• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.923-929
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• 2008

On the piezoelectric polymer, PVDF (poly vinylidene fluoride), the transparent conducting oxide (TCO) electrode material thin film was deposited by roll to roll sputtering process mentioned as a mass product-friendly process for display application. The deposition method for ITO Indium Tin Oxides) as our TCO was DC magnetron sputtering optimized for polymer substrate with the low process temperature. As a result, a high transparent and good conductive ITO/PVDF film was prepared. During the process, especially, the gas mixture ratio of Ar and Oxygen was concluded as an important factor for determining the film's physical properties. There were the optimum ranges for process conditions of mixture gas ratio for ITO/PVDF From these results, the doping mechanism between the oxygen atom and the metal element, Indium or Tin was highly influenced by oxygen partial pressure condition during the deposition process at ambient temperature, which gives the conductivity to oxide electrode, as generally accepted. With our studies, the process windows of TCO for display and other application can be expected.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.525-528
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• 2001

ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering(FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of $O_2$ gas and substrate temperature. When the $O_2$ gas rate of 0.3 and substrate temperature $200^{\circ}C$, ZnO:Al thin film had strongly oriented c-axis and lower resistivity( < $10^{-4}{\Omega}-cm$ ).

• Korean Journal of Optics and Photonics
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• v.22 no.4
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• pp.170-178
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• 2011

The spectroscopic ellipsometric constants are analyzed to determine the thickness and the complex refractive index of a film coated on a semi-transparent substrate, with the reflection from the backside of the substrate properly considered. Expressions representing the effect of the backside reflection on ellipsometric constants are derived using the thickness and the complex refractive index of the substrate. The thickness and the complex refractive of an ITO thin film coated on a glass substrate are obtained by using this method. The results agree quite well with the ones obtained by following the conventional modeling procedure where the backside reflection is neglected during ellipsometric measurement and analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.47-47
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• 2008

P-type transparent semiconductor $SrCu_2O_2$ thin films have been prepared by RF sputtering using low-alkali glass for LCD and quartz as substrates. Single phase of $SrCu_2O_2$ powder was obtained by heating a stoichiometric mixture of CuO and $SrCO_3$ at 1223K for 96h under N2 gas flow, and target was fabricated at 1243K for 24h. Room temperature conductivity of the sintered body was about 0.02S/cm, and the activation energy in the temperature range of $-50^{\circ}C$~RT and RT~$150^{\circ}C$ were 0.18eV, 0.07eV, respectively. Effects of deposition pressure and post-annealing temperature on the electrical and optical properties of the obtained thin film have been investigated.

• Korean Journal of Materials Research
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• v.27 no.12
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• pp.695-698
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• 2017

ZnMgBeGaO/Ag/ZnMgBeGaO multilayer structures were sputter grown and characterized in detail. Results indicated that the electrical properties of the ZnMgBeGaO films were significantly improved by inserting an Ag layer with proper thickness (~ 10 nm). Structures with thicker Ag films showed much lower optical transmission, although the electrical conductivity was further improved. It was also observed that the electrical properties of the multilayer structure were sizably improved by annealing in vacuum (~35 % at $300^{\circ}C$). The optimum ZnMgBeGaO(20nm)/Ag(10nm)/ZnMgBeGaO(20nm) structure exhibited an electrical resistivity of ${\sim}2.6{\times}10^{-5}{\Omega}cm$ (after annealing), energy bandgap of ~3.75 eV, and optical transmittance of 65 % ~ 95 % over the visible wavelength range, representing a significant improvement in characteristics versus previously reported transparent conductive materials.

• Current Photovoltaic Research
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• v.10 no.1
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• pp.28-32
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• 2022

We investigated the optical and electrical characteristics of ITO/Ag/ITO (IAI) 3-layer thin films prepared by using RF/DC sputtering. To measure the thickness of all thin film samples, we used scanning electron microscopy. As a function of Ag thickness we characterized the optical transmittance and sheet resistance of the IAI samples by using UV-Visible spectroscopy and Hall measurement system, respectively. While the thickness of both ITO thin films in the 3-layered IAI samples were fixed at 50 nm, we varied Ag layer thickness in the range of 0 nm to 11 nm. The optical transmittance and sheet resistance of the 3-layered IAI thin films were found to vary strongly with the thickness of Ag film in the ITO (50 nm)/Ag(t₀)/ITO (50 nm) thin film. For the best transparent conducting oxide (TCO) electrode, we obtained a 3-layered ITO (50 nm)/Ag (t₀ = 8.5 nm)/ITO (50 nm) that showed an avrage optical transmittance, AVT = 90.12% in the visible light region of 380 nm to 780 nm and the sheet resistance, R_□ = 7.24 Ω/□.

• Journal of information and communication convergence engineering
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• v.3 no.4
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• pp.179-183
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• 2005

A photodiode capable of obtaining a sufficient photo/ dark current ratio at both forward bias state and reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as an insulator barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. A good quality alumina $(Al_2O_3)$ film is formed by oxidation of aluminum film using electrolyte solution of succinic acid. Alumina is used as a potential barrier between amorphous silicon and aluminum. It controls dark-current restriction. In case of photodiodes made by changing the formation condition of alumina, we can obtain a stable dark current $(\~10^{-12}A)$ in alumina thickness below $1000{\AA}$. At the reverse bias state of the negative voltage in ITO (Indium Tin Oxide), the photo current has substantially constant value of $5{\times}10^{-9}$ A at light scan of 100 1x. On the other hand, the photo/dark current ratios become higher at smaller thicknesses of the alumina film. Therefore, the alumina film is used as a thin insulator barrier, which is distinct from the conventional concept of forming the insulator barrier layer near the transparent conduction film. Also, the structure with the insulator thin barrier layer formed near the lower electrode, opposed to the ITO film, solves the interface problem of the ITO film because it provides an improved photo current/dark current ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.417-417
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• 2009

Although a transparent conductive film (TCF) belongs to essential supporting materials for many device applications such as touch screens, flat panel displays, and sensors, a conventional transparent conductive material, indium-tin oxide (ITO), suffers from considerable drawback because the price of indium has soared since 2001. Despite a recent falloff, a demand of ITO is expected to increase sharply in the future due to the trend of flat panel display technologies toward flexible, paper-like features. There have been recently extensive studies to replace ITO with new materials, in particular, carbon nanotubes (CNTs) since CNTs possess excellent properties such as flexibility, electrical conductivity, optical transparency, mechanical strength, etc., which are prerequisite to TCFs. This study fabricated TCFs with single-walled carbon nanotubes (SWCNTs) produced by arc discharge. The SWCNTs were dispersed in water with a surfactant of sodium dodecyl benzene sulfonate (NaDDBS) under sonication. Carbon black and fullerene nanoparticles were added to the SWCNT-dispersed solution to enhance contact resistance between CNTs. TCFs were manufactured by a filtration and transfer method. TCFs added with carbon black and fullerene nanoparticles were characterized by scanning electron microscopy (SEM), UV-vis spectroscopy (optical transmittance), and four-point probe measurement (sheet resistance).

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.49-52
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• 2009

Practical building integrated photovoltaic system built by Kolon E&C has been monitored and evaluated with respect to power generation, which was installed in Deokpyeong Eco Service Area in Deokpyeong, Gyeonggi, Korea. The amorphous silicon transparent PV module in this BIPV system has 44Wp in power output per unit module and 10% of transmittance with the unit dimension with $980mm{\times}950mm$. The BIPV system was applied as the skylight in the main entrance of the building. This study provided the database for the practical application of the transparent thin-film PV module for BIPV system through 11 month monitoring as well as various statistical analyses such as monthly power output and insolation. Average monthly power output of the system was 52.9kWh/kWp/month which is a 60% of power output of the previously reported data obtained under $30^{\circ}$of an inclined PV module facing south(azimuth=0). This lower power output can be explained by the installation condition of the building facing east, west and south, which was resulted from the influence of azimuth.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.34-35
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• 2006

Transparent ZnO thin film transistor (TFT) is fabricated on the glass substrates. The device consists of a high mobility intrinsic ZnO as a semiconductor active channel, Ga doped ZnO (GZO) as an electrode, $HfO_2$ as a gate insulator. GZO and $HfO_2$ layers are prepared by using a pulsed laser deposition and intrinsic ZnO layers are fabricated by using an rf-magnetron sputtering, respectively. The transparent TFT is highly transparent (> 87 %) and exhibits n-channel, enhancement mode behavior with a field-effect mobility as large as $11.7\;cm^2/Vs$ and a drain current on-to-off ratio of about $10^5$.