• Title/Summary/Keyword: Trap generation

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Effects of Perilla frutescens var. crispa and Atractylodes macrocephala Koidzumi mixture on Osteoblast Differentiation and Osteoclast Formation (방사선 육종 차조기와 백출 복합물이 조골세포와 파골세포의 활성에 미치는 영향)

  • Sim, Boo-Yong;Ji, Joong-Gu
    • Journal of the Korean Applied Science and Technology
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    • v.38 no.1
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    • pp.168-177
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    • 2021
  • The effects of the Perilla frutescens var. crispa and Atractylodes macrocephala Koidzumi mixture on the activities of osteoblast differentiation and the restraint of osteoclast formation were investigated. the Perilla frutescens var. crispa and Atractylodes macrocephala Koidzumi mixture in the human osteoblast "MG-63" cell, was examined in relation to alkaline phosphatase (ALP) activity and alizarin red stains. In order to observe the effects of osteoclasts formation, we analyzed RAW 264.7 cell tartrate-resistant acid phosphatase (TRAP) activity and TRAP stains. In cytotoxicity testing, it was confirmed that apple extract is safe at a concentration of 50 ㎍/㎖ or less. The ALP activity and Bone calcification formation ability were the Perilla frutescens var. crispa and Atractylodes macrocephala Koidzumi mixture had a lower activity than that of control group. However the Perilla frutescens var. crispa and Atractylodes macrocephala Koidzumi mixture significantly reduced activity of TRAP in the RAW 264.7 osteoclastic cell generation and effectively Inhibited the TRAP(+) multinuclear cells. Thus, our results demonstrate that the Perilla frutescens var. crispa and Atractylodes macrocephala Koidzumi mixture enhances the inhibitory activity of bone-resorption in RAW 264.7 cells. In conclusion, the Perilla frutescens var. crispa and Atractylodes macrocephala Koidzumi mixture seem to be effective in the prevention and treatment of bone related disorders.

Effect of Sputtering Power on the Change of Total Interfacial Trap States of SiZnSnO Thin Film Transistor

  • Ko, Kyung-Min;Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.6
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    • pp.328-332
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    • 2014
  • Thin film transistors (TFTs) with an amorphous silicon zinc tin oxide (a-2SZTO) channel layer have been fabricated using an RF magnetron sputtering system. The effect of the change of excitation electron on the variation of the total interfacial trap states of a-2SZTO systems was investigated depending on sputtering power, since the interfacial state could be changed by changing sputtering power. It is well known that Si can effectively reduce the generation of the oxygen vacancies. However, The a-2SZTO systems of ZTO doped with 2 wt% Si could be degraded because the Si peripheral electron belonging to a p-orbital affects the amorphous zinc tin oxide (a-ZTO) TFTs of the s-orbital overlap structure. We fabricated amorphous 2 wt% Si-doped ZnSnO (a-2SZTO) TFTs using an RF magnetron sputtering system. The a-2SZTO TFTs show an improvement of the electrical property with increasing power. The a-2SZTO TFTs fabricated at a power of 30 W showed many of the total interfacial trap states. The a-2SZTO TFTs at a power of 30 W showed poor electrical property. However, at 50 W power, the total interfacial trap states showed improvement. In addition, the improved total interfacial states affected the thermal stress of a-2SZTO TFTs. Therefore, a-2SZTO TFTs fabricated at 50 W power showed a relatively small shift of threshold voltage. Similarly, the activation energy of a-2SZTO TFTs fabricated at 50 W power exhibits a relatively large falling rate (0.0475 eV/V) with a relatively high activation energy, which means that the a-2SZTO TFTs fabricated at 50 W power has a relatively lower trap density than other power cases. As a result, the electrical characteristics of a-2SZTO TFTs fabricated at a sputtering power of 50 W are enhanced. The TFTs fabricated by rf sputter should be carefully optimized to provide better stability for a-2SZTO in terms of the sputtering power, which is closely related to the interfacial trap states.

Human Periodontal Ligament Fibroblasts Support the Osteoclastogenesis of RAW264.7 Cells (치주인대섬유아세포가 파골세포분화에 미치는 영향)

  • Lee, Ho;Jeon, Yong-Seon;Choi, Seoung-Hwan;Kim, Hyung-Seop;Oh, Kwi-Ok
    • Journal of Periodontal and Implant Science
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    • v.32 no.4
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    • pp.733-744
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    • 2002
  • The fibroblasts are the principal cells in the periodontal ligament of peridontium. As the periodontal ligament fibroblasts (PDLF) show similar phenotype with osteoblasts, the PDLF are thought to play an important role in alveolar bone remodeling. Cell-to-cell contacted signaling is crucial for osteoclast formation. Recently it has been reported that PDLJ enhance the bone resorbing activity of osteoclasts differentiated from hematopoietic preosteoclasts. The aims of this study were to $clarify\;^{1)}$ the mechanism of PDLF-induced osteoclastogenesis $and\;^{2)}$ whether we can use preosteoclast cell line instead of primary hematopoietic preosteoclast cells for studying the mechanism of PDLF-induced osteoclastogenesis. Osteoclastic differentiation of mouse macrophage cell line RAW264.7 was compared with that of mouse bone marrow-derived M-CSF dependent cell (MDBM), a well-known hematopoietic preosteoclast model, by examining, 1) osteoclast-specific gene expression such as calcitonin receptor, M-CSF receptor (c-fms), cathepsin K, receptoractivator nuclear factor kappa B (RANK) ,2) generation of TRAP(+) multinucleated cells (MNCs), and 3) generation of resorption pit on the $OAAS^{TM}$ plate. RAW264.7 cultured in the medium containing of soluble osteoclast differentiation Factor (sODF) showed similar phenotype with MDBM-derived osteoclasts, those are mRNA expression pattern of osteoclast-specific genes, TRAP(+) MNCs generation, and bone resorbing abivity. Formation of resorption pits by osteoclastic MNCs differentiated from sODF-treated RAW264.7, was completely blocked by the addition of osteoprotegerin (OPG), a soluble decoy receptor for ODF, to the sODF-containing culture me야um. The effects of PDLF on differentiation of RAW264.7 into the TRAP(+) multinucleated osteoclast-like cells were examined using coculture system. PDLF were fxed with paraformaldehyde, followed by coculture with RAW264.7, which induced formation of TRAP(+) MNCs in the absence of additional treatment of sODF. When compared with untreated and fixed PDLF (fPDLF), IL-1 ${\beta}$-treated, or lipopolysaccha-ride-treated and then fixed PDLF showed two-folld increase in the supporting activity of osteoclastogenesis from RAW264.7 coculture system. There were no TRAP(+) MNCs formation in coculture system of RAW264.7 with PDLF of no fixation. These findigs suggested that we can replace the primary hematopoietic preosteoclasts for RAW264. 7 cell line for studying the mechanism of PDLF-induced osteoclastogenesis, and we hypothesize that PDLF control osteoclastogenesis through ODF expression which might be enhanced by inflammatory signals.

Seasonal Occurrence of the Peach Pyralid Moth, Dichocrocis punctiferalis (Pyralidae: Lepidoptera) in Chungnam Area (충남지역에서 복숭아명나방(Dichocrocis punctiferalis) 발생소장)

  • Kim, Woo-Yeun;Youn, Young-Nam
    • Korean Journal of Agricultural Science
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    • v.29 no.1
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    • pp.32-43
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    • 2002
  • The peach pyralid moth (Dichocrocis punctiferalis) is reported as import ant pest insect to chestnut fruits in Asia including Korea. For seasonal occurrence of D. punctiferalis in 1996, 1998 and 1999, D. punctiferalis adults were collected by light trap and sex pheromone wing trap in the chestnut orchard. Also, damaged rate of chestnut fruits were examined each collecting site. In 1996, according to examination by using light trap at three different site in Kongju, the occurrence peak of 2nd gene ration of D. punctiferalis adults was early August. Collected individuals after September were cons ide red as 3rd generation. Damaged rate due to maturation type was 26.5% averagely. The order of damaged rate were early, late and middle maturation type as 35.04%, 19.35% and 26.03%, respectively. Using synthetic sex pheromone trap at Kongju, Cheungyang and Buyeo in 1998, occurrence peaks were occurred mid-August to 2nd generation and late September to 3nd gene ration in Kongju. However, from early-August to late-September 5 peaks were occurred sequentially in Cheungyang. Second generation adults were occurred in mid-August and 3rd ones were occurred from late-September to early-October in Buyeo. In 1999, occurrence peaks of 3rd generation were early, middle and late September in Kongju, Cheungyang and Buyeo respectively. Damaged rate were 6.8%, 6.6% and 15.3% in Kongju, Cheungyang and Buyeo, respectively. Damaged rate order due to variety were Eunki, Chukpa, Danpa, Bokpa, Wangjung, Byunggo57, Yuoma at Buyeo and were Chukpa, Dukmyung, Byunggo57 at Cheungyang in 1999. Damage rate of chestnut were different with variety. Eunki and Chukpa in Buyeo and Chukpa and Dukmyung in Cheungyang were more damaged by D. punctiferalis respectively.

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Effects of Asparagus cochinchinensis (Lour.) Merr. on the Stimulation of Osteoblast Differentiation and Inhibition of Osteoclast Generation (천문동 추출물에 의한 조골세포 분화 촉진 및 파골세포 생성 억제효과)

  • Lee, Seung-Youn;Kim, Si-Na;Kim, Jong-Keun
    • Journal of the Korean Society of Food Science and Nutrition
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    • v.37 no.1
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    • pp.16-19
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    • 2008
  • Bone mass in adults decreases with age because of the imbalance between the rate of bone formation and resorption. We performed this study to investigate whether Asparagus cochinchinensis (Lour.) Merr. (ACAE) plays a role in osteoblasts differentiation and osteoclasts formation. Ethanol extract of ACAE showed increase in the differentiation and alkaline phosphatase activity of osteoblasts. Also, it decreased the number of tartrate-resistant acid phosphatase (TRAP)-positive multinucleated cells (OCLs) and TRAP activity. Therefore, ACAE has the potential to prevent bone-related diseases such as osteoporosis by increasing the differentiation of osteoblasts and reducing both the number and activity of osteoclasts.

Temperature Effect on the Interface Trap in Silicon Nanowire Pseudo-MOSFETs

  • Nam, In-Cheol;Kim, Dae-Won;Heo, Geun;Najam, Syed Faraz;Hwang, Jong-Seung;Hwang, Seong-U
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.487-487
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    • 2013
  • According to shrinkage of transistor, interface traps have been recognized as a major factor which limits the process development in manufacturing industry. The traps occur through spontaneous generation process, and spread into the forbidden band. There is a large change of current though a few traps are existed at the Si-SiO2 interface. Moreover, the increased temperature largely affects to the leakage current due to the interface trap. For this reason, we made an effort to find out the relationship between temperature and interface trap. The subthreshold swing (SS) was investigated to confirm the correlation. The simulated results show that the sphere of influence of trap is enlarged according to increase in temperature. To investigate the relationship between thermal energy and surface potential, we extracted the average surface potential and thermal energy (kT) according to the temperature. Despite an error rate of 6.5%, change rates of both thermal energy and average surface potential resemble each other in many ways. This allows that SS is affected by the trap within the range of the thermal energy from the surface energy.

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Effect of Pyrroloquinoline Quinone on Osteoclast Generation and Activity (Pyrroloquinoline quinone이 파골세포의 생성 및 활성에 미치는 영향)

  • Ko, Seon-Yle;Han, Dong-Ho;Kim, Jung-Keun
    • Journal of Oral Medicine and Pain
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    • v.30 no.3
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    • pp.329-336
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    • 2005
  • We examined the effect of PQQ, as a scavenger of superoxide, on osteoclast-like cell formation and on mature osteoclast function. To determine whether PQQ scavenges the superoxide, nitroblue tetrazolium (NBT) staining, which is a method to detect superoxide, was performed on HD-11 cells which are a chick myelomonocytic cell line having tartrate-resistant acid phosphatase (TRAP) activity in response to 1,25-dihydroxyvitamin $D_3\;[1,25(OH)_2D_3]$. Histochemical study of TRAP was also performed on HD-11 cells. PQQ inhibited the TRAP-positive multinucleated cell formation of chicken bone marrow cells was also examined. The addition of 20 ${\mu}M$ PQQ inhibited the formation of TRAP-positive multinucleated cell. When chicken osteoclasts were cultured on dentin slices, treatment of 20 ${\mu}M$ PQQ resulted in a significant decrease in dentin resorption by osteoclasts in terms of total resorption area and number of resorption pits. The present data suggest that PQQ, possibly as a scavenger of superoxide ion, inhibits the osteoclastic differentiation and bone resorption.

Generation and Selection of Promoter Trap Lines for the Investigation of Shoot Development in Arabidopsis (애기장대에 있어서 shoot 발달 연구를 위한 프로모터 trap 라인들의 제조 및 선별)

  • Lee Hwa-Mok;Park Hee-Yeon;Zulfugarov Ismayil S.;Lee Choon-Hwan;Moon Yong-Hwan
    • Journal of Life Science
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    • v.16 no.3 s.76
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    • pp.540-545
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    • 2006
  • T-DNA-mediated transformation is a common method for generating transgenic plants with insertional mutagenesis. In order to identify important genes involved in shoot development, a system of promoter trap insertional mutagenesis was employed in Arabidopsis thaliana. For this system, an efficient promoter trap vector, pFGL561 was developed. The pFGL561 includes a basta-resistant gene, an intron with multiple splicing donor and acceptor sites, and a promoter-less GFP reporter gene. Using floral-dipping method, we made total 300 $T_1$ promoter-trap lines which were screened for GFP expression. GFP signals in the $T_1$ plants were detected with high frequency, 26.7%, and the signals were reconfirmed in $T_2$ plants. To isolate the genes that are involved in shoot development, phenotypes were analyzed in $T_2$ plants of the 19 $T_1$ lines that had GFP signals in shoot apex, and 6 $T_1$ lines were selected that had abnormal shoot development. These lines will be very useful for the investigation of shoot development.

Analysis of Reliability for Different Device Type in 65 nm CMOS Technology (65 nm CMOS 기술에서 소자 종류에 따른 신뢰성 특성 분석)

  • Kim, Chang Su;Kwon, Sung-Kyu;Yu, Jae-Nam;Oh, Sun-Ho;Jang, Seong-Yong;Lee, Hi-Deok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.12
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    • pp.792-796
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    • 2014
  • In this paper, we investigated the hot carrier reliability of two kinds of device with low threshold voltage (LVT) and regular threshold voltage (RVT) in 65 nm CMOS technology. Contrary to the previous report that devices beyond $0.18{\mu}m$ CMOS technology is dominated by channel hot carrier(CHC) stress rather than drain avalanche hot carrier(DAHC) stress, both of LVT and RVT devices showed that their degradation is dominated by DAHC stress. It is also shown that in case of LVT devices, contribution of interface trap generation to the device degradation is greater under DAHC stress than CHC stress, while there is little difference for RVT devices.

Tunneling Current Calculation in HgCdTe Photodiode (HgCdTe 광 다이오드의 터널링 전류 계산)

  • 박장우;곽계달
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.9
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    • pp.56-64
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    • 1992
  • Because of a small bandgap energy, a high doping density, and a low operating temperature, the dark current in HgCdTe photodiode is almost composed of a tunneling current. The tunneling current is devided into an indirect tunneling current via traps and a band-to-band direct tunneling current. The indirect tunneling current dominates the dark current for a relatively high temperature and a low reverse bias and forward bias. For a low temperature and a high reverse bias the direct tunneling current dominates. In this paper, to verify the tunneling currents in HgCdTe photodiode, the new tunneling-recombination equation via trap is introduced and tunneling-recombination current is calculated. The new tunneling-recombination equation via trap have the same form as SRH (Shockley-Read-Hall) generation-recombination equation and the tunneling effect is included in recombination times in this equation. Chakrabory and Biswas's equation being introduced, band to band direct tunneling current are calculated. By using these equations, HgCdTe (mole fraction, 0.29 and 0.222) photodiodes are analyzed. Then the temperature dependence of the tunneling-recombination current via trap and band to band direct tunneling current are shown and it can be known what is dominant current according to the applied bias at athe special temperature.

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