• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.5
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• pp.473-478
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• 2016

In this paper, the MIS(: Metal-Insulator-Semiconductor) Capacitor with the nitrided-oxide by RTP are fabricated to investigate the carrier trap parameters due to avalanche electron injection. Two times turn-around phenomenon of the flatband voltage shift generated by the avalanche injection are observed. This shows that electron trapping occurs in the oxide film at the first stage. As the electron injection increases, the first turn-around occures due to a positive charge in the oxide layer. After further injection, the curves turns around once again by electron captured. Based on the experimental results, the carrier trapping model for system having multi-traps is proposed and is fitting with experimental data in order to determine trap parameter of nitrided-oxide.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.10
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• pp.1111-1116
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• 2014

In this paper, in order to improve performance of LDPC codes, we propose an effective algorithm with lowering error floor of LDPC codes. This method is done by breaking trapping sets, mostly caused by an undesirable structure. This algorithm is not need to observe all the errors, only need to break the trapping sets, to effect the effectiveness. Simulation results show that its performance can be significantly improved with this decoding algorithm.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.357-361
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• 1995

An experiment on characteristics of nMOSFET's in the long stress condition with the maximum of the substrate current has been carried out in order to study on the degradation due to the hot-carrier effect. Based on the measured result of the threshold voltage, the damage is mostly due to the hole injection into the oxide. After long stress, it was shown that the drain current increased at low gate voltages and hence decreased at high gate voltages.

• 한국데이터정보과학회:학술대회논문집
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• 2002.06a
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• pp.139-139
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• 2002

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1985.10a
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• pp.89-92
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• 1985

• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.10
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• pp.845-851
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• 2014

Dielectrophoresis (DEP) is defined as the motion of suspended particles in solvent resulting from polarization forces induced by an inhomogeneous electric field. DEP has been utilized for various biological applications such as trapping, sorting, separation of cells, viruses, nanoparticles. However, the analysis of DEP trapping has mostly employed the period-averaged ponderomotive forces while the dynamic features of DEP trapping have not been attracted because the target object is relatively large. Such approach is not appropriate for the nanoscale analysis in which the size of object is considerably small. In this study, we thoroughly investigate the dynamic response of trapping to various system parameters and its influence on the trapping stability. The effects of particle conductivity on its motion are also focused.

• Journal of Adhesion and Interface
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• v.21 no.4
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• pp.129-134
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• 2020

Understanding charge trapping at the interface between conjugated semiconductor and polymer dielectric basically gives insight into the development of long-term stable organic field-effect transistors (OFET). Here, the charge transport properties of OFETs using polymer dielectric with various molecular weights (MWs) have been investigated. The conjugated semiconductor, pentacene exhibited morphology and crystallinity, insensitive to MWs of polymethyl methacrylate (PMMA) dielectric. Consequently, transfer curves and field-effect mobilities of as-prepared devices are independent of MWs. Under bias stress in humid environment, however, the drain current decay as well as transfer curve shift are found to increase as the MW of PMMA decreases (MW effect). The charge trapping induced by MW effect is irreversible, that is, the localized charges are difficult to be delocalized. The MW effect is caused by the variation in the density of polymer chain ends in the PMMA: the free volumes at the PMMA chain ends act as charge trap sites, corresponding to drain current decay depending on MWs of PMMA.

• The KIPS Transactions:PartA
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• v.15A no.4
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• pp.211-216
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• 2008

In this paper we fabricated and measured the $0.26{\mu}m$ NMOSFET with wet gate oxide and nitride oxide gate to compare that the charateristics of hot carrier effect, charge to breakdown, transistor Id_Vg curve, charge trapping, and SILC(Stress Induced Leakage Current) using the HP4145 device tester. As a result we find that the characteristics of nitride oxide gate device better than wet gate oxide device, especially hot carrier lifetime(nitride oxide gate device satisfied 30 years, but the lifetime of wet gate oxide was only 0.1 year), variation of Vg, charge to breakdown, electric field simulation and charge trapping etc.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.5
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• pp.1149-1154
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• 2014

To observe the tunneling phenomenon of oxide semiconductor transistor, The Indium-gallum-zinc-oxide thin film transistors deposited on SiOC as a gate insulator was prepared. The interface characteristics between a dielectric and channel were changed in according to the properties of SiOC dielectric materials. The transfer characteristics of a drain-source current ($I_{DS}$) and gate-source voltage ($V_{GS}$) showed the ambipolar or unipolar features according to the Schottky or Ohmic contacts. The ambipolar transfer characteristics was obtained at a transistor with Schottky contact in a range of ${\pm}1V$ bias voltage. However, the unipolar transfer characteristics was shown in a transistor with Ohmic contact by the electron trapping conduction. Moreover, it was improved the on/off switching in a ambipolar transistor by the tunneling phenomenon.

• Journal of KIISE:Software and Applications
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• v.35 no.5
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• pp.325-334
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• 2008

The goal of text categorization is to classify documents into a certain number of pre-defined categories. The previous studies in this area have used a large number of labeled training documents for supervised learning. One problem is that it is difficult to create the labeled training documents. While it is easy to collect the unlabeled documents, it is not so easy to manually categorize them for creating training documents. In this paper, we propose a new text categorization method based on semi-supervised learning. The proposed method uses only unlabeled documents and keywords of each category, and it automatically constructs training data from them. Then a text classifier learns with them and classifies text documents. The proposed method shows a similar degree of performance, compared with the traditional supervised teaming methods. Therefore, this method can be used in the areas where low-cost text categorization is needed. It can also be used for creating labeled training documents.