• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.123-123
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• 2015

Al doped ZnO(AZO) films as a transparent conductive oxide (TCO) electrode were deposited on glass, polyethylene naphthalate (PEN) and polyethylene terephthalate (PET) at room temperature by a conventional rf-magneton sputtering (CMS) and a facing target sputtering (FTS) using Al2O3 and ZnO targets. In order to investigation of AZO properties, the structural, surface morphology, electrical, and optical characteristics of AZO films were respectively analyzed. The resistivities of AZO films using FTS system were $6.50{\times}10-4{\Omega}{\cdot}cm$ on glass, $7.0{\times}10-4{\Omega}{\cdot}cm$ on PEN, and $7.4{\times}10-4{\Omega}{\cdot}cm$ on PET substrates, while the values of AZO films using CMS system were $7.6{\times}10-4{\Omega}{\cdot}cm$ on glass, $1.20{\times}10-3{\Omega}{\cdot}cm$ on PEN, and $1.58{\times}10-3{\Omega}{\cdot}cm$ on PET substrates. The AZO-films deposited by FTS system showed uniform surface compared to those of the films by CMS system. We thought that the films deposited by FTS system had low stress due to bombardment of high energetic particles during CMS process, resulted in enhanced electrical conductivity and crystalline quality by highly c-axis preferred orientation and closely packed nano-crystalline of AZO films using FTS system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.961-968
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• 2009

In this work, transparent conductive oxide(TCO) films such as $In_2O_3-SnO_2$(ITO) and $In_2O_3-ZnO$(IZO) were prepared on polyethylene naphthalene(PEN) and glass substrates by using rf-magnetron sputtering system. The TCO films deposited on PEN substrate show very poor conductivity as compared to that of the TCO films deposited on glass substrates. From the results of the residual gas analysis(RGA) test, this poor stability of plastic substrate is presumed to be caused by the deteriorated adhesion between the TCO films and the plastic substrate due to outgassing from the plastic substrate during deposition of TCO films. From our experiment, it is found that the vaporization of some defects in the plastic substrates deteriorate the adhesion of the TCO films to the plastic substrate, because the most plastic substrates containing the water vapor and/or other adsorbed particles such as organic solvents. Mixing of these gases vaporized in the sputtering process will also affect the electrical property of the deposited TCO films. Inorganic thin composite $(SiO_2)_{40}(ZnO)_{60}$ film as a gas barrier layer is coated on the PEN substrate to protecting the diffusion of vapors from the substrate, so that the TCO films with an improved quality can be obtained.

• Journal of the Korean institute of surface engineering
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• v.38 no.5
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• pp.188-192
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• 2005

Indium zinc oxide (IZO) thin films were deposited on glass substrate by dc magnetron sputtering. The effects of oxygen flow rate and deposition temperature on electrical and optical properties of the films were investigated. With addition of small amount of oxygen gas, the characteristic properties of amorphous IZO films were improved and the specific resistivity was about $4.8{\times}10^{-4}\Omega{\cdot}cm$. Change of structural properties according to the deposition temperature was observed with XRD, SEM, and AFM. Films deposited above $300^{\circ}C$ were found to be polycrystalline. Surface roughness of the films was increased due to the formation of grains on the surface. Electrical conductivity became deteriorated for polycrystalline IZO films. Consequently, high quality IZO films could be prepared by do sputtering with $O_{2}/Ar{\simeq}0.03$ and deposition temperature in range of $150\~200^{\circ}C$; a specific resistivity of $3.4{\times}10^{-4}{\Omega}{\cdot}cm$, an optical transmission over $90\%$ at wavelength of 550 nm, and a rms value of surface roughness about $3{\AA}$.

• Journal of the Korean institute of surface engineering
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• v.53 no.4
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• pp.182-189
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• 2020

Indium tin oxide (ITO) used a transparent electrode of a photoelectric device has a low sheet resistance and a high transmittance. However, ITO is disadvantageous in that the process cost is expensive, and the process time is long. Silver nanowires (AgNWs) transparent electrodes are based on a low cost solution process. In addition, it has attracted attention as a next-generation transparent electrode material that replaces ITO because it has similar electrical and optical characteristic to ITO, it is noted as a. AgNW thin films are mainly produced by spin-coating. However, the spin-coating process has a disadvantage of high material loss. In this study, the material loss was reduced by using about 2~10 ㎕ of AgNW solution on a (25 × 25) ㎟ substrate using the shear-coating method. It was also possible to align AgNWs in the drag direction by dragging the meniscus of the solution. The electro-optical properties of the AgNW thin film were adjusted by changing the experimental parameters that the amount of AgNWs suspension, the gap between the substrate and the blade, and the coating speed. As a result, AgNW thin films with a transmittance of 90.7 % at a wavelength of 550 nm and a sheet resistance of 15 Ω/□ was deposited and exhibited similar properties to similar AgNW transparent electrodes studied by other researchers.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1485_1486
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• 2009

Transparent conductive metal oxide films of $In_{2-x}Sn_xO_3$ (ITiO) and $In_{2-x}Sn_xO_3$ (ITO) were deposited by RF magnetron sputtering at relatively low substrate temperature (~$300^{\circ}C$) and at high rate (~10nm/min). Electrical and optical properties of the films were investigated as well as film structure and morphology, as it is compared with the commercial F:$SnO_2$ (FTO) glass. Near infrared ray transmittance of ITiO is the highest for wavelengths over 1000nm, which can increase dye sensitized compared to ITiO and FTO. Dye-sensitized solar cells (DSCs) were fabricated using the ITiO, ITO and FTO. Photoconversion efficiency ($\eta$) of DSC using ITiO is 5.5%, whereas 5.0% is obtained from DSC with ITO, both at 100mW/$cm^2$ light intensity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.417-418
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• 2008

Transparent conductive oxide (TCO) are necessary as front electrode or anti-reflecting coating for increasing efficiency of LED and Photodiode. In this paper, aluminum-doped Zinc oxide films(AZO) were prepared by DC magnetron sputtering on glass(corning 1737) and Si substrate at temperature of $100^{\circ}C$ and then annealed at temperature of $400^{\circ}C$ for 1hr in Ar and vaccum. The AZO films were etched in diluted HCL (0.5 %) to examine the surface morphology properties. After annealing, Structural and electrical property were investigated. The c-axis orientation along (002) plane was enhanced and the electrical resistivity of the AZO film decreased from $1.1\times10^{-1}$ to $1.6\times10^{-2}{\Omega}cm$. We observed textured structure of AZO thin film etched for 2s.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.666-670
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• 2007

Aluminuim doped zinc oxide(ZnO:AL)Films have been prepared on Polyimide(PI) and Coming 7059 glass substrates by r.f. magnetron sputtering method. The structural of the ZnO:Al films were studied in accordance with various deposition R.F power and working pressure by XRD, SEM. And The electrical and optical properties of ZnO:Al films were characterized by Hall effect and UN visible spectrophotometer measurements, ZnO:Al films had were hexagonal wurtzite structure and dominant c-axis orientation. The R.f power and working pressure for optimum condition to fabricate the transparent conductive films using a PI substrate were 2 mTorr and 100W, respectively. The resistivity of the ZnO:Al films prepared under this condition were $9.6{\times}10^{-4}{\Omega}cm$. The optical transmittance of 400nm thick films at 550nm is ${\sim}85 %$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.452-452
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• 2013

ZnO is one of the most attractive transparent conductive oxide (TCO) films because of low toxicity, a wide band gap material and relatively low cost. However, the electrical conductivity of un-doped ZnO is too high to use it as TCO films in practical application. To improve electrical properties of undoped ZnO, transition metal (TM) doped ZnO films such as Al doped ZnO or Ti doped ZnO have been extensively studied. Here, we prepared Ti doped ZnO thin films by atomic layer deposition (ALD) for the application of TCO films. ALD was used to prepare Ti-doped ZnO thin films due to its inherent merits such as large area uniformity, precise composition control in multicomponent thin films, and digital thickness controllability. Also, we demonstrated that ALD method can be utilized for fabricating highly ordered freestanding nanostructures of Ti-doped ZnO thin films by combining with BCP templates, which can potentially used in the photovoltaic applications.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1345_1346
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• 2009

In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on glass substrate by RF magnetron sputtering method using an Al-doped ZnO target (Al: 2wt.%) at room temperature as the thickness of 150 nm. We investigated the effects of the RF power between 100~350 W in the steps of 50 W on structural, electrical and optical properties of AZO films. The thickness and cross-sectional images of films were observed by field emission scanning electron microscopy (FE-SEM) and all of the films were kept to be constant about 150 nm on glass substrate. The grain size of AZO films figured out X-ray diffraction (XRD) on using the Scherrer' equation and their electrical properties investigated Hall effect electronic transport measurement system. Moreover, we measured transmittance of AZO films by UV/VIS spectrometer.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2009.10a
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• pp.399-401
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• 2009

Transparent conductive metal oxide films of $In_{2-x}Ti_xO_3$ (ITiO) and $In_{2-x}Sn_xO_3$ (ITO) were deposited by RF magnetron sputtering at substrate temperature of $300^{\circ}C$ and at high rate (${\sim}10$nm/min). Electrical and optical properties of the films were investigated as well as film structure and morphology, as it is compared with the commercial F:$SnO_2$ (FTO) glass. Near infrared ray transmittance of ITiO is the highest for wavelengths over 1000nm, which can increase dye sensitized compared to ITiO and FTO. Dye-sensitized solar cells (DSCs) were fabricated using the ITiO, ITO and FTO. Photoconversion efficiency (${\eta}$) of DSC using ITiO is 5.5%, whereas 5.0% is obtained from DSC with ITO. both at 100 mW/$cm^2$ light intensity.