• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.693-696
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• 2011

Recently, amorphous oxide semiconductors (AOSs) based thin-film transistors (TFTs) have received considerable attention for application in the next generation displays industry. The research trends of AOSs based TFTs investigation have focused on the high device performance. The electrical properties of the TFTs are influenced by trap density. In particular, the threshold voltage ($V_{th}$) and subthreshold swing (SS) essentially depend on the semiconductor/gate-insulator interface trap. In this article, we investigated the effects of Ar plasma-treated $SiO_2$ insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide (a-IGZO) TFTs. We report on the improvement in interfacial characteristics between a-IGZO channel layer and gate insulator depending on Ar power in plasma process, since the change of treatment power could result in different plasma damage on the interface.

• Current Photovoltaic Research
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• v.4 no.3
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• pp.98-107
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• 2016

Third-generation photovoltaics are of low cost based on solution processes and are targeting a high efficiency. To meet the commercial demand, however, significant improvements of both efficiency and stability are required. In this sense, interfacial engineering can be useful key to solve these issues because trap sites and interfacial energy barrier and/or chemical instability at organic/organic and organic/inorganic interfaces are critical factors of efficiency and stability degradation. Here, we thoroughly review the interfacial engineering strategies applicable to three representative third-generation photovoltaics - organic, perovskite, colloidal quantum dot solar cell devices.

• International Journal of Oral Biology
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• v.34 no.2
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• pp.81-86
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• 2009

Baicalin is a flavonoid purified from the medicinal plant Scutellaria baicalensis. It has been reported that baicalin exhibits antibacterial, anti-inflammatory and analgesic effects. The present study was undertaken to determine the underlying cellular mechanisms of baicalin action in preosteoclasts. The effects of this flavonoid on preosteoclasts were determined by measuring osteoclast generation and osteoclast activity in macrophage-colony stimulating factor (M-CSF)-dependent bone marrow cells (MDBMCs) and in co-cultures of MDBMCs and osteoblasts. Osteoclast generation was assayed by measuring the number of tartrateresistant acid phosphatase (TRAP) (+) multinucleated cells after culture. Osteoclast activity was assayed by measuring the area of the resorption pit after culture. We found that osteoclast generation was induced by M-CSF and receptor activator of NF-kB ligand (RANKL), and by the 1.25-dihydroxycholecalciferol in our cultures. Baicalin decreased both osteoclast generation and activity in MDBM cultures and co-cultures indicating that it may inhibit bone resorption.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.108-109
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• 2014

본 논문에서는 gate와 drain bias stress하에서의 a-IGZO thin-film transistors (TFTs)의 비대칭 열화 메커니즘 분석을 진행하였다. Gate와 drain bias stress하에서의 a-IGZO TFT의 열화 현상은 conduction band edge 근처에 존재하는 oxygen vacancy-related donor-like trap의 발생으로 예상되며, TFT의 channel layer 내에서의 비대칭 열화현상은 source의 metal과 a-IGZO layer간의 contact에 전압이 인가되었을 경우, reverse-biased Schottky diode에 의한 source 쪽에서의 높은 electric field가 trap generation을 가속화시킴으로써 일어나는 것임을 확인할 수 있었다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.497-503
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• 2015

It is essential to acquire an accurate and simple technique for extracting the interface trap density ($D_{it}$) in order to characterize the normally-off gate-recessed AlGaN/GaN hetero field-effect transistors (HFETs) because they can undergo interface trap generation induced by the etch damage in each interfacial layer provoking the degradation of device performance as well as serious instability. Here, the frequency-dependent capacitance-voltage (C-V) method (FDCM) is proposed as a simple and fast technique for extracting $D_{it}$ and demonstrated in normally-off gate-recessed AlGaN/GaN HFETs. The FDCM is found to be not only simpler than the conductance method along with the same precision, but also much useful for a simple C-V model for AlGaN/GaN HFETs because it identifies frequency-independent and bias-dependent capacitance components.

• Korean journal of applied entomology
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• v.32 no.4
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• pp.389-394
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• 1993

Seasonal fluctuation of Beet armyworm, Spodoptem exigua, adults and larvae were momtored by pheromone trap and direct obseration in the welsh onion field, respecLively. Adult peaked on mid~late November and occurred 4 Limes a year by pheromone trap at Yesan, 1990. There were 3 peaks a year at Asan, 1991. The highest number of adults were caught on early September. In Suwon, the yearly number of adults caught by pheromone trap was high in the order of 1990, 1991, and 1992. In 1992, the moLh was initily caught on mid April by pheromone trap at Koheung, Chonnam, and it vms 3 month earlier than that at Suwon. The larvae of beet armyworm at welsh onion field at Asan, 1991 was first found on late June and gradually increased until mid September. The density at peak occurrence was about 20 individual per 100 hills of welsh onion. The peak of the larvae appeared 20 days after peak emergence of adult. It is expected that there are 4 times of occurrence when the first egg of beet armyworm IS laid on mid May at Suwon. It takes 48, 25, 23, and 58 days to complete 1st, 2nd, 3rd. and 4th generation, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.101-106
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• 2009

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.

• Korean Journal of Organic Agriculture
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• v.25 no.4
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• pp.759-772
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• 2017

This experiment was conducted to develop control method for Bemisia tabaci (Gennadius) on eggplant using sticky trap method. According to the color of the sticky traps, the attractiveness of the B. tabaci was the highest in the yellow trap, followed by the green and orange. However, white, blue, red, black and green sticky traps have reduced attractiveness of B. tabaci. In order to improve the efficiency and attractiveness of sticky trap to the B. tabaci, the different kinds of sugars such as glucose, fructose, oligosaccharide, starch syrup and pure sugar were added to sticky traps respectively. However, the effect of B. tabaci attractiveness was low in starch syrup, pure sugar, and non-treated sticky traps. The attracting effect of B. tabaci was depending on the location of sticky trap. The highest value was obtained where sticky traps were located in the top of the eggplant, followed by 30 cm above from the top level. In addition, we were installed up to 40 sticky traps to determine the optimal amount of sticky traps to control B. tabaci in eggplant. When increasing the sticky traps, the number of adult and nymphs of B. tabaci were tended to be decreased significantly. This tendency was more effective in the latter stages than in the early stages. As the number of sticky traps increased, not only the growth rate of eggplant, leaf length, and stem diameter were to be better. But also number of fruits and product marketable value were increased at the early stage of growing as well. The study had proven that the sticky traps had an effect on increasing the yield at the early stage of growth, but the efficiency of controlling decreased due to the high density of B. tabaci of the next generation.

• The Korean Journal of Ecology
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• v.23 no.1
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• pp.65-70
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• 2000

Field collections were made from six gypsy moth (Lymantria dispar L.) Populations in Kyonggy and Cheju areas during the period 1987∼1997. Characteristics of gypsy moth populations at different phases were examined in terms of egg mass density, relative larval density, plant damage, and fecundity. Males captured in pheromone trap were recorded, and we examined if there was a relationship between numbers captured and the population density during the following generation. Egg mass density was closely related with larval density, and furthermore these densities were correlated with the level of plant damage, indicating that larval dispersion was limited in oviposition areas. The gypsy moth population cycle was short in Korea with the period from population development to innocuous level usually lasting 2∼3 years. Male caught by pheromone trap (mean number of males caught per trap per day in peak emergence period) was positively correlated with egg mass densities in the following season (r²=0.93). A low fecundity was detected from outbreak populations which accompanied defoliation. Fecundity of gypsy moth ranged from 538 to 601 at other phases.

• Analytical Science and Technology
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• v.18 no.5
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• pp.396-402
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• 2005

We try to look for optimum conditions of pre-reductants like L-Cysteine, KI and $FeSO_4$ when analyzing inorganic arsenic by using hydride generation-atomic absorption spectrometry, and run a comparative study of effect in the analysis of them. Also, we separated and analyzed only inorganic arsenic by using $H_2SO_4$-trap to eliminate organic arsenic which are MMA(monomethylarsonate) and DMA(dimethylarsinate). Under the conditions of mixture acid of 1.8 M HCl and 0.08 M $HNO_3$, arsenic standard solution of 20 ppb have more higher absorbance than without adding acid. In case of L-Cysteine, As(V) completely reduces into As(III) when 0.5 g of L-Cysteine is reacted more than 30 mins. in weak acid condition of approximately 0.07 M $HNO_3$ or HCl. In the event of KI, As(V) completely reduces into As(III) when 3 g of KI is reacted more than 1hour in acid condition of 0.8 M $HNO_3$. On the occasion of $FeSO_4$, the inside of tube is blocked by precipitation by mixture reaction of $NaBH_4$ and $Fe^{2+}$, therefore, comparing to other pre-reductants, reproducibility of efficiency of reducing As(V) to As(III) is low. To evaluate the accuracy of the analytical results, we use NIST SRM 1643C Trace Elements in Water ($82.1{\pm}1.2ng/mL$). The results are satisfactory.