• Title/Summary/Keyword: Tunneling nanotube

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Mycoplasma exploits mammalian tunneling nanotubes for cell-to-cell dissemination

  • Kim, Bong-Woo;Lee, Jae-Seon;Ko, Young-Gyu
    • BMB Reports
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    • v.52 no.8
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    • pp.490-495
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    • 2019
  • Using tunneling nanotubes (TNTs), various pathological molecules and viruses disseminate to adjacent cells intercellularly. Here, we show that the intracellular invasion of Mycoplasma hyorhinis induces the formation of actin- and tubulin-based TNTs in various mammalian cell lines. M. hyorhinis was found in TNTs generated by M. hyorhinis infection in NIH3T3 cells. Because mycoplasma-free recipient cells received mycoplasmas from M. hyorhinis-infected donor cells in a mixed co-culture system and not a spatially separated co-culture system, direct cell-to-cell contact via TNTs was necessary for the intracellular dissemination of M. hyorhinis. The activity of Rac1, which is a small GTP binding protein, was increased by the intracellular invasion of M. hyorhinis, and its pharmacological and genetic inhibition prevented M. hyorhinis infection-induced TNT generation in NIH3T3 cells. The pharmacological and genetic inhibition of Rac1 also reduced the cell-to-cell dissemination of M. hyorhinis. Based on these data, we conclude that intracellular invasion of M. hyorhinis induces the formation of TNTs, which are used for the cell-to-cell dissemination of M. hyorhinis.

An Atomistic Modeling for Electromechanical Nanotube Memory Study (원자단위 Electromechanical 모델링을 통한 나노튜브 메모리 연구)

  • Lee, Kang-Whan;Kwon, Oh-Keun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.2
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    • pp.116-125
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    • 2006
  • We have presented a nanoelectromechanical (NEM) model based on atomistic simulations. Our models were applied to a NEM device as called a nanotube random access memory (NRAM) operated by an atomistic capacitive model including a tunneling current model. We have performed both static and dynamic analyses of a NRAM device. The turn-on voltage obtained from molecular dynamics simulations was less than the half of the turn-on voltage obtained from the static simulation. Since the suspended carbon nanotube (CNT) oscillated with the amplitude for the oscillation center under an externally applied force, the quantity of the CNT-gold interaction in the static analysis was different from that in the dynamic analysis. When the gate bias was applied, the oscillation centers obtained from the static analysis were different from those obtained from the dynamics analysis. Therefore, for the range of the potential difference that the CNT-gold interaction effects in the static analysis were negligible, the vibrations of the CNT in the dynamics analysis significantly affected the CNT-gold interaction energy and the turn-on voltage. The turn-on voltage and the tunneling resistance obtained from our tunneling current model were in good agreement with previous experimental and theoretical works.

Carbon Nanotube Gate-Elongated Tunneling Field Transistor(CNT G-E TFET) to Reduce Off-Current

  • Heo, Jae;Jeon, Seung-Bae
    • Proceeding of EDISON Challenge
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    • 2013.04a
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    • pp.240-242
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    • 2013
  • In this paper, novel Carbon Nanotube Gate-Elongated Tunneling Field Transistor(CNT G-E TFET) is proposed. This proposed device is designed to decrease off-current around 2~6 orders of magnitude compared to the gate-channel size matched TFET. Mechanism of CNT G-E TFET creates additional steps in energy band structure so that off-current can be reduced. Since CNT TFETs show a great probability for tunneling processes and they are beneficial for the overall device performance in terms of switching speed and power consumption, CNT G-E TFET looks pretty much promising.

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Electron Field Emission for a Cylindrical Emitter of Single Carbon Nanotube

  • Lee, Youn-Ju;Kim, Chang-Duk;Lee, Hyeong-Rag
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.764-767
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    • 2007
  • We investigated the field emission of single carbon nanotube including the anode effect by calculating the tunneling probability of an electron. The experimental results from this study were in agreement with our theoretical calculations. The constant enhancement factor was calculated using an approximation of the potential barrier.

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Field-effect Ion-transport Devices with Carbon Nanotube Channels: Schematics and Simulations

  • Kwon Oh Kuen;Kwon Jun Sik;Hwang Ho Jung;Kang Jeong Won
    • Proceedings of the IEEK Conference
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    • 2004.08c
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    • pp.787-791
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    • 2004
  • We investigated field-effect ion-transport devices based on carbon nanotubes by using classical molecular dynamics simulations under applied external force fields, and we present model schematics that car be applied to the nanoscale data storage devices and unipolar ionic field-effect transistors. As the applied external force field is increased, potassium ions rapidly flow through the nanochannel. Under low external force fields, ther nal fluctuations of the nanochannels affect tunneling of the potassium ions whereas the effects of thermal fluctuations are negligible under high external force fields. Since the electric current conductivity increases when potassium ions are inserted into fullerenes or carbon nanotubes, the field effect due to the gate, which can modify the position of the potassium ions, changes the tunneling current between the drain and the source.

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Percolation threshold and piezoresistive response of multi-wall carbon nanotube/cement composites

  • Nam, I.W.;Souri, H.;Lee, H.K.
    • Smart Structures and Systems
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    • v.18 no.2
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    • pp.217-231
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    • 2016
  • The present work aims to develop piezoresistive sensors of excellent piezoresistive response attributable to change in nanoscale structures of multi-wall carbon nanotube (MWNT) embedded in cement. MWNT was distributed in a cement matrix by means of polymer wrapping method in tandem with the ultrasonication process. DC conductivity of the prepared samples exhibited the electrical percolation behavior and therefore the dispersion method adopted in this study was deemed effective. The integrity of piezoresistive response of the sensors was assessed in terms of stability, the maximum electrical resistance change rate, and sensitivity. A composite sensor with MWNT 0.2 wt.% showed the lowest stability and sensitivity, while the maximum electrical resistance change rate exhibited by this sample was the highest (96 %) among others and even higher than those found in the literature. This observation was presumably attributed by the percolation threshold and the tunneling effect. As a result of the MWNT content (0.2 wt.%) of the sensor being near the percolation threshold (0.25 wt.%), MWNTs were close to each other to trigger tunneling in response of external loading. The sensor with MWNT 0.2 wt.% was able to maintain the repeatable sensing capability while sustaining a vehicular loading on road, demonstrating the feasibility in traffic flow sensing application.

Field emission characteristics of carbon nanotubes under residual gases

  • Lee, Han-Sung;Jang, Eun-Soo;Goak, Jeung-Choon;Choi, Young-Chul;Lee, Nae-Sung
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1539-1540
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    • 2008
  • The field degradation of carbon nanotube field emitters in diode emission at constant current was demonstrated to be highly dependent upon the presence of residual gases at partial pressures. Upon exposure to a higher pressure of oxygen containing gases, for example, $O_2$ and CO increased the voltage. Those gases give rise to chemical etching to CNTs emitters. On the contrary, $CH_4$ affected the emission properties in the opposite direction as decreasing the voltage which was probably attributed to the introduction of adsorbate tunneling states. The mixed gas may cause a combined effect of both adsorbate tunneling states and CNT etching.

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Distinct Mechanisms of DNA Sensing Based on N-Doped Carbon Nanotubes with Enhanced Conductance and Chemical Selectivity

  • Kim, Han Seul;Lee, Seung Jin;Kim, Yong-Hoon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.415.1-415.1
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    • 2014
  • Carrying out first-principles calculations, we study N-doped capped carbon nanotube (CNT) electrodes applied to DNA sequencing. While we obtain for the face-on nucleobase junction configurations a conventional conductance ordering where the largest signal results from guanine according to its high highest occupied molecular orbital (HOMO) level, we extract for the edge-on counterparts a distinct conductance ordering where the low-HOMO thymine provides the largest signal. The edge-on mode is shown to operate based on a novel molecular sensing mechanism that reflects the chemical connectivity between N-doped CNT caps that can act both as electron donors and electron acceptors and DNA functional groups that include the hyperconjugated thymine methyl group[1].

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Effects of Materials Composition in CNT Paste on Field Emission Properties in Carbon Nanotube Cathodes (인쇄용 페이스트의 조성변화가 탄소나노튜브 캐소드의 전계방출 특성에 미치는 영향)

  • Choi, Woo-Suk;Shin, Heo-Young;Kim, Dong-Hee;Ahn, Byung-Gun;Chung, Won-Sub;Lee, Dong-Gu;Cho, Young-Rea
    • Korean Journal of Materials Research
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    • v.13 no.10
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    • pp.663-667
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    • 2003
  • The effects of paste materials on field emission properties in a carbon nanotube(CNT) cathode were investigated for high-efficient field emission displays. The major components in CNT paste for screen printing were a metallic Ag-paste, a dielectric glass-frit and CNT ink. The emission current from the cathode by an electron tunneling effect increased with an increase in the dielectric material fraction in the CNT paste, which is related to an increase of field enhancement factor in Fowler-Nordheim equation. The surface treatment used, after soft baking of the screen-printed CNT films, greatly affected the decrease in the turn-on field in CNT cathode and the uniformity of emission sites over the entire CNT film area.