• Title/Summary/Keyword: Trapping characteristics

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The characteristics of ceramic filter using energy trapping effect (에너지 트래핑 효과를 이용한 세라믹 필터의 특성에 관한 연구)

  • 박기엽;김원석;송준태
    • Electrical & Electronic Materials
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    • v.8 no.2
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    • pp.144-150
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    • 1995
  • Ceramic filter using energy trapping effect is used bandpass filter at high frequency. In this paper, the resonant points of the symmetrical modes and antisymmetrical modes were theoretically analyed and synthesized these modes in order to know the filter characteristics. We simulated them using the computer and also fabricated the ceramic filter using PZT-4 piezoelectric plate made by Valpey Fisher Co., The 1.5[.mu.m] - thick platinum electrode were deposited on the ceramic plates with the various masks. The characteristics of the fabricated filters were measured using the spectrum analyzer. Experimental data were compared with the theoretical results. The maximum-pass frequencies coinsided exactly. The bandwidths of the fabricated filters were slightly different between theoretical and experimental results. We found that these phenomenon were caused by the stray capacitance between the two neighbor electrodes..

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Analysis of Fin-Type SOHOS Flash Memory using Hafnium Oxide as Trapping Layer (Hafnium Oxide를 Trapping Layer로 적용한 Fin-Type SOHOS 플래시 메모리 특성연구)

  • Park, Jeong-Gyu;Oh, Jae-Sub;Yang, Seung-Dong;Jeong, Kwang-Seok;Kim, Yu-Mi;Yun, Ho-Jin;Han, In-Shik;Lee, Hi-Deok;Lee, Ga-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.6
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    • pp.449-453
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    • 2010
  • In this paper, the electrical characteristics of Fin-type SONOS(silicon-oxide-nitride-oxide-silicon) flash memory device with different trapping layers are analyzed in depth. Two kinds of trapping layers i.e., silicon nitride($Si_3N_4$) and hafnium oxide($HfO_2$) are applied. Compared to the conventional Fin-type SONOS device using the $Si_3N_4$ trapping layer, the Fin-type SOHOS(silicon-oxide-high-k-oxide-silicon) device using the $HfO_2$ trapping layer shows superior program/erase speed. However, the data retention properties in SOHOS device are worse than the SONOS flash memory device. Degraded data retention in the SOHOS device may be attributed to the tunneling leakage current induced by interface trap states, which are supported by the subthreshold slope and low frequency noise characteristics.

Study on the Structural Stability and Charge Trapping Properties of High-k HfO2 and HFO2/Al2O3/HfO2 Stacks (High-k HfO2와 HfO2/Al2O3/HfO2 적층막의 구조 안정성 및 전하 트랩핑 특성 연구)

  • Ahn, Young-Soo;Huh, Min-Young;Kang, Hae-Yoon;Sohn, Hyunchul
    • Korean Journal of Metals and Materials
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    • v.48 no.3
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    • pp.256-261
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    • 2010
  • In this work, high-k dielectric stacks of $HfO_2$ and $HfO_2$/$Al_2O_3$/$HfO_2$ (HAH) were deposited on $SiO_2/Si$ substrates by atomic layer deposition as charge trapping layers in charge trapping devices. The structural stability and the charge trapping characteristics of such stacks were investigated using Metal-Alumina-Hafnia-Oxide-Silicon (MAHOS) structure. The surface roughness of $HfO_2$ was stable up to 11 nm with the insertion of 0.2 nm thick $Al_2O_3$. The effect of the thickness of the HAH stack and the thickness of intermediate $Al_2O_3$ on charge trapping characteristics were investigated for MAHOS structure under various gate bias pulse with duration of 100 ms. The threshold voltage shift after programming and erase showed that the memory window was increased with increasing bias on gate. However, the programming window was independent of the thickness of HAH charge trapping layers. When the thickness of $Al_2O_3$insertion increased from 0.2 nm to 1 nm, the erase window was decreased without change in the programming window.

Study of the Hole Trapping in the Gate Oxide due to the Metal Antenna Effect (Metal Antenna 효과로 인한 게이트 산화막에서 정공 포획에 관한 연구)

  • 김병일;이재호;신봉조;이형규;박근형
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.3
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    • pp.34-40
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    • 1999
  • Recently, the gate oxide damage induced by the plasma processes has been one of the most significant reliability issues as the gate oxide thickness falls below 10 nm. The plasma-induced damage was studied with the metal antenna test structures. In addition to the electron trapping, the hole trapping in a 10 nm thick gate oxide due to the plasma-induced charging was observed in the NMOS's with a metal antenna. The hole trapping caused the transconductance (gm) to be reduced like the case of the electron trapping, but to the extent much less than the electron trapping. It would be because the electrical stress that the plasma-induced charging forced to the gate oxide for the devices with the hole trapping was much smaller than for those with the electron trapping. This hypothesis was strongly supported by the measured characteristics of the Fowler-Nordheim current in the gate oxide.

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A study on the scavenging characteristics in slow-speed two-stroke diesel engines (저속 2행정 디젤 기관의 소기 특성에 관한 연구)

  • 고대권;최재성
    • Journal of Advanced Marine Engineering and Technology
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    • v.19 no.3
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    • pp.24-32
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    • 1995
  • The scavenging characteristics have a great influence on the performance of a diesel engine, especially slow-speed two-stroke diesel engines which are usually used as a marine propulsion power plant, and they are greatly affected by the conditions in the cylinder, intake and exhaust manifolds, and the opening and closing timing of scavenging ports or exhaust valves during the gas exchange process. Besides, there are many other factors to affect the scavenging characteristics and these factors interact each other very complicatedly. Therefore the simulation program of the gas exchange process is very useful to improve and predict the scavenging characteristics, due to the high costs associated with redesign and testing. In this paper it was attenpted to investigate the effect of the variation of the pressure ratio of intake to exhaust manifolds, and the variation of the opening and closing timing of a exhaust valve by using a computational program for a three-zone scavenging model which was developed by authors. The computed results showed that the scavenging efficiency and delivery ratio increased considerably, but the trapping efficiency decreased with increasing of the pressure ratio of intake to exhaust manifolds. The scavenging efficiency, trapping efficiency, and th conditions of the cylinder gases were affected by the opening timing of the exhaust valve, but the delivery ratio by the closing timing.

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A Study on the Carrier Trapping Model and Trap Characteristics for Nitridation of Oxide (캐리어 트랩핑 모델 및 질화산화막의 트랩특성에 관한 연구)

  • 정양희
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2002.11a
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    • pp.575-578
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    • 2002
  • In this paper, we discuss carrier trapping model and trap characteristics of nitrided oxide thin film. Based on the experimental results, the carrier trapping model for system having multi-traps is proposed and is fitted with experimental data in order to determine trap parameter of nitride oxide and O2 annealed nitrided oxide. As a results of curve fitting, the heavy nitridation of oxide introduces three kinds of traps with capture cross section $\sigma$n1=1.48$\times$10$^{-17}$ $\textrm{cm}^2$, $\sigma$n2=1.51$\times$10$^{-19}$ $\textrm{cm}^2$, $\sigma$p=1.53$\times$10$^{-18}$ $\textrm{cm}^2$ and corresponding trap densities Nnl=2.66$\times$10$^{12}$ Cm$^{-2}$ , Nn2=1.32$\times$10$^{12}$ Cm$^{-2}$ , Np=8.35$\times$10$^{12}$ Cm$^{-2}$ .

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Effects of Composition on the Memory Characteristics of (HfO2)x(Al2O3)1-x Based Charge Trap Nonvolatile Memory

  • Tang, Zhenjie;Ma, Dongwei;Jing, Zhang;Jiang, Yunhong;Wang, Guixia;Zhao, Dongqiu;Li, Rong;Yin, Jiang
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.5
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    • pp.241-244
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    • 2014
  • Charge trap flash memory capacitors incorporating $(HfO_2)_x(Al_2O_3)_{1-x}$ film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found that the memory window and charge retention performance can be improved by adding Al atoms into pure $HfO_2$; further, the memory capacitor with a $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer exhibits optimized memory characteristics even at high temperatures. The results should be attributed to the large band offsets and minimum trap energy levels. Therefore, the $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer may be useful in future nonvolatile flash memory device application.

A study on the resonant frequency of ceramic fitter using energy trapping effect (에너지 트래핑 효과를 이용한 세라믹 필터의 공진주파수에 관한 연구)

  • 박기엽;김원석;송준태
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1994.11a
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    • pp.139-142
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    • 1994
  • Ceramic filter using energy trapping pheonomenon is used bandpass filter at high frequency. In this paper, we analyzed theoretically ceramic filter characteristics of TS vibrational mode and also investigated experimentally it. The ceramic plate is PZT-4 poled in the thickness direction of Valpey Fisher Co. and electroded with two pairs. We analyzed the characteristics in appling to the all constant of ceramic and electrode material each other and vibrational mode. We also measured resonant frequency and bandpass width of the ceramic filter changing the thickness of ceramic plate and electrode spacing. Comparing of falter characteristics, theoretical value nearly corresponded with experimental value. So we saw that we can expect filter characteristics changing the thickness of ceramic plate and electrode spacing.

The characteristics of two-electrod-ceramic filter using energy trapping effect (에너지 트래핑 효과를 이용한 이중전극 세라믹 필터의 특성)

  • Kim, Won-Seok;Park, Gi-Yub;Song, Jun-Tai
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1419-1421
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    • 1994
  • The method of suppression based on the principle of energy trapping effect is very effective at high frequency. In this paper, We intended to get resonant frequency and bandpass filer characteristics in appling to vibration mode of PZT-4 and PZT-8 using trapped energy phenomenon. First, we theoretically analyzed a piezoelectric ceramic filter characteristics changing the thickness of ceramic plate, electrode spacing and distance between the two pairs of electrodes. We also experimentally investigated characteristics of ceramic filter made.

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A study on the degradation by the hot carrier trapping of the submicron MOSFET with long stress condition (장시간 스트레스 조건에서 submicron MOSFET의 열전자 트래핑에 의한 노화현상에 대한 연구)

  • 홍순석
    • Electrical & Electronic Materials
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    • v.8 no.3
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    • pp.357-361
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    • 1995
  • An experiment on characteristics of nMOSFET's in the long stress condition with the maximum of the substrate current has been carried out in order to study on the degradation due to the hot-carrier effect. Based on the measured result of the threshold voltage, the damage is mostly due to the hole injection into the oxide. After long stress, it was shown that the drain current increased at low gate voltages and hence decreased at high gate voltages.

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