• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.89-92
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• 2004

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.25 no.10
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• pp.1535-1540
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• 2001

This study presents the possibility of scratch reduction on wafer in CMP by applying the ultrasonic and megasonic energy into the slurry which might contain large abrasive particles. Experiments were conducted to verify the dispersion ability of agglomerated particles by applying ultrasonic, megasonic waves and analyze the particle distribution of used slurry in case, of sonic energy assisted or none. And the dispersion stability of megasonic waves was investigated through the experiment of stability of the dispersed slurry, Finally, to confirm that the distribution of particles in slurry by ultrasonic waves was actually related to scratches on wafer when CMP was done, tungsten blanket wafer was processed, by CMP to compare and investigate scratches on wafer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1296-1300
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• 2004

SnO$_2$ is one of the most suitable gas sensor materials. The microstructure and surface morphology of films must be controlled because the electrical and optical properties of SnO$_2$ films depend on these characteristics. The effects of chemical mechanical polishing(CMP) on the variation of morphology of SnO$_2$ films prepared by RF sputtering system were investigated. The commercially developed ceria-based oxide slurry, silica-based oxide slurry, and alumina-based tungsten slurry were used as CMP slurry. Non-uniformities of all slurries met stability standards of less than 5 %. Silica slurry had the highest removal rate among three different slurries, sufficient thin film topographies and suitable root mean square(RMS) values.

• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.603-604
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• 2006

We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. According to the CMP removal rates and particle size distribution, and the micro- structures of surface layer as a function of oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_{2}O_3$ abrasive particles in CMP slurry.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.12
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• pp.76-82
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• 1997

Chemical mechanical polishing (CMP) has become widely accepted for the planarization of multi-interconnect structures in semiconductor manufacturing. However, perfect planarization is not so easily ahieved because it depends on the pattern sensitivity, the large number of controllable process parameters, and the absence of a reliable process model, etc. In this paper, we realized the planarization of deposited oxide layers followed by metal (W) polishing as a replacement for tungsten etch-back process for via formation. Atomic force microscope (AFM) is used for the evaluation of pattern topography during CMP. As a result, AFM evaluation is very attractive compared to conventional methods for the measurment of planarity. mOreover, it will contribute to analyze planarization characteristics and establish CMP model.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1269-1270
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• 2006

We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. According to the CMP removal rates and particle size distribution, and the micro-structures of surface layer as a function of oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_2O_3$ abrasive particles in CMP slurry.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1729-1730
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• 2006

We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. According to the CMP removal rates and particle size distribution, and the micro-structures of surface layer as a function of oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_{2}O_{3}$ abrasive particles in CMP slurry.

• Transactions on Electrical and Electronic Materials
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• v.7 no.3
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• pp.108-111
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• 2006

The oxidizer-induced corrosion state and microstructure of surface passive metal-oxide layer greatly influenced on the removal rate of tungsten film according to the slurry chemical composition of different mixed oxidizers. In this paper, the actual polishing mechanism and pH-potential equilibrium diagram obtained from potentiodynamic polarization curve were electrochemically compared. An electrochemical corrosion effect implies that slurries with the highest removal rate (RR) have the high dissolution rate.

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.18.1-18.1
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• 2006

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.17-21
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• 2011

Copper (Cu) had been attractive material due to its superior properties comparing to other metals such as aluminum or tungsten and considered as the best metal which can replace them as an interconnect metal in integrated circuits. CMP (Chemical Mechanical Polishing) technology enabled the production of excellent local and global planarization of microelectronic materials, which allow high resolution of photolithography process. Cu CMP is a complex removal process performed by chemical reaction and mechanical abrasion, which can make defects of its own such as a scratch, particle and dishing. The abrasive particles remain on the Cu surface, and become contaminations to make device yield and performance deteriorate. To remove the particle, buffing cleaning method used in post-CMP cleaning and buffing is the one of the most effective physical cleaning process. AE(Acoustic Emission) sensor was used to detect dynamic friction during the buffing process. When polishing is started, the sensor starts to be loaded and produces an electrical charge that is directly proportional to the applied force. Cleaning efficiency of Cu surface were measured by FE-SEM and AFM during the buffing process. The experimental result showed that particles removed with buffing process, it is possible to detect the particle removal efficiency through obtained signal by the AE sensor.