• 한국재료학회지
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• 제3권2호
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• pp.193-196
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• 1993

A procedure for preparing cross-sectional specimens for transmission electron microscopy(TEM)by focused ion beam(FIB)milling of specific regions of semiconductor devices is outlined. This technique enables TEM specimens to be pripared at precisely preselected area. In-situ #W thin film deposition on the top surface of desired site is complementally used to secure the TEM specimens to be less wedge shaped, which is main shortcoming of previous FIB-assisted TEM sample preparation technique. This technique is quite useful for the TEM sample priparation for fault finding and the characterization of fabrication process associated with submicron contact technologies.

• Advances in nano research
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• 제2권4호
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• pp.211-217
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• 2014

The self-assembled strain-induced sub-micrometric islands and nanostructures are grown from In-As-Sb-P quaternary liquid phase on InAs (100) substrates in Stranski-Krastanow growth mode. Two samples are under consideration. The first sample consists of unencapsulated islands and lens-shape quantum dots (QDs) grown from expressly inhomogeneous liquid phase. The second sample is an n-InAs/p-InAsSbP heterostructure with QDs embedded in the p-n junction interface. The morphology, size and shape of the structures are investigated by high-resolution scanning electron (SEM) and transmission electron (TEM) microscopy. It is shown that islands, as they decrease in size, undergo shape transitions. Particularly, as the volume decreases, the following succession of shape transitions are detected: sub-micrometric truncated pyramid, {111} facetted pyramid, {111} and partially {105} facetted pyramid, completely unfacetted "pre-pyramid", hemisphere, lens-shaped QD, which then evolves again to nano-pyramid. A critical size of $5{\pm}2nm$ for the shape transformation of InAsSbP-based lens-shaped QD to nano-pyramid is experimentally measured and theoretically evaluated.

• Journal of Magnetics
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• 제16권4호
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• pp.435-439
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• 2011

In this work, we prepared Fe-Ni alloy nanopowders by wire electrical explosion in deionized water and ethanol. Particles size and morphology of the as-synthesized nanoparticles prepared in water and ethanol were observed by transmission electron microscopy. In both cases, the as-synthesized nanoparticles were in nearly spherical shape and their size distribution was broad. The particles prepared in the water were in core-shell structure due to the oxidation of Fe element. X-ray diffraction was used to analyze the phase of the nanopowders. It showed that the nanopowders prepared in water had ${\gamma}$-Fe-Ni solid solution and FeO phase. The samples obtained in ethanol were in two phases of Fe-Ni solid solution, ${\gamma}$-Fe-Ni and ${\alpha}$-Fe-Ni. Bulk samples were made from the as-synthesized nanopowders by spark plasma sintering at $1000^{\circ}C$ for 10 min. Structure of the bulk sample was observed by scanning electron microscope. Magnetic properties of the as-synthesized nanopowders and the bulk samples were investigated by vibrating sample magnetometer. The hysteresis loop of the assynthesized nanopowders and the sintered bulk samples revealed a ferromagnetic characteristic.

• Applied Microscopy
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• 제29권4호
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• pp.405-415
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• 1999

일반적으로 고분자 미세구조 관찰은 microtomming, solution casting, carbon replica, staining법 등을 이용하여 시료를 전처리한 시료를 TEM을 이용하여 관찰한다. 이러한 시편 전처리 법은 높은 재연성 등으로 널리 이용되고 있으나 기기 의존적이거나 시편전처리 과정이 복잡한 단점이 있다. 본 연구는 주사전자현미경을 이용한 고분자미세구조 관찰 및 이를 위한 시편준비법에 관한 것이다. 이를 위하여 본 연구에서는 기존에 제한된 화학적에칭법을 개선하여 각종 polyolefin 종류 및 형상에 맞게 전처리하여 SEM을 이용한 고분자 미세구조 연구를 수행하였다. 본 연구를 통하여 과망간산 에칭방법이 주사전자현미경을 이용한 polyolefin 미세구조 관찰에 적합함을 알 수 있었으며, 에칭조건은 시료의 종류와 관찰대상에 맞게 과망간산/인산, 과망간산/인산/황산 등의 조성과 etchant 의 함량비, 에칭시간의 단순한 조절로 가능하다. 본 연구의 에칭법을 이용하여 관찰한 고분자의 미세구조는 iPP 구정의 characterization, 라멜라 특성연구, 고분자 blend 등 기존 연구의 관찰결과를 잘 재연하고 있어 고분자의 모폴로지 특성 뿐만 아니라 blend와 film등 상업적 제품 연구 및 개발에 유용한 방법임을 알 수 있었다.

• Applied Microscopy
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• 제41권3호
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• pp.215-222
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• 2011

We discuss the experimental procedure for extracting reliable phase information from a defocus series of transmission electron microscopy (TEM) dark-field images using the transport of intensity equation (TIE). Taking InGaN/GaN multi-quantum well light-emitting diode as a model system, various factors affecting the final result of reconstructed phase such as TEM sample preparation, TEM imaging condition, image alignment, the correction of defocus values and the use of high frequency pass filter are evaluated. The obtained phase of wave function was converted to the geometric phase of the corresponding lattice planes, which was then used for the two-dimensional mapping of lattice strain following the dark-field inline holography (DIH) routine. The strain map obtained by DIH after optimized image processing is compared with that obtained by the geometric phase analysis of high resolution TEM (HRTEM) image, manifesting that DIH yields more accurate and reliable strain information than HRTEM-based GPA.

• 한국분말재료학회지
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• 제22권2호
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• pp.116-121
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• 2015

$WS_2$-W-WC embedded carbon nanofiber composites were fabricated by using electrospinning method for use in high-performance supercapacitors. In order to obtain optimum electrochemical properties for supercapacitors, $WS_2$ nanoparticles were used as precursors and the amounts of $WS_2$ precursors were controlled to 4 wt% (sample A) and 8 wt% (sample B). The morphological, structural, and chemical properties of all samples were investigated by means of field emission photoelectron spectroscopy, transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. These results demonstrated that the embedded phases of samples A and B were changed from $WS_2$ to $WS_2$-W-WC through carbothermal reaction during carbonization process. In particular, sample B presented high specific capacitance (~119.7 F/g at 5 mV/s), good high-rate capacitance (~60.5%), and superb cycleability. The enhanced electrochemical properties of sample B were explained by the synergistic effect of the using 1-D structure supports, increase of specific surface area, and improved conductivity from formation of W and WC phases.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.62-62
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• 2015

In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4 gas is decomposed into fluorine ions by ICP-RIE and then fluorine ions will effect the AlGaN/GaN interface to inhibit the electron transport of two dimension electron gas (2DEG) and increase channel resistance. The CF4 plasma method neither like the recessed type which have to utilize Cl2/BCl3 to etch semiconductor layer nor ion implantation needed high power to implant ions into semiconductor. Both of techniques will cause semiconductor damage. In the experiment, the CF4 treatment time are 0, 50, 100, 150, 200 and 250 seconds. It was found that the devices treated 100 seconds showed best electric performance. In order to prove fluorine ions existing and CF4 plasma treatment not etch epitaxial layer, the secondary ion mass spectrometer confirmed fluorine ions truly existing in the sample which treatment time 100 seconds. Moreover, transmission electron microscopy showed that the sample treated time 100 seconds did not have etch phenomena. Atomic layer deposition is used to grow Al2O3 with thickness 10, 20, 30 and 40 nm. In electrical measurement, the device that deposited 20-nm-thickness Al2O3 showed excellent current ability, the forward saturation current of 210 mA/mm, transconductance (gm) of 44.1 mS/mm and threshold voltage of 2.28 V, ION/IOFF reach to 108. As IV concerning the breakdown voltage measurement, all kinds of samples can reach to 1450 V.

• 한국결정성장학회지
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• 제6권2호
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• pp.213-219
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• 1996

$300^{\circ}C$ 이상의 고온에서 동작하는 전통적인 $SnO_{2}$ 또는 ZnO와 같은 전통적인 세라믹 가스 센서보다 훨씬 낮은 온도에서 동작이 가능한 $Pt/MoO_{3}$ 가스 센서를 pellet 형으로 제작하였다. $Pt/MoO_{3}$ 가스 센서의 하고 온도(calcination temperature)에 따른 표면구조의 변화와 결정구조의 변화가 투과전자현미경(transmission electron microscopy)과 X-선 회절시험에 의하여 조사되었다. 투과전자현미경 사진으로부터 하소 온도가 증가할수록 시편에서 $PtCl_{x}$에서 Cl의 양이 줄어드는 것과 Pt위에 $MoO_{3}$의 얇은 막(overlayer)이 형성되어 있다는 것을 보여준다. 가스 흡착 시험 결과 표면구조의 변화에 따라서 시편의 수소 저장 능력이 변화함을 보여주었다. $50^{\circ}C$와 $150^{\circ}C$에서 수소가스 감지도를 측정한 결과 매우 우수한 결과를 보여 주었다.

• 한국진공학회지
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• 제7권1호
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• pp.35-42
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• 1998

100keV $O^+$이온 빔에 의해 형성된 separation by implanted oxygen(SIMOX) silicon on insulator (SOI)의 열처리 전후의 계면 구조를 high resolution transmission electron microscopy(HRTEM)을 이용하여 관찰하였다. 실리콘 주입 온도 $550^{\circ}C$에서 ~$5\times 10^{17}\textrm{cm}^{-2}O^+$를 주입한 직후의 계면은 매우 거칠고 산화물 석출, stacking fault, coesite $SiO_2$ 상 석출물 등 여러 가지 형태의 결함들을 가지고 있었다. 반면, 이것을 $1300^{\circ}C$에서 열처리한 후의 계면은 매우 편편하고 잘 정의된 계면으로 변하였다. 열처리후의 계면은 HRTEM을 통해서 3keV$O_2^\;+$이온 빔에 의해 형성된 산화막 계면, 그리고 게이트 산화막으로 사용되는 ~ 6nm열 산화막 계면과 비교하여 볼 때 비슷한 수준의 roughness를 보여 주었다.

• 한국재료학회지
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• 제22권8호
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• pp.403-408
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• 2012

A sample of ultra low carbon IF steel was processed by six-layer stack accumulative roll-bonding (ARB) and annealed. The ARB was conducted at ambient temperature after deforming the as-received material to a thickness of 0.5 mm by 50% cold rolling. The ARB was performed for a six-layer stacked, i.e. a 3 mm thick sheet, up to 3 cycles (an equivalent strain of ~7.0). In each ARB cycle, the stacked sheets were, first, deformed to 1.5 mm thickness by 50% rolling and then reduced to 0.5 mm thickness, as the starting thickness, by multi-pass rolling without lubrication. The specimen after 3 cycles was then annealed for 0.5 h at various temperatures ranging from 673 to 973 K. The microstructural evolution with the annealing temperature for the 3-cycle ARB processed IF steel was investigated in detail by transmission electron microscopy observation. The ARB processed IF steel exhibited mainly a dislocation cell lamella structure with relatively high dislocation density in which the subgrains were partially observed. The selected area diffraction (SAD) patterns suggested that the misorientation between neighboring cells or subgrains was very small. The thickness of the grains increased in a gradual way up to 873 K, but above 898 K it increased drastically. As a result, the grains came to have an equiaxed morphology at 898 K, in which the width and the thickness of the grains were almost identical. The grain growth occurred actively at temperatures above 923 K.