• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.666-670
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• 2007

Aluminuim doped zinc oxide(ZnO:AL)Films have been prepared on Polyimide(PI) and Coming 7059 glass substrates by r.f. magnetron sputtering method. The structural of the ZnO:Al films were studied in accordance with various deposition R.F power and working pressure by XRD, SEM. And The electrical and optical properties of ZnO:Al films were characterized by Hall effect and UN visible spectrophotometer measurements, ZnO:Al films had were hexagonal wurtzite structure and dominant c-axis orientation. The R.f power and working pressure for optimum condition to fabricate the transparent conductive films using a PI substrate were 2 mTorr and 100W, respectively. The resistivity of the ZnO:Al films prepared under this condition were $9.6{\times}10^{-4}{\Omega}cm$. The optical transmittance of 400nm thick films at 550nm is ${\sim}85 %$.

• Transactions on Electrical and Electronic Materials
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• 제14권6호
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• pp.312-316
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• 2013

In this study, short-circuit preventive layer (blocking layer) was deposited between conductive transparent electrode and porous $TiO_2$ film in the DSSCs. As blocking layer, we selected the metal-oxide such as $TiO_2$, $Nb_2O_5$ and ZnO. The sheet resistance with each different blocking layers were 18 ${\Omega}/sq.$ for the $TiO_2$, 10 ${\Omega}/sq.$ for the $Nb_2O_5$ and 8 ${\Omega}/sq.$ for the ZnO, while the RMS (Root Mean Square) roughness value of DSSCs were 39.61 nm for the $TiO_2$, 41.84 nm for the $Nb_2O_5$ and 36.14 nm for the ZnO respectively. From the results of photocurrent-voltage curves, a sputtered $Nb_2O_5$ blocking layer showed higher performance on 2.64% of photo-electrochemical properties. The maximum of conversion efficiency which was achieved under 1 sun irradiation by depositing the blocking layer increased up to 0.56%.

• 한국전기전자재료학회논문지
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• 제26권4호
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• pp.298-303
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• 2013

In this study, the W-interconnected dye-sensitized solar cell (DSSC) modules composed of a number of rectangular cells connected in series were investigated, where neighboring cells are processed in reverse. The DSSC modules, a module of dimension about 200 mm ${\times}$ 200 mm, were fabricated with different working electrode width ranging from 5 mm to 21 mm. The short-circuit current of the module increased as the working electrode width increased. Whereas, the decrease in the working electrode width resulted in the increase of the conversion energy efficiency, fill factor, and open-circuit voltage, which is explained by the fact that the possibility that electrons are recombined along their path on the transparent conductive oxide substrate decreases. The module with the conversion energy efficiency of 3.59% was obtained with the working electrode width of 5 mm.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1345_1346
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• 2009

In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on glass substrate by RF magnetron sputtering method using an Al-doped ZnO target (Al: 2wt.%) at room temperature as the thickness of 150 nm. We investigated the effects of the RF power between 100~350 W in the steps of 50 W on structural, electrical and optical properties of AZO films. The thickness and cross-sectional images of films were observed by field emission scanning electron microscopy (FE-SEM) and all of the films were kept to be constant about 150 nm on glass substrate. The grain size of AZO films figured out X-ray diffraction (XRD) on using the Scherrer' equation and their electrical properties investigated Hall effect electronic transport measurement system. Moreover, we measured transmittance of AZO films by UV/VIS spectrometer.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.130.2-130.2
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• 2011

본 연구에서는 RF magnetron sputtering을 이용하여 실리콘 박막 태양전지용 ZnO:Al 전면전극을 제작하고 다양한 식각조건에 따른 ZnO:Al 박막의 표면형상 변화와 함께 전기적 및 광학적 특성 변화를 조사하였다. pin 구조를 갖는 실리콘 박막 태양전지의 효율 향상을 위해서는 입사광의 산란효과에 따른 광포획 증가가 필수적이며 이를 위하여 ZnO:Al 전면전극의 표면텍스처링 형성이 필요하다. 식각용액으로는 HCl과 HF 등을 사용하였으며 식각용액 농도 및 식각시간을 변화시켰다. 식각 후의 ZnO:Al 박막의 표면형상은 SEM(Scanning Electron Microscope)과 AFM(Atomic Force Microscope)을 이용하여 분석을 하였고, UV-visible-nIR spectrometer를 이용하여 총 투과도 및 산란 투과도를 측정하였다. 이 외에도 four-point probe 및 Hall measurement를 이용하여 전기적 특성 변화를 조사하였다. 다양한 식각조건에 따라 제조된 ZnO:Al 박막 위에 실리콘 박막 태양전지를 제작하여 전면전극의 표면형상에 따른 태양전지 성능변화를 비교 분석하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.452-452
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• 2013

ZnO is one of the most attractive transparent conductive oxide (TCO) films because of low toxicity, a wide band gap material and relatively low cost. However, the electrical conductivity of un-doped ZnO is too high to use it as TCO films in practical application. To improve electrical properties of undoped ZnO, transition metal (TM) doped ZnO films such as Al doped ZnO or Ti doped ZnO have been extensively studied. Here, we prepared Ti doped ZnO thin films by atomic layer deposition (ALD) for the application of TCO films. ALD was used to prepare Ti-doped ZnO thin films due to its inherent merits such as large area uniformity, precise composition control in multicomponent thin films, and digital thickness controllability. Also, we demonstrated that ALD method can be utilized for fabricating highly ordered freestanding nanostructures of Ti-doped ZnO thin films by combining with BCP templates, which can potentially used in the photovoltaic applications.

• Transactions on Electrical and Electronic Materials
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• 제17권2호
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• pp.98-103
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• 2016

The surface morphology of the front transparent conductive oxide (TCO) films plays a vital role in amorphous silicon thin film solar cells (a-Si TFSCs) due to their high transparency, conductivity and excellent light scattering properties. Recently, plasma textured glass surface morphologies received much attention for light trapping in a-Si TFSCs. We report various plasma textured glass surface morphologies for the high efficiency of a-Si TFSCs. Plasma textured glass surface morphologies showed high rms roughness, haze ratio with micro- and nano size surface features and are proposed for future high efficiency of a-Si TFSCs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1474-1476
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• 2005

ZnO:Al(AZO) has been investigated for the photovoltaic cell or TCO(Transparent Conductive Oxide) of the display, because it has good electrical and optical properties. In this study, the ZnO:Al(AZO) thin film prepared on variation of substrate temperature by FTS(Facing Targets Sputtering) system. In case of TCO, because resistivity and roughness values affect the lighting of the OLED, their factors are very important. Therefore, in this paper, the electrical and optical properties of the AZO thin film were investigated with the deposition conditions and its roughness was investigated on variation of the substrate temperature. In results, AZO thin film deposited with the transmittance over 80% and the resistivity was reduced from $1.36{\times}10^{-3}$ [O-cm] to $4{\times}10^{-4}$ [O-cm] with increasing the substrate temperature from R.T to $200[^{\circ}C]$. Especially, we could obtain the resistivity $4{\times}10^{-4}$ [O-cm] of AZO thin film prepared at working pressure 1[mTorr], input current 0.4[A] and substrate temperature $200[^{\circ}C]$.

• 한국전기전자재료학회논문지
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• 제28권3호
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• pp.180-184
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• 2015

Stainless steel (SS) mesh was used to fabricate photoelectrode for flexible dye-seisitzed solar cells (DSSCs) in order to evaluate them as replacements for more expensive transparent conductive oxide(TCO). We fabricated the DSSCs with new type of photoelectrode, which consisted of flexible SS mesh coated with 100 nm thickness titanium (Ti) protective layer deposited using electron-beam deposition system. SS mesh DSSCs with protective layer showed higher efficiency than those without a protective layer. The best cell property in the present study showed the open circuit voltage (Voc) of 0.608 V, short-circuit current density (Jsc) of $5.73mA\;cm^{-2}$, fill factor (FF) of 65.13%, and efficiency (${\eta}$) of 2.44%. Compared with SS mesh based on DSSCs (1.66%), solar conversion of SS mesh based on DSSCs with protective layer improved about 47%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.303-304
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• 2008

Al, N-codoped ZnO(ZnO:N,Al) thin films were deposited on n-type Si(100) substrate at $450^{\circ}C$ with various conditions of ambient gas$(N_2:O_2)$ by DC magnetron sputtering method using ZnO:$Al_2O_3$(2wt%) as a target, and then were annealed at 500, 700, $800^{\circ}C$ in $N_2$ gas for one hour. XRD patterns showed that all of the ZnO:N,Al thin films annealed at $80^{\circ}C$ grew with two peaks, which means poor crystallinity of the thin films deposited. Hall effects in Van der Pauw configuration proved that after annealing the films deposited showed low resistivity and high carrier concentration. While the films annealed at $800^{\circ}C$ showed low resistivity of $\sim10^{-2}\Omega$ cm and high carrier concentration of $\sim10^{19}cm^{-3}$.