Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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Study on the Ferroelectric Properties of ALD-HfO2 in Microwave Band for Tunable RF Apparatus

Tunable RF 기기 적용을 위한 ALD-HfO2의 마이크로파 대역 강유전체 특성 고찰

  • Han, Sang-Woo (School of Electronic and Electrical Engineering, Hongik University) ;
  • Lee, Chang-Hyun (School of Electronic and Electrical Engineering, Hongik University) ;
  • Lee, Jeong-Hae (School of Electronic and Electrical Engineering, Hongik University) ;
  • Cha, Ho-Young (School of Electronic and Electrical Engineering, Hongik University)
  • Received : 2018.09.07
  • Accepted : 2018.09.21
  • Published : 2018.09.30
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Abstract

In this work, We investigated the frequency-dependent capacitance tunability of a metal-ferroelectric-metal variable capacitor fabricated using ALD $HfO_2$ ferroelectric material. The capacitance of the MFM capacitor could be tuned as a function of the bias voltage, up to the microwave frequency range. We observed a capacitance tuning range of ~3 % up to 2.5 GHz, proving the feasibility of the use of ALD $HfO_2$ in the microwave frequency band.

본 논문에서는 tunable RF 기기에 적용이 가능한 $HfO_2$ 강유전체를 활용하여 metal-ferroelectric-metal (MFM) 커패시터를 구현하였으며 마이크로파 대역주파수 까지 전압에 따른 커패시턴스 tunability 특성을 고찰 하였다. 1kHz부터 5GHz 대역에 이르기까지 광범위한 범위의 커패시턴스-전압 특성을 분석하였으며 커패시턴스 tunability는 500 MHz 이상의 주파수에서 2.5 GHz 대역까지 ~3 %의 tunability가 유지되는 것을 확인 하여 마이크로파 주파수 대역에서 ALD $HfO_2$기반 전자 제어 가변 커패시터의 사용 가능성을 입증하였다.

Keywords

References

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