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A Study on CMP Properties of SnO2 Thin Film for Application of Gas Sensor

가스센서 적용을 위한 SnO2 박막의 CMP 특성 연구

  • 이우선 (조선대학교 전기공학과) ;
  • 최권우 (조선대학교 전기공학과) ;
  • 김남훈 (조선대학교 에너지자원신기술연구소) ;
  • 박진성 (조선대학교 신소재공학과) ;
  • 서용진 (대불대학교 전기전자공학과)
  • Published : 2004.12.01

Abstract

SnO$_2$ is one of the most suitable gas sensor materials. The microstructure and surface morphology of films must be controlled because the electrical and optical properties of SnO$_2$ films depend on these characteristics. The effects of chemical mechanical polishing(CMP) on the variation of morphology of SnO$_2$ films prepared by RF sputtering system were investigated. The commercially developed ceria-based oxide slurry, silica-based oxide slurry, and alumina-based tungsten slurry were used as CMP slurry. Non-uniformities of all slurries met stability standards of less than 5 %. Silica slurry had the highest removal rate among three different slurries, sufficient thin film topographies and suitable root mean square(RMS) values.

Keywords

References

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