• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.640-643
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• 2008

In this work, a novel tunable MIM capacitor with the meshed electrode is proposed first in order to improve the tunability characteristics using fringe fields. The capacitors were fabricated on a low-resistivity Si substrate employing lead zinc niobate (PZN) thin film dielectric. The fabricated capacitor with the meshed electrode, whose line width and spacing was $2.5{\mu}m$, achieved the effective capacitance tunability of 31 % that is higher value of 18.5 % than that of the conventional capacitor with the rectangular-type electrode.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.586-589
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• 2012

In this paper, a tunable capacitor like an interdigital one is presented for low-voltage applications. In order to reduce operation voltage by enhancing fringing electric fields, two finger-patterned electrodes are vertically separated by employing a multi-layer thin film dielectric of a para-/ferro-/para-electrics without spacing between electrodes. The proposed tunable capacitor was fabricated on a quartz wafer and its characteristics are analyzed in terms of effective capacitance and tunability with a function of applied voltages, compared to the conventional interdigital capacitor (IDC). At 8V and 2 GHz, the proposed tunable capacitor shows the tunability of 18 % that is 10.3 % higher than that of the compared one.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.1
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• pp.15-21
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• 2013

In this paper, a MEMS tunable capacitor was successfully designed and fabricated using an aluminum nitride film and a gold suspended membrane with two air gap structure for commercial RF applications. Unlike conventional two-parallel-plate tunable capacitors, the proposed tunable capacitor consists of one air suspended top electrode and two fixed bottom electrodes. One fixed and the top movable electrodes form a variable capacitor, while the other one provides necessary electrostatic actuation. The fabricated tunable capacitor exhibited a capacitance tuning range of 375% at 2 GHz, exceeding the theoretical limit of conventional two-parallel-plate tunable capacitors. In case of the contact state, the maximal quality factor was approximately 25 at 1.5 GHz. The developed fabrication process is also compatible with the existing standard IC (integrated circuit) technology, which makes it suitable for on chip intelligent transceivers and radios.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.9 s.112
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• pp.860-865
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• 2006

In this paper, a novel tunable inter-digital capacitor using dielectric tunable $Bi_2O_3-ZnO-Nb_2O_5(BZN)$ pyrochlore thin films is proposed. In order to improve the tunability and reduce DC bias voltage using the fringing electric field, the electrodes of the inter-digital capacitor are embedded in the thin film. Designed results using a 2.5 D simulator show that the tunability of the proposed inter-digital capacitor improves by 10 %, compared to the conventional inter-digital capacitor. The proposed IDC, which is based on the simulation results, was fabricated, using the BZN thin film deposited by a reactive RF magnetron sputtering on the on the silicon substrate. The fabricated inter-digital capacitor shows the maximum tunability of 50 % at 5.8 GHz and 18 V DC applied.

• Journal of Advanced Navigation Technology
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• v.16 no.6
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• pp.1038-1043
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• 2012

In this work, a high tunable capacitor using a multi-layer dielectric of BZN/BST/BZN is designed and characterized for reconfigurable RF applications. By utilizing a high tunable BST ferroelectric and a low-loss BZN paraelectric thin film, a multi-layer dielectric of BZN/BST/BZN obtained a tunability of 47 % and $tan{\delta}$ of 0.005. The fabricated tunable capacitor on a quartz wafer using this multi-layer dielectric achieved a Q-factor of 10 and tunability of 60 % at 800 MHz and 15 V. Its size is $327{\times}642{\mu}m2$.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.2 no.4
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• pp.59-64
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• 2009

In this paper, we represent characteristics and equivalent circuit of donut type resonator of defected ground structure (DGS), and can control resonant frequency with chip capacitor. In General, DGS operates like with parallel LC resonator. We found out variation of resonance frequency when capacitor is placed on slot of DGS. If the chip capacitor replace with varactor diode, the resonance frequencies can be controlled by voltage. This tualable resonator can apply to voltage controlled oscillator and tunable bandpass filter.

• ETRI Journal
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• v.37 no.5
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• pp.972-978
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• 2015

This paper proposes an accurate tunable-gain 1/x circuit. The output voltage of the 1/x circuit is generated by using a capacitor charging time that is inversely proportional to the input voltage. The output voltage is independent of the process parameters, because the output voltage depends on the ratios of the capacitors, resistors, and current mirrors. The voltage gain of the 1/x circuit is tuned by a 10-bit digital code. The 1/x circuit was fabricated using a $0.18{\mu}m$ CMOS process. Its core area is $0.011mm^2$ ($144{\mu}m{\times}78{\mu}m$), and it consumes $278{\mu}W$ at $V_{DD}=1.8V$ and $f_{CLK}=1MHz$. Its error is within 1.7% at $V_{IN}=0.05V$ to 1 V.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.62-64
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• 2001

In this paper, we present the fabrication and performance of tunable capacitors with various structural geometry of plates. Experimental devices have been fabricated using Cu-electroplating techniques and standard MEMS techniques. In particular, the thickness of electroplated Cu is designed below $0.5{\mu}m$ for lower actuation voltage. The fabricated tunable capacitors has been tested from $OV{\sim}42V$ and achieves a tuning ratio of $46%{\sim}64.2%$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.561-563
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• 2012

In this work, tunable capacitors using a finger-type electrode are designed and characterized for frequency-agile RF circuit applications. Their top electrodes with different area and line width are designed in types of the finger for a long conducting perimeter which results in enhanced fringing-electric fields in order to improve their tunability. The tunable varactors were fabricated on a quartz substrate employing a multi-layer dielectric of a para/ferro/para-electric thin film. Compared to the conventional capacitor, finger-type capacitors are characterized in terms of effective capacitance and tunablility. Their effective capacitance and tunability with the long perimeter increase 24~40% and 7~12%, respectively, due to enhanced fringing electric fields from 1 to 2.5 GHz, compared to the conventional ones.

• Journal of IKEEE
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• v.22 no.3
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• pp.780-785
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• 2018

In this work, We investigated the frequency-dependent capacitance tunability of a metal-ferroelectric-metal variable capacitor fabricated using ALD $HfO_2$ ferroelectric material. The capacitance of the MFM capacitor could be tuned as a function of the bias voltage, up to the microwave frequency range. We observed a capacitance tuning range of ~3 % up to 2.5 GHz, proving the feasibility of the use of ALD $HfO_2$ in the microwave frequency band.