

Under high power IGBTs Switching, a large overvoltage is induced across the IGBT module due to the stray inductance in the circuit. This paper proposes a new gate drive circuit for high power IGBTs which can actively suppress the overvoltage across the driven IGBT at turn-off while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage can be limited much effectively at the fault collector current. Experimental results under various normal and fault conditions prove the effectiveness of the proposed.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2009년도 정기총회 및 추계학술대회 논문집
• /
• pp.155-157
• /
• 2009

This paper proposed a soft switching boost converter with an auxiliary circuit, and a modified control method for reduction of switch stress. The proposed converter applies an auxiliary circuit, which is added to the conventional boost converter and used to achieve soft switching for both a main switch and an auxiliary switch. The auxiliary circuit consist of a resonant inductor and two capacitors, an auxiliary switch. The main switch is operated ZVS turn-on, turn-off also auxiliary switch is operated ZCS turn-on, ZVS turn-off. The proposed soft switching boost converter has lower switch loss and higher efficiency than conventional soft switching boost converter.

• 한국철도학회:학술대회논문집
• /
• 한국철도학회 2007년도 추계학술대회 논문집
• /
• pp.1438-1444
• /
• 2007

Standard Gate Turn Off (GTO) Thyristor drive technology results in inhomogeneous turn-on and turn-off transients which in turn needs costly dv/dt and di/dt snubber circuits. Added to this GTO is bulky in size, needs external cooling, slower switching time etc. The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO technology. Indian Railway has developed first IGBT based traction converter and was commissioned in November 2006. Some of the supremacy of IGBT are smaller in size, no external cooling is required, built in power supply which enhances reliability, lower switching losses which leads to higher efficiency, reduced gate drive, high frequency operation in real time etc. These advantages are highlighted along with IGBT Traction system in operation.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.1096-1099
• /
• 2001

The basic design structure of RC-GCTs (Reserve-Conducting Gate-Commutated Thyristors) is firstly given in this paper. The bulk of wafer is punch-through (PT) type with high resistivity and narrow N-base width. The photo-mask was designed upon the turn-off characteristics of GCT and solution of separation between GCT and diode part. The center part of Si wafer is free-wheeling diode (FWD) and outer is GCT part which has 240 fingers totally. The switching performance of GCT was investigated by Dessis of ISE. The basic manufacture process of 2500V-4500V RC-GCTs was given in this work. Additionally, the local carrier lifetime control by 5Mev proton irradiation was adopted so as to not only to have the softness of reverse recovering for FWD but for reduction of turn-off losses of GCT as well.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
• /
• 제48권2호
• /
• pp.83-88
• /
• 1999

Series connection of power semiconductor devices is selected in high voltage and high power applications. It is important to prevent the overvoltage from being induced across a device above ratings by the proper voltage balancing in the field of IGBT series connection. In addition, the overvoltage induced by a stray inductance has to be limited in the high power circuit. This paper proposes a new gate control scheme which can balance the voltage properly and limit the overshoot by controlling the slope of collector voltage under the turn-off transient in the series connected IGBTs. The proposed gate control scheme changes the slope of collector voltage by sensing the collector voltage and controlling the gate signal actively. The new series connected IGBT gate driver is made and its validity is verified by the experimental results for series connected IGBT circuit.

• 대한안전경영과학회지
• /
• 제16권2호
• /
• pp.167-174
• /
• 2014

Heating and air conditioning system is changing rapidly from the traditional HVAC central supply system to the individual supply system with electrical heat pump system (EHP) in Korean school buildings. The individual supply system has advantages to turn on and off individually and to adjust the thermal comfort separately, but energy is wasted in the unoccupied classroom when the last leaving occupant does not turn off the controller. If the controller is to be off automatically while the classroom is not in use, energy consumption would decrease dramatically. This project aims to cease the unnecessary EHP supply in vacant classroom by inputting the class schedule from the central control room to reduce the energy-spending. Experimental measurements were carried out between the controlled classroom that is turned off when not in use and the uncontrolled room that is turned on continually. Occupant's comfort and energy consumption were measured and compared between the controlled case and the uncontrolled case. The energy consumption of controlled classroom case is 30-60% less than that of the uncontrolled classroom case. This result shows that controlling the cooling supply for the unoccupied classroom using the class schedule can decrease the energy consumption remarkably. This supply control system can be used to conserve energy in school structures like universities.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2002년도 전력전자학술대회 논문집
• /
• pp.759-762
• /
• 2002

A ZCT(Zero Current Transition) PWM(Pulse-Width-Modulation) boost converter using parallel MOSFET switch is proposed in this paper. The IGBT(main switch) of the proposed converter is always turned on with zero current switching and turned off with zero current/zero voltage switching. The MOSFET(auxiliary switch) is also operates with soft switching condition. In addtion to, the proposed converter eliminates the reverse recovery current of the freewheeling diode by adding the resonant inductor, Lr, in series with the main switch. Therefore, the turn on/turn off switching losses of switches are minimized and the conduction losses by using IGBT switch are reduced. In addition to, using parallel MOSFET switch overcomes the switching frequency limitation occurred by current tail. As mentioned above, the characteristics are verified through experimental results.

• 전자공학회논문지
• /
• 제53권5호
• /
• pp.69-76
• /
• 2016

MCT (MOS Controlled Thyristor)의 전류 구동능력은 도통상태의 MCT를 턴-오프 시킬 수 있는 능력, 즉 off-FET의 성능에 의해 결정되고, MCT의 주된 응용분야인 펄스파워 분야에서는 턴-온 시의 피크전류($I_{peak}$)와 전류상승기울기(di/dt) 특성이 매우 중요하다. 이러한 요구사항을 만족시키기 위해서는 MCT의 on/off-FET 성능 조절이 중요하지만, 깊은 접합의 P-웰과 N-웰을 형성하기 위한 삼중 확산공정과 다수의 산화막 성장공정은 이온주입 불순물의 표면농도를 변화시키고 on/off-FET의 문턱전압($V_{th}$) 조절을 어렵게 한다. 본 논문에서는 on/off-FET의 $V_{th}$를 개선하기 위한 채널영역 문턱전압 이온주입에 대하여 시뮬레이션을 진행하고 이를 토대로 제작한 MCT의 전기적 특성을 비교 평가하였다. 그 결과 문턱전압 이온주입을 진행한 MCT의 경우(활성영역=$0.465mm^2$) $100A/cm^2$ 전류밀도에서의 전압손실($V_F$)은 1.25V, 800V의 어노드 전압에서 $I_{peak}$ 및 di/dt는 290A와 $5.8kA/{\mu}s$로 문턱전압 이온주입을 진행하지 않은 경우와 유사한 특성을 나타낸 반면, $100A/cm^2$의 구동전류에 대한 턴-오프 게이트전압은 -3.5V에서 -1.6V로 감소하여 MCT의 전류 구동능력을 향상시킴을 확인하였다.