• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.336-340
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• 2012

Wide band gap p-type hydrogenated amorphous silicon oxide (a-SiO:H) buffer layer has been used at the interface of transparent conductive oxide (TCO) and hydrogenated amorphous silicon (a-Si:H) p-type layer of a p-i-n type a-Si:H solar cell. Introduction of 5 nm thick buffer layer improves in blue response of the cell along with 0.5% enhancement of photovoltaic conversion efficiency (η). The cells with buffer layer show higher open circuit voltage (Voc), fill factor (FF), short circuit current density (Jsc) and improved blue response with respect to the cell without buffer layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.421.1-421.1
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• 2016

We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.383-384
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• 2008

$SnO_2$ oxides are considerable interest for the development of transparent electrode, thin film resistor and gas sensors. Electrospinning is a class of nanofiber forming processes by which electrostatic forces are employed to control the production of nanofibers. In this study, antimony doped tin oxide thin films were prepared by electrospinning process. Effects of ATO doping concentration and applied voltage on electrical and light transmission properties were investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.151-151
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• 2009

Recently, there has been increasing interest in amorphous oxide semiconductors to find alternative materials for an amorphous silicon or organic semiconductor layer as a channel in thin film transistors(TFTs) for transparent electronic devices owing to their high mobility and low photo-sensitivity. The fabriction of amorphous oxide-based TFTs at room temperature on plastic substrates is a key technology to realize transparent flexible electronics. Amorphous oxides allows for controllable conductivity, which permits it to be used both as a transparent semiconductor or conductor, and so to be used both as active and source/drain layers in TFTs. One of the materials that is being responsible for this revolution in the electronics is indium-zinc-tin oxide(IZTO). Since this is relatively new material, it is important to study the properties of room-temperature deposited IZTO thin films and exploration in a possible integration of the material in flexible TFT devices. In this research, we deposited IZTO thin films on polyethylene naphthalate substrate at room temperature by using magnetron sputtering system and investigated their properties. Furthermore, we revealed the fabrication and characteristics of top-gate-type transparent TFTs with IZTO layers, seen in Fig. 1. The experimental results show that by varying the oxygen flow rate during deposition, it can be prepared the IZTO thin films of two-types; One a conductive film that exhibits a resistivity of $2\times10^{-4}$ ohm${\cdot}$cm; the other, semiconductor film with a resistivity of 9 ohm${\cdot}$cm. The TFT devices with IZTO layers are optically transparent in visible region and operate in enhancement mode. The threshold voltage, field effect mobility, on-off current ratio, and sub-threshold slope of the TFT are -0.5 V, $7.2\;cm^2/Vs$, $\sim10^7$ and 0.2 V/decade, respectively. These results will contribute to applications of select TFT to transparent flexible electronics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.203-208
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• 2014

In this study, Sputtering method was used to grow Al-dopes ZnO films on a CIGS absorber layer, in order to examine the effect of TCO on properties of CIGS solar cell devices. Structural, electrical and optical properties were investigated by varied thickness of Al-dopes ZnO films. Also, relation to the application as a window layer in CIGS thin film solar cell were studied. It was found that the electrical and structural properties of ZnO:Al film improved with increasing its thickness. However, the optical properties degraded. Jsc of the fabricated CIGS based solar cells was significantly influenced by the variation of the ZnO:Al window layer thickness. Because ZnO:Al window layer is one of the Rs factors in CIGS solar cell. Rs has the biggest influence on efficiency characteristic. In order to obtain high efficiency of CIGS solar cell, ZnO:Al window layer should be fabricated with electrically and optically optimized.

• Current Photovoltaic Research
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• v.12 no.2
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• pp.37-40
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• 2024

One of the current innovation trends in the solar industry is the increase in the size of silicon wafers. As the wafer size increases, the series resistance of the module rises, highlighting the need for research on methods for cutting and bonding solar cells. Among these, the Infrared (IR) laser scribing technique has been extensively researched. However, there is still insufficient optimization research regarding the thermal damage caused by lasers on the Transparent Conductive Oxide (TCO) layer of Heterojunction (HJT) solar cells. Therefore, in this study, we systematically varied conditions such as IR laser scribing speed, frequency, power, and the number of scribes to investigate their impact on the performance of cut cells under each condition. Additionally, we conducted a comparative analysis of thermal damage effects on the TCO layer based on varying scribing depths.

• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.568-571
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• 2005

Highly transparent ZnO films with low resistivity for thin film solar cell applications were fabricated at low temperature by rf magnetron sputtering. Al-doped ZnO films were deposited on glass substrates at a substrate temperature of $200^{\circ}C$. electrical and optical properties of the ZnO:Al films were investigated in terms of the reparation conditions. The transmittance of the ZnO:Al films in the visible range is 90 %. The lowest resistivity of the ZnO:Al films is about $5.7\times10^{-4}$ $\Omega$ cm at the Al content of 2.5 wt% with the film thickness of 500 nm. After deposition, the smooth surface of ZnO:Al films were etched in diluted HCl (0.5%) to investigate the variation of electrical and surface morphology properties due to an textured surface.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.2
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• pp.126-130
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• 2011

Transparent conductive oxide (TCO) is an important part in the construction of dye-sensitized solar cells (DSCs) because of its low sheet resistance, sufficient light transparent ability and high photoelectrical response as a porous photo-electrode material of DSCs. However, the use of TCO for the two DSC electrodes can result in significant cost increase for the less effective DSCs compared to Si based solar cell. Therefore, the replacement of TCO is required for the commercial production of DSCs. In this study, TCO electrodes are replaced by stainless steel mesh. The 3.44[%] efficiency of the prepared TCO-less DSCs sample was obtained.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1351_1352
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• 2009

We deposited $SnO_2$:F thin films by atomospheric pressure chemical vapor deposition(APCVD) on corning glass. $SnO_2$:F films were used as transparent conductive oxide (TCO) electrode for Si thin film solar cells. We have investigated structural, electrical and optical properties of $SnO_2$:F thin films and fabricated thin film Si solar cells by plasma enhanced CVD(PECVD) on $SnO_2$:F thin films The cells were characterized by I-V measurement using AM1.5 spectra. Conversion efficiency of our cells were between 5.61% and 6.45%.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.467.2-467.2
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• 2014

유기태양전지는 친환경 에너지 소스로써 저가 대량 생산이 가능하고 특히 유연한 기판에 적용이 가능하여 많은 관심을 받고 있다. 그럼에도 불구하고 기존에 사용되는 indium tin oxide (ITO)의 사용으로 인한 유연성 부족으로 대체되는 투명전극의 개발이 요구되어지고 있다. 이로 인해 carbon nanotubes, graphene, thin metals, metal grids, and conducting polymers 등이 연구되고 있으며, 이중 Silver nanowires (Ag NWs)를 이용한 방식도 많은 관심과 함께 전기광학적 특성에 대한 연구가 진행되고 있다. 하지만 유기전자소자에 사용되기에는 몇 가지 문제점이 발생하는데 이를 해결하기 위한 노력이 다양하게 이루어지고 있다. 특히 다양한 물질의 혼합을 통해 개선하고자 하는 노력이 증가하고 있는데 적층구조의 전도성필름 형성을 통해 ITO-free OPVs에서 Ag nanowire를 transparent conductive electrodes로 활용하였다. Ag NWs층과 PEDOT:PSS layer의 복합화를 통해 저가의 ITO-free OPVs용 transparent anodes가 가능해졌다.