• 한국해양공학회지
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• 제17권5호
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• pp.32-38
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• 2003

This study investigates the distribution characteristics and relationship of water quality, and analyzes the spatial and temporal variation and distribution of the pollutant loads at Yeong-il Bay. The results of these analysis, the concentrations of nutrient loads (T-N and T-P), both appeared to be at the maximum value in November, while most small values were taken in May for the T-N, and in August for the T-P. For COD, the maximum concentration was in August, which has much precipitation during the same season, T-N was at the mean, and T-P was at the minimum value. Using the cluster analysis to develop the division of the sea basin by the dendrogram, before and after construction of Pohang New-port, the variation characteristics of water quality of Yeong-il Bay were discussed. The in flowing pollutant loads were transported to the landward by the high-density salinity water volume of the bottom layer therefore, it formed nutrient trap or coastal trapping areas of the pollutant load. By this mechanism, it is clear that the water volume with high-density nutrient exists on both sides of the Pohang New-port. Thus, the sea basins increasing concentration of the pollutant load at Yeong-il Bay are most prevalent at Hyeong-san estuary, the Pohang Old, and New-port. To improve water quality of this sea basin, the reduction of these nutrients loads should be the highest priority.

• 전자공학회논문지D
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• 제36D권6호
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• pp.21-27
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• 1999

$0.8{\mu}m$ 표준 CMOS 공정을 이용하여 단층 다결정 실리콘 EEPROM을 설계$0{\cdot}$제작하였다. 프로그램 및 소거특성을 분석한 결과 프로그램 시간은 약 10 ms이하였으나 소거시간이 약 100 ms로 큰 것을 알 수 있었다. 소거시간을 개선하기 위하여 여러 가지의 소거방식을 사용하였다. 그리고 프로그램과 소거시 산호막에 포획된 전자로 인하여 endurance 특성이 나빠지는 것을 개선하기 위하여 소스/드레인 두단자를 통한 소거방법을 이용하였다. 그 결과 단층 다결정 실리콘 EEPROM의 endurance 특성이 기존보다 훨씬 개선된 것을 알 수 있다.

• 전자공학회논문지A
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• 제31A권6호
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• pp.117-127
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• 1994

In this paper, electrical and reliability properties of N$_2$O oxides, grown at the temperature of 95$0^{\circ}C$ and 100$0^{\circ}C$ to 74$\AA$, and 82$\AA$. respectively, using NS12TO gas in a conventional furnace, have been compared with those of pure oxide grown at the temperature of 850 to 84$\AA$ using O$_2$ gas. Initial IS1gT-VS1gT characteristics of N$_2$O oxides were similar to those of pure oxide, and reliability properties of N$_2$O oxides, such as charge trapping, interface state density and leakage current at low electric field under F-N stress, were improved much better than those of pure oxide. But, with increasing capacitor area. TDDB characteristics of N$_2$O oxides were more degraded than those of pure oxide and this degradation of TDDB characteristics was more severe in 100$0^{\circ}C$ N$_2$Ooxide than in 95$0^{\circ}C$ N$_2$O oxide. The improvement of reliability properties excluding TDDB in N$_2$Ooxides was attributed to the hardness of the interface improved by nitrogen pile-up at the interface of Si/SiO$_2$, but on the other hand, the degradation of TDDB characteristics in N$_2$O oxides was obsered due to the increase of local thinning spots caused by excessive nitrogen at interface during the growth of N$_2$O oxides.

• 한국지진공학회:학술대회논문집
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• 한국지진공학회 2000년도 추계 학술발표회 논문집 Proceedings of EESK Conference-Fall 2000
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• pp.81-88
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• 2000

The elastic wave equation is solved using the finite-difference method in 3D space to simulate the seismic wave propagation. It is based on the velocity-stress formulation of the equation of motion on a staggered grid. The nonreflecting boundary conditions are used to attenuate the wave field close to the numerical boundary. To satisfy the stress-free conditions at the free-surface boundary, a new formulation combining the zero-stress formalism with the vacuum one is applied. The effective media parameters are employed to satisfy the traction continuity condition across the media interface. With use of the moment-tensor components, the wide range of source mechanism parameters can be specified. The numerical experiments are carried out in order to test the applicability and accuracy of this scheme and to understand the fundamental features of the wave propagation under the generalized elastic media structure. Computational results show that the scheme is sufficiently accurate for modeling wave propagation in 3D elastic media and generates all the possible phases appropriately in under the given heterogeneous velocity structure. Also the characteristics of the ground motion in an sedimentary basin such as the amplification, trapping, and focusing of the elastic wave energy are well represented. These results demonstrate the use of this simulation method will be helpful for modeling the ground motion of seismological and engineering purpose like earthquake hazard assessment, seismic design, city planning, and etc..

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.682-687
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• 2014

We have performed reverse gate bias stress tests on AlGaN/GaN-on-Si Heterostructure FETs (HFETs). The shift of threshold voltage ($V_{th}$) and the reduction of on-current were observed from the stressed devices. These changes of the device parameters were not permanent. We investigated the temporary behavior of the stressed devices by analyzing the temperature dependence of the instabilities and TCAD simulation. As the baseline temperature of the electrical stress tests increased, the changes of the $V_{th}$ and the on-current were decreased. The on-current reduction was caused by the positive shift of the $V_{th}$ and the increased resistance of the gate-to-source and the gate-to-drain access region. Our experimental results suggest that electron-trapping effect into the shallow traps in devices is the main cause of observed instabilities.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.185-185
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• 2009

Micropump is very useful component in micro/nano fluidics and bioMEMS applications. Using the flexural vibration mode of PZT bar, a piezopump is successfully made. The PZT bar is polarized with thickness direction. The proposed structure for the piezo-pump consists of an input and an output port, piezoelectric ceramic actuator, actuator support, diaphragm. The traveling flexural wave along the bar is obtained by dividing two standing waves which are temporally and spatially phase shifted by 90 degrees from each other. Fluid is drawn into a forming chamber, eventually the forming chamber closes trapping the fluid therein. The finite elements analysis on the proposed pump model is carried out to verify its operation principle and design by the commercial FEM software. Components of piezopump were made, assembled, and tested to validate the concepts of the proposed pump and confirm the simulation results. The performance of the proposed piezopump the highest pressure level of 83.4kHz.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 추계학술대회
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• pp.1104-1109
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• 2004

The present study has been conducted to investigate convective heat/mass transfer inside the cooling passage with bleed holes. The rotating square channel has 40.0 mm hydraulic diameter and the bleed holes on the leading surface of the channel. The hole diameter of bleed hole is 4.5 mm and its spacing (P/d=4.9) is about five times of hole diameter. Mass flow rate through bleed holes is 10% of the main flow rate and rotation number is changed form 0.0 to 0.4. A naphthalene sublimation technique is employed to determine the detailed local heat transfer coefficients using the heat and mass transfer analogy. The cooling performance is influenced by mass flow rate through bleed holes and Coriolis force of rotating channel for fixed reynolds number. The heat transfer is enhanced around holes on the leading surface because of trapping flow by bleeding. However heat transfer on the leading surface is decreased due to Coriolis force.

• 한국전기전자재료학회논문지
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• 제27권4호
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• pp.232-237
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• 2014

We have fabricated white organic light-emitting diodes (OLEDs) by co-doping of red and blue phosphorescent guest emitters into the single host layer. Tris(2-phenyl-1-quinoline) iridium(III) [$Ir(phq)_3$] and iridium(III)bis[(4,6-di-fluorophenyl)-pyridinato-$N,C^{2^{\prime}}$]picolinate (FIrpic) were used as red and blue dopants, respectively. The effects of dopant concentration on the emission, carrier conduction and external quantum efficiency characteristics of the devices were investigated. The emissions on the guest emitters were attributed to the energy transfer to the guest emitters and direct excitation by trapping of the carriers on the guest molecules. The white OLED with 5% FIrpic and 2% $Ir(phq)_3$ exhibited a maximum external quantum efficiency of 19.9% and a maximum current efficiency of 45.2 cd/A.

• 대한방사선기술학회지:방사선기술과학
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• 제14권1호
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• pp.49-60
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• 1991

Thermoluminescent phosphors, which are now being used widely in radiation dosimetry, have an excellent sensitivity to ionizing radiation. In this study, thermoluminescent phosphors of $CaSO_4$ : Mn, $CaSO_4$ : Dy and $CaSO_4$ : Tm are prepared and their physical properties are investigated by measuring the trapping parameters and their luminescent spectra. By considering the sensitivity to X-ray and fading characteristics, $CaSO_4$ : Dy is most adequate to imaging plate. The imaging plate are prepared by coating the $CaSO_4$ : Dy powder on the Al substrate and its dose dependence is linear within the range of 40 mGy-20 Gy X-ray. The sensitivity of imaging plate depends linearly on the thickness of coated phosphor layer up to $35\;mg/cm^2$ and is independent on the grain size of the phosphor in the range of $70{\sim}250\;{\mu}m$. By photographing the imaging plate, X-ray images of the test object are obtained and better than those of X-ray films.

• 전기학회논문지
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• 제56권1호
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• pp.112-116
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• 2007

We have investigated the hysteresis phenomenon of a hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and analyzed the effect of hysteresis phenomenon when a-Si:H TFT is a pixel element of active matrix organic light emitting diode (AMOLED). When a-Si:H TFT is addressed to different starting gate voltages, such as 10V and 5V, the measured transfer characteristics with 1uA at $V_{DS}$ = 10V shows that the gate voltage shift of 0.15V is occurred due to the different quantities of trapped charge. When the step gate-voltage in the transfer curve is decreased from 0.5V to 0.05V, the gate-voltage shift is decreased from 0.78V to 0.39V due to the change of charge do-trapping rate. The measured OLED current in the widely used 2-TFT pixel show that a gate-voltage of TFT in the previous frame can influence OLED current in the present frame by 35% due to the change of interface trap density induced by different starting gate voltages.