• Korean Journal of Materials Research
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• v.1 no.4
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• pp.177-183
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• 1991

Change of the properties of selective CVD-W by $SiH_4$ reduction with the variation of deposition time and pressure has been investigated. The lime required for covering the who)to Si substrate by tungsten at $300^{\circ}C$ under the pressure of 100mtorr is approximately 30 seconds. The film thickness tends to increase linearly in the early stage of deposition process and parabolically later, sheer resistance of the film tends to decrease rapidly initially, and slowly later with deposition time. Tungsten grain size does not change much, but grain boundary becomes hazy in the pressure range of 50-300mtorr. Also no ${\beta}-W$ but only ${\alpha}-W$ was found in this pressure range. The deposition rate and electrical resistivity of tungsten tend to increase wish increasing pressure. The results of AES analysis show that pressure does not much affect Si/W ratio of the tungsten film and silicidation at the W/Si interface.

• Journal of the Korean institute of surface engineering
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• v.30 no.6
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• pp.374-381
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• 1997

We have studied the effect of the interface between tungsten silicide and polysilicon the silicide reaction. The results showed that the cleaning of the silicon surface prior to the deposition of tungsten silicide affected the interface properties, thereby leading to the difference in the resistivity and surface morhpology of tungsten silicide. Compared with HF cleaning, the use of SCl cleaning yielded higher resistivity of tungsten silicide at the low anneal temperature (up to $900^{\circ}C$). However, furtherature to $1000^{\circ}C$ reduced the resistivity significantly, similar to that obtained with HF cleaning. It was also observed that the annealing of WSix/HF-cleaned poly-si allowed the formation of bucking weve (partially decohesion area) on the surface. In contrast, the use of SCl celaning did not produce the buckling waves on the surface. Also the presence of 200$\AA$ -thick TiW between tungsten silicide and HF-cleaned poly-Si effectively prevented the formation of the waves. However, high-temperature annealing of WSix/200A-TiW/Poly-Si allowed the excess silicon in tungsten silicide to precipitate inside the silcide, causing the slight increase of the resistivity after annealing at $1050^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.303-308
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• 2005

In this paper, the effects of oxidants on tungsten chemical mechanical polishing (CMP) process were investigated using three different oxidizers such as Fe(NO₃)₃, KIO₃ and H₂O₂. Moreover, the interaction between the tungsten film and the oxidizer was discussed by potentiodynamic polarization measurement with three different oxidizers, in order to compare the effects of W-CMP and electrochemical characteristics on the tungsten film as a function of oxidizer. As an experimental result, the tungsten removal rate reached a maximum at 5 wt％ Fe(NO₃)₃concentration, and when 5 wt％ H₂O₂was added in the slurry, the removal rate of W increased. Also, the microstructures of surface layer by atomic force microscopy(AFM) image were greatly influenced by the slurry chemical composition of oxidizers. It was shown that the surface roughness and removal rate of the polished surface were improved in Fe(NO₃)₃than KIO₃. The electrochemical results indicate that the corrosion current density of the 5 wt％ H₂O₂ and 5 wt％ H₂O/sub 2+/＋ 5 wt％ Fe(NO₃)₃was higher than the other oxidizers. Therefore, we conclude that the W-CMP characteristics are strongly dependent on the kinds of oxidizers and the amounts of oxidizer additive.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.5
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• pp.689-695
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• 2002

Film compositions are needed in semiconductor manufacturing for such diverse application as production tool qualifications and process development. Surface and interface information is generally provided with Auger electron spectroscopy(AES). In this paper, WSix films were analyzed for structural, electrical, and compositional properties of tungsten silicide thin films produced by low pressure chemical vapor deposition as a function of temperature, DCS post flow, shower head life time, and the silicon to tungsten ratios have been investigated. We find that Si/W composition ratio is increased in the surface and interface of WSix thin films by the DCS post flow process and increasing deposition temperature, respectively. The results obtained in this study are also applicable to process control of WSix deposition for memory device fabrication.

• Nuclear Engineering and Technology
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• v.56 no.6
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• pp.2141-2152
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• 2024

Tungsten is the most promising plasma facing material for fusion reactors. Rolled W-Y₂(Zr)O₃ bulk material has been successfully produced in this study for future fusion engineering applications. The introduction of Zr is conducive to the refinement of the second phase particles. Nano-sized Y-Zr-O particles are observed in the powder and bulk samples. Related results show that the Y-Zr-O particle dispersion distribution improves the heat load resistance of W-Y₂(Zr)O₃ composite material. For four-point bend experiments in the same sampling direction, the DBTT of W-Y₂(Zr)O₃ composite materials is lower compared to the pure tungsten. For the same material, the DBTT of the material was selected for testing along the RD direction is lower compared to the material was selected for testing along the TD direction. Findings of this study provide suggestions for the subsequent industrial preparation of nanoscale particle-doped tungsten materials.

• Korean Journal of Materials Research
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• v.26 no.9
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• pp.486-492
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• 2016

Tungsten (W) thin film was deposited at $400^{\circ}C$ using pulsed chemical vapor deposition (pulsed CVD); film was then evaluated as a nucleation layer for W-plug deposition at the contact, with an ultrahigh aspect ratio of about 14~15 (top opening diameter: 240~250 nm, bottom diameter: 98~100 nm) for dynamic random access memory. The deposition stage of pulsed CVD has four steps resulting in one deposition cycle: (1) Reaction of $WF_6$ with $SiH_4$. (2) Inert gas purge. (3) $SiH_4$ exposure without $WF_6$ supply. (4) Inert gas purge while conventional CVD consists of the continuous reaction of $WF_6$ and $SiH_4$. The pulsed CVD-W film showed better conformality at contacts compared to that of conventional CVD-W nucleation layer. It was found that resistivities of films deposited by pulsed CVD were closely related with the phases formed and with the microstructure, as characterized by the grain size. A lower contact resistance was obtained by using pulsed CVD-W film as a nucleation layer compared to that of the conventional CVD-W nucleation layer, even though the former has a higher resistivity (${\sim}100{\mu}{\Omega}-cm$) than that of the latter (${\sim}25{\mu}{\Omega}-cm$). The plan-view scanning electron microscopy images after focused ion beam milling showed that the lower contact resistance of the pulsed CVD-W based W-plug fill scheme was mainly due to its better plug filling capability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.87-88
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• 2007

반도체 소자가 초고집적화 되어감에 따라 반도체 공정에서 선폭은 줄어들고 박막은 다층화 되어가고 있다. 이와 같은 제조 공정 하에서는 Si 기판과 금속 박막간의 확산이 커다란 문제로 부각되어 왔다. 특히 Cu는 높은 확산성에 의하여 Si 기판과 접합에서 많은 확산에 의한 문제가 발생하게 되며, 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이러한 확산을 방지하기 위하여 이 논문에서는 Tungsten - Carbon - Nitrogen (W-C-N)에 Boron (B)을 첨가하였고, Boron 타겟 power을 조절하여 다양한 조성을 가지는 W-B-C-N 확산방지막을 제작하여 각 조성에 따른 증착률을 조서하였고 $1000^{\circ}C$까지 열처리하여 그 비저항을 측정하여 각 특성을 확인하였다.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1159-1168
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• 1994

We powders were synthesized from W powders in differnet particle sizes by Self-propagating High-temperature Synthesis process (SHS) using a chemical furnace. The effects of the mole ratio of chemical fuel content, pellet thickness and the mole ratio between carbon and tungsten (C/W Ratio) on synthesis were investigated with the tungsten powders have different particle size each other. Compositional and structural characterization of these powders was carried out by scanning electron microscope (SEM0 and x-ray diffractometer. Powder characterization was carried out by the measurement of particle size distribution with laser-particle size analyzer. The amounts of WC obtained by SHS process depend very much on the particle size of tungsten powder and heat contents given in a product, i.e. as the particle size of W powder is smaller, the amounts of WC produced increase. Also the more heat contents is given, the more amounts of WC increase. By optimizing the synthesis conditions, it is possible to fabricate WC powders which have little secondary phases (W2C, C).

• Journal of the Korean Ceramic Society
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• v.33 no.1
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• pp.83-91
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• 1996

Monolithic AlN and AlN-W composites were fabricated by pressure-less sintering at 190$0^{\circ}C$ under nitrogen atmosphere and the influences of tungsten phase on the microstructure and mechanical properties were investi-gated. In the fabrication of sintered specimen no additive was used. And monolithic AlN showed substantial grain growth and low relative density. AlN-W composites were fully densified and grain growths of matrix were inhibited. The densification behavior of composites were inferred to be achieved through the liquid phase sintering process such as particle-rearrangement and solutino-reprecipitation. Also the oxid phases which is expected to form liquid phases duringsintering process were detected by XRD analysis. As the tungsten volume content increases fracture strength was decreased and fracture toughness was increased. It was suppo-sed that the strength decrease of composites with tungsten content was due to existence of interface phases. The subcritical crack growth behavior was observed from the stress-strain curve of composites. The effect of the secondary phase and interface phases on toughness in crease were studied through observation of crack propagation path and the influence of residual stress on crack propagation was investigated by X-ray residual stress measurement. In the result of residual stress measurement the compressive stress of matrix in composi-test was increased with tungsten volume content and the compressive stress distribution of matrix must have contributed to the inhibition of crack propagation.

• Bulletin of the Korean Chemical Society
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• v.30 no.1
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• pp.133-136
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• 2009

A newly designed Ag/$Ag^+$ reference electrode in a quartz tube with a tungsten tip junction (W-tip-Quartz- REF) was fabricated and its electrochemical performance was compared with a conventional Pyrex tube-based Ag/$Ag^+$ reference electrode (Py-REF). The results of the electrochemical potential measurements with the W-tip-Quartz- REF and the Py-REF in the LiCl-KCl eutectic melts for a wide temperature range proved that the oxide layer on the surface of the tungsten metal tip provided a high ionic conduction. Stability of our newly designed W-tip- Quartz-REF was tested by measuring a junction potential for 12 hours at 700${^{\circ}C}$. The results of the cyclic voltammetric measurement indicated that the Ag/$Ag^+$ reference electrode in the quartz tube with a tungsten tip junction can provide a good performance for a wide temperature range.