A study on the degradation by the hot carrier trapping of the submicron MOSFET with long stress condition

장시간 스트레스 조건에서 submicron MOSFET의 열전자 트래핑에 의한 노화현상에 대한 연구

An experiment on characteristics of nMOSFET's in the long stress condition with the maximum of the substrate current has been carried out in order to study on the degradation due to the hot-carrier effect. Based on the measured result of the threshold voltage, the damage is mostly due to the hole injection into the oxide. After long stress, it was shown that the drain current increased at low gate voltages and hence decreased at high gate voltages.