• Journal of the Korean Ceramic Society
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• v.45 no.1
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• pp.30-35
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• 2008

In this paper, CdS/Cd(Cu)S thin films and diodes were manufactured via a chemical bath deposition (CBD) process, and the effects of $NH_4Cl$ and TEA(triethylamine) on the properties of the films were examined. The addition of $NH_4Cl$ significantly increased the thickness of the CdS and Cd(Cu)S films, however, the addition of TEA decreased the thickness in both cases slightly. The addition of $NH_4Cl$ along with TEA increased the film thickness more effectively compared to the addition of only $NH_4Cl$. The thickness of the CdS film prepared from an aqueous solution of 0.007 M $CdSO_4$, 1.3 M $NH_4OH$, 0.03 M $SC(NH_2)_2$, 0.0001 M TEA and 0.03 M $NH_4Cl$ was 310 nm. Dark resistivity of the CdS film was $1.2{\times}10^3\;{\Omega}cm$ and the photo resistivity with $500\;W/cm^2$ irradiation of white light was $20{\Omega}cm$. The Cd(Cu)S/CdS thin film diodes prepared by CBD showed good rectifying characteristics.

• Journal of IKEEE
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• v.23 no.2
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• pp.375-379
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• 2019

$ZnO-SnO_2(ZTO)$ was deposited by RF magnetron sputtering using a ceramic target whose Zn atomic ratio to Sn is 2:1 as a target, and the crystal structure variation with thermal treats was investigated. Transparent thin film transistors (TTFT) were fabricated using the ZTO films as active layers. About 100 nm-thick $Si_3N_4$ film grown on 100 nm-thick $SiO_2$ film was adopted as gate dielectrics. The mobility, threshold voltage, $I_{on}/I_{off}$, and interface trap density were obtained from the transfer characteristics of ZTO TTFTs. The effects of substrate temperature, and post-annealing on the property variation of ZTO TTFT were analyzed.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1249-1252
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• 2007

We have fabricated 3.5” transparent AM-OLED panel driven by PEALD grown ZnO TFT. The performance of ZnO thin film transistor was improved by adapting top gate structure, protection layer for ZnO from photolithography process, optimizing temperature and plasma power of ZnO growth process. The ZnO-TFT has a mobility of $8.9cm^2/V.s$, a subthreshold swing of 0.95V, and an on/off ratio of $10^7$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1107-1113
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• 2004

Dry film method for large size of PDP(Plasma Display Panel) module has been actively investigated. This method for lead-free transparent dielectric formation depends on green sheet technology. By adjusting the composition of transparent dielectric powders and organics, uniformly dispersed slurry was fabricated, Viscosity of the slurry exhibited pseudoplastic behavior for tape casting, Cast green sheets were tested under tensile condition at room temperature. It was found that the increase in transparent dielectric powder and binder ratio leads to decrease in strain to failure of green sheets from 120 % to 34 % and from 255 % to 4 %, respectively. Tensile strength of green sheets decreased abruptly with increase of transparent dielectric powder ratio, with minimum at 0.13 MPa. On the other hand, tensile strength increased continuously from 0.1 MPa to 2.4 MPa with increase of binder ratio. The green sheets were attached on the glass substrate and heated by following firing schedule. As a result, the best result was obtained when fired at 580 $^{\circ}C$ for 15 min and had transmittance of 78 % in visible range 550 nm.

• Current Photovoltaic Research
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• v.5 no.4
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• pp.135-139
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• 2017

We fabricated two different transparent conducting oxide thin films of ZnO doped with Ga ($Ga_2O_3$ 0.9 wt%) as well as Al ($Al_2O_3$ 2.1 wt%) (GAZO) and ZnO doped only with Al ($Al_2O_3$ 3 wt%) (AZO). It was investigated how it affects the moisture resistance of the transparent electrode. In addition, $Cu(In,Ga)Se_2$ thin film solar cells with two transparent oxides as front electrodes were fabricated, and the correlation between humidity resistance of transparent electrodes and device performance of solar cells was examined. When both transparent electrodes were exposed to high temperature distilled water, they showed a rapid increase in sheet resistance and a decrease in the fill factor of the solar cell. However, AZO showed a drastic decrease in efficiency at the beginning of exposure, while GAZO showed that the deterioration of efficiency occurred over a long period of time and that the long term moisture resistance of GAZO was better.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.243.2-243.2
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• 2015

We report a high-performing nanoscale NiO thin film grown by thermal oxidation of sputtered Ni film. The structural, physical, optical and electrical properties of nanoscale NiO were comprehensively investigated. A quality transparent heterojunction (NiO/ZnO) was formed by large-area applicable sputtering deposition method that has an extremely low saturation current of 0.1 nA. Considerable large rectification ratio of more than 1000 was obtained for transparent heterojunction device. Mott-Schottky analyses were applied to develop the interface of NiO and ZnO by establishing energy diagrams. Nanoscale NiO has the accepter carrier concentration of the order of 1018 cm-3. Nanoscale NiO Schottky junction device properties were comprehensively studied using room temperature impedance spectroscopy.

• Journal of the Semiconductor & Display Technology
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• v.12 no.1
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• pp.41-45
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• 2013

IGZO transparent conductive thin films were widely used as transparent electrode of optoelectronic devices. We have studied the optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 25, 50, 75and 100 W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The thin films were electrically characterized by high mobility above $13.4cm^2/V{\cdot}s$, $7.0{\times}10^{19}cm^{-3}$ high carrier concentration and $6{\times}10^{-3}{\Omega}-cm$ low resistivity. By the studies we found that IGZO transparent thin film can be used as transparent electrodes in electronic devices.

• Journal of the Korean Ceramic Society
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• v.31 no.4
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• pp.436-447
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• 1994

ZnO transparent conducting thin film, which is a strong candidate for a transparent electrical contact in optoelectronic devices, was prepared by the vapour spraying method on the slide glass in nitrogen ambient at the atmospheric pressure. The structural, optical and electrical properties of films show a strong dependence on substrate temperature, and the optimum range of deposition temperature existed to obtain TCO(Transparent Conducting Oxide) films. At the higher temperatures, milky films were obtained. In such optimum range, the bandgap in ZnO films was determined from the spectral dependence of absorption coefficient and electrical characteristics were characterized with by the Hall mobility and carrier concentration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.4
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• pp.296-301
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• 2019

A multiple-electrode-type electronic paper film can implement a single color and control the transparency, as it has multiple electrodes in one cell. Therefore, it can be used as a transparent display. In this paper, we explain the structure and driving method of a transparent electronic paper display, and then propose a control method of transmittance. Subsequently, we verify the theory by measuring the transmittance via experiment. Thus, by changing the manner of applying the voltage to three lower electrodes and one upper electrode, transmittance in eight cases could be realized. It was confirmed that the transmittance derived from the experiment could be controlled from a minimum of 6.75% to a maximum of 71.18%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.530-534
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• 2017

Transparent film heaters employing silver nanowires (Ag NWs) have attracted increasing attention because of their widespread applications. However, the low thermal resistance of Ag NWs limits the maximum operating temperature of the Ag NW film heater. In this study, Ag NW film heaters with high mechanical and thermal stability were successfully developed. The thermal power-out characteristics of the Ag NW heaters were investigated as a function of the Ag NW density. The results revealed that the prepared flexible Ag NW heater possessed high thermal stability over $190^{\circ}C$ owing to ZnO encapsulation. This indicates that the Ag NW film with excellent thermal stability have remarkably high potential for use as electrodes in film heaters operating at high temperatures.