Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2009.07a
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- Pages.1345_1346
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- 2009
Characterization of the effect of RF power on the properties of AZO films deposited at room temperature
RF 파워에 따른 상온에서 합성한 AZO 투명전도막의 특성분석
- Seo, Jae-Keun (Hanbat national University) ;
- Ko, Ki-Han (Hanbat national University) ;
- Kim, Jae-Kwang (Hanbat national University) ;
- Lee, Jong-Hwan (Hanbat national University) ;
- Lee, You-Sung (Hanbat national University) ;
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Choi, Won-Seok
(Hanbat national University)
- Published : 2009.07.14
Abstract
In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on glass substrate by RF magnetron sputtering method using an Al-doped ZnO target (Al: 2wt.%) at room temperature as the thickness of 150 nm. We investigated the effects of the RF power between 100~350 W in the steps of 50 W on structural, electrical and optical properties of AZO films. The thickness and cross-sectional images of films were observed by field emission scanning electron microscopy (FE-SEM) and all of the films were kept to be constant about 150 nm on glass substrate. The grain size of AZO films figured out X-ray diffraction (XRD) on using the Scherrer' equation and their electrical properties investigated Hall effect electronic transport measurement system. Moreover, we measured transmittance of AZO films by UV/VIS spectrometer.
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