• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2016년도 추계학술대회
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• pp.611-613
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• 2016

TCAD 시뮬레이션을 이용하여 소스영역으로 오버랩된(overlapped) 게이트를 가진 터널링 전계효과 트랜지스터(Tunnel Field-Effect Transistor; TFET)의 오버랩된 게이트 길이에 따른 터널링 전류 특성을 조사하였다. 터널링은 크게 라인터널링과 포인트 터널링으로 구분되는데, 라인터널링이 포인트터널링보다 subthreshold swing(SS), on-current에서 더 높은 성능을 보인다. 본 논문은 Silicon, Germanium, Si-Ge Hetero TFET구조에서 게이트 길이를 소스영역으로 오버랩될 경우에 포인트 터널링과 라인터널링의 효과를 조사해서 SS와 on-current에 최적합한 구조의 가이드라인을 제시한다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.635-640
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• 2016

Tunnel field-effect transistor (TFET) is a promising candidate for the next-generation electron device. However, technical issues remain for their practical application: poor current drivability, shor-tchannel effect and ambipolar behavior. We propose herein a novel recessed-channel TFET (RTFET) with the asymmetric source and drain. The specific design parameters are determined by technology computer-aided design (TCAD) simulation for high on-current and low S. The designed RTFET provides ${\sim}446{\times}$ higher on-current than a conventional planar TFET. And, its average value of the S is 63 mV/dec.

• International Journal of Naval Architecture and Ocean Engineering
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• 제13권1호
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• pp.889-901
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• 2021

The tension of cables and motion response significantly affect safety of an immersed tunnel element in the immersion process. To investigate those, a hydrodynamic scale-model test was carried out and the model experiments was conducted under wind, current and wave loads simultaneously. The immersion standby (the process that the position of the immersed tunnel element should be located before the immersion process) and immersion process conditions have been conducted and illustrated. At the immersion standby conditions, the maximum force of the cables and motion is much larger at the side of incoming wind, wave and current, the maximum force of Element-6 (6 cables directly tie on the element) is larger than for Pontoon-8 (8 cables tie on pontoon of the element), and the flexible connection can reduce the maximum force of the mooring cables and motion of element (i.e. sway is expecting to decrease approximate 40%). The maximum force of the mooring cables increases with the increase of current speed, wave height, and water depth. The motion of immersed tunnel element increases with increase of wave height and water depth, and the current speed had little effect on it. At the immersion process condition, the maximum force of the cables decrease with the increase of immersion depth, and dramatically increase with the increase of wave height (i.e. the tension of cable F4 of pontoons at wave height of 1.5 m (83.3t) is approximately four times that at wave height of 0.8 m). The current speed has no much effect on the maximum force of the cables. The weight has little effect on the maximum force of the mooring cables, and the maximum force of hoisting cables increase with the increase of weight. The maximum value of six-freedom motion amplitude of the immersed tunnel element decreases with the increase of immersion depth, increase with the increase of current speed and wave height (i.e. the roll motion at wave height of 1.5 m is two times that at wave height of 0.8 m). The weight has little effect on the maximum motion amplitude of the immersed tunnel element. The results are significant for the immersion safety of element in engineering practical construction process.

• 대한기계학회논문집B
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• 제23권1호
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• pp.58-68
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• 1999

The entry compression wave, which forms at the entrance of a high-speed railway tunnel, is closely related to the pressure transients in the train/tunnel systems as well as an impulsive noise appearing at the exit of the tunnel. In order to alleviate such undesirable phenomena, some control strategies have been applied to the compression wave propagating inside the tunnel. The objective of the current work is to investigate the effect of tunnel entrance hoods on the entry compression wave at the vicinity of the tunnel entrance. Three types of entrance hoods were tested by the numerical method using the characteristics of method for a wide range of train speeds. The results show that the maximum pressure gradient of compression wave can be considerably reduced by the tunnel entrance hood. Optimum hood shape necessary to reduce the pressure transients and impulsive noise was found to be of an abrupt type hood with its cross-sectional area 2.5 times the tunnel area. It is believed that the current results are highly useful in predicting the effects of entrance hoods and in choosing the shape of proper hood.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2016년도 춘계학술대회
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• pp.160-162
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• 2016

A compact model of tunnel field effect transistor (TFET) has been developed. The model includes a surface potentia calculation module and a band-to-band-tunneling current module. Model comparison with TCAD shows that the mode calculates TFET surface potential and drain current accurately.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2016년도 추계학술대회
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• pp.616-618
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• 2016

TCAD 시뮬레이션을 이용하여 터널링 전계효과 트랜지스터(Tunnel Field-Effect Transistor; TFET) 구조에 따른 특성을 조사하였다. Single-Gate TFET, Double-Gate TFET, Pocket TFET, L-shaped TFET 구조 중에서 Pocket TFET와 L-shaped TFET이 on-current와 subthreshold swing에서 가장 좋은 성능을 보였다. 본 논문은 터널링 전계효과 트랜지스터의 새로운 구조에 대한 가이드라인을 제시하고자 한다.

• Journal of Electrical Engineering and Technology
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• 제8권6호
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• pp.1481-1486
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• 2013

In this paper, a new two dimensional (2D) analytical model of a Dual Material Gate tunnel field effect transistor (DMG TFET) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expressions for surface potential and electric field are derived. The electric field distribution can be used to calculate the tunneling generation rate and numerically extract tunneling current. The results show a significant improvement of on-current and reduction in short channel effects. Effectiveness of the proposed method has been confirmed by comparing the analytical results with the TCAD simulation results.

• Journal of Electrical Engineering and Technology
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• 제9권1호
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• pp.247-253
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• 2014

In this paper, a new two dimensional (2D) analytical modeling and simulation for a Dual Material Double Gate tunnel field effect transistor (DMDG TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surface potential and electric field are derived. This electric field distribution is further used to calculate the tunnelling generation rate and thus we numerically extract the tunnelling current. The results show a significant improvement in on-current characteristics while short channel effects are greatly reduced. Effectiveness of the proposed model has been confirmed by comparing the analytical results with the TCAD simulation results.

• 한국철도학회:학술대회논문집
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• 한국철도학회 1998년도 창립기념 춘계학술대회 논문집
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• pp.596-603
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• 1998

The entry compression wave, which is generated at the entrance of the tunnel, is almost always associated with the pressure transients in the tunnel as well as the impulse noise at the exit of the tunnel. It is highly required to design the train nose shape that can minimize such undesirable phenomena. The objective of the current work is to investigate the effects of the train nose shape on the entry compression wave. Numerical computations were applied to one-dimensional unsteady compressible flow in high-speed railway train/tunnel systems. A various shape of train noses were tested for a wide range of train speeds. The results showed that the strength of the entry compression wave is not influenced by the train nose shape, but the time variation of pressure in the entry compression wavefront is strongly related to the train nose shape. The current method of the characteristics was able to represent a desirable nose shape for various train speeds. Optimum nose shape was found to considerably reduce the maximum pressure gradient of the entry compression wave.

• E2M - 전기 전자와 첨단 소재
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• 제7권6호
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• pp.473-480
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• 1994

The electron tunnel effect in polvimide LB films sandwiched between metal electrodes has been investigated in the present work by a study of both the elastic and inelastic tunneling components. By the results of elastic tunneling experiments in Au/Pl/Au tunneling junction, we can judge the height and thickness of tunnel barrier. The inelastic current in Inelastic Electron Tunneling Spectroscopy(IETS) is due to the interaction of the tunneling electron with the vibrational modes of the molecular species in the barrier. Measurements are done on Au/PI/Pb tunneling junctions. The spectra obtained are the second derivatives of the current-voltage characteristics of these junctions : specifically, d$^{2}$1/dV$^{2}$ as a function of voltage V. Because the energies measured by IETS can be directly compared to those measured by infrared and Raman spectroscopy, IR-RAS spectroscopy also measured for reference.