Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Compact Model of Tunnel Field-Effect-Transistors

  • Najam, Faraz (Department of Electrical, Electronic and Control Engineering and IITC, Hankyong National University) ;
  • Yu, Yun Seop (Department of Electrical, Electronic and Control Engineering and IITC, Hankyong National University)
  • Published : 2016.05.25
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Abstract

A compact model of tunnel field effect transistor (TFET) has been developed. The model includes a surface potentia calculation module and a band-to-band-tunneling current module. Model comparison with TCAD shows that the mode calculates TFET surface potential and drain current accurately.

Keywords

Acknowledgement

Supported by : KSRC(Korea Semiconductor Research Consortium)