• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.420-420
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• 2013

We investigated oxygen plasma effect on defect states near the interface of AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on a silicon substrate. After the plasma treatment, electrical properties were evaluated using a frequency dependant Capacitance-Voltage (C-V) and a temperature dependant C-V measurements, and a deep level transient spectroscopy (DLTS) method to study the change of defect densities. In the depth profile resulted from the temperature dependant C-V, a sudden decrease in the carrier concentration for two-dimensional electron gas (2DEG) nearby 250 K was observed. In C-V measurement, the interface states were improved in case of the oxygen-plasma treated samples, whereas the interface was degraded in case of the nitrogen-plasma treated sample. In the DLTS measurement, it was observed the two kinds of defects well known in AlGaN/GaN structure grown on sapphire substrate, which have the activation energies of 0.15 eV, 0.25 eV below the conduction band. We speculate that this defect state in AlGaN/GaN on the silicon substrate is caused from the decrease in 2DEG's carrier concentrations. We compared the various DLTS signals with filling pulse times to identify the characteristics of the newly found defect. In the filling pulse time range under the 80 us, the activation energies changed as the potential barrier model. On the other hand, in the filling pulse time range above the 80 us, the activation energies changed as the extended potential model. Therefore, we suggest that the found defect in the AlGaN/GaN/Si structure could be the extended defect related with AlGa/N/GaN interface states.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.678-686
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• 2001

Origins for the transconductance dispersion and the gate leakage current in a GaAs metal semiconductor field effect transistor were found using capacitance deep-level transient spectroscopy (DLTS) measurements. In DLTS spectra, we observed two surface states with thermal activation energies of 0.65 $\times$ 0.07 eV and 0.88 $\times$ 0.04 eV and an electron trap EL2 with thermal activation energy of 0.84 $\times$ 0.01 eV. Transconductance was decreased in the frequency range of 5.5 Hz ~ 300 Hz. The transition frequency shifted to higher frequencies with the increase of temperature and the activation energy for the change of the transition frequency was determined to be 0.66 $\times$ 0.02 eV. From the measurements of the gate leakage current as a function of the device temperature, the forward and reverse currents are coincident with each other below gate voltages lower than 0.15 V, namely Ohmic behavior between gate and source/drain electrodes. The activation energy for the conductance of electrons on the surface of MESFET was 0.63 $\times$ 0.01 eV. Comparing activation energies obtained by different measurements, we found surface states H1 caused the transconductance dispersion and the fate leakage current.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.314-314
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• 2012

The dilute magnetic semiconductors (DMS) have been developed to multi-functional electro-magnetic devices. Specially, the Si based DMS formed by ion implantation have strong advantages to improve magnetic properties because of the controllable effects of carrier concentration on ferromagnetism. In this study, we investigated the deep level states of Fe- and Co-ions implanted Si wafer during rapid thermal annealing (RTA) process. The p-type Si (100) wafers with hole concentration of $1{\times}10^{16}cm^{-3}$ were uniformly implanted by Fe and Co ions at a dose of $1{\times}10^{16}cm^{-2}$ with an energy of 60 keV. After RTA process at temperature ranges of $500{\sim}900^{\circ}C$ for 5 min in nitrogen ambient, the Au electrodes with thickness of 100 nm were deposited to fabricate a Schottky contact by thermal evaporator. The surface morphology, the crystal structure, and the defect state for Fe- and Co- ion implanted p-type Si wafers were investigated by an atomic force microscopy, a x-ray diffraction, and a deep level transient spectroscopy, respectively. Finally, we will discuss the physical relationship between the electrical properties and the variation of defect states for Fe- and Co-ions implanted Si wafer after RTA.

• Journal of Electrical Engineering and Technology
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• v.10 no.1
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• pp.436-442
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• 2015

In this paper, we develop an indoor localization device which embeds localization information into indoor light-emitting-diodes (LED) lighting systems. The key idea of our device is the use of the newly proposed "bit stuffing method". Through the use of stuff bits, our device is able to measure signal strengths even in transient states, which prohibits interference between lighting signals. The stuff bits also scatter the parts of the signal where the LED is turned on, thus provides quality indoor lighting. Additionally, for the indoor localization system based on RSSI and TDM to be practical, we propose methods for the control of LED lamps and compensation of received signals. The effectiveness of the proposed scheme is validated through experiments with a low-cost implementation including an indoor navigation task.

• Journal of the Korean Society of Propulsion Engineers
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• v.8 no.3
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• pp.27-36
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• 2004

This paper has been conducted to design for pressure regulation system. to simulate for performance of turbo pump unit using AMESim(Advanced Modeling Environment for Simulation of Engineering Systems). With optimized of system, pressure regulation system has been confirmed dynamic characteristics of transient and steady states range based on static modeling of open type turbo pump fed engine system. These results can be utilized to verify for performance test facility of propulsion control system for analysis on control valves, review of the fundamental principle on the control logic and certificating engine feeding system.

• Bulletin of the Korean Chemical Society
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• v.24 no.8
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• pp.1075-1080
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• 2003

We have investigated femtosecond coherent vibrational motions of Zn(II)-5,15-diphenylporphyrin in toluene using chirp-controlled ultrashort pulses. The oscillatory features superimposed on the temporal profiles of the pump-probe transient absorption signal are affected by the chirping and energy of excitation pulses. Using chirp- and excitation energy-controlled femtosecond pulses, we are able to obtain information on the structural changes between the electronic ground and excited states based on a comparative analysis of the Fouriertransformed frequency-domain spectra retrieved from the oscillatory components with the ground state resonance Raman spectra and normal mode calculations.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.9
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• pp.33-43
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• 2011

Since the fuzzy neural network(FNN) is universal approximators, the development of FNN control systems have also grown rapidly to deal with non-linearities and uncertainties. However, the major drawback of the existing FNNs is that their processor is limited to static problems due to their feedforward network structure. This paper proposes the recurrent FNN(RFNN) for high performance and robust control of SynRM. RFNN is applied to speed controller for SynRM drive and model reference adaptive fuzzy controller(MFC) that combine adaptive fuzzy learning controller(AFLC) and fuzzy logic control(FLC), is applied to current controller. Also, this paper proposes speed estimation algorithm using artificial neural network(ANN). The proposed method is analyzed and compared to conventional PI and FNN controller in various operating condition such as parameter variation, steady and transient states etc.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2004.11a
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• pp.247-250
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• 2004

A ground resistance is a good index of performance in a grounding system, but it does not reflect the performance in transient states. Recently long vertical ground rods in urban areas are often installed. But because of the inductance of long ground rods the ground impedance at high frequency might be greater than its resistance at low frequency. In this paper, a ground impedance of deeply driven ground rod has been measured in the frequency range from 10 kHz to 50 MHz. As a result, the ground impedances of a deeply driven ground rods are almost constant at the frequency range less than 100 kHz. However at high frequency the ground impedance showed the strong frequency dependance.

• Journal of Power Electronics
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• v.10 no.5
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• pp.572-578
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• 2010

This paper discusses a transformerless shunt static compensator (STATCOM) based on a modular multilevel converter (MMC). It introduces a new time-discrete appropriate current control algorithm and a phase-shifted carrier modulation strategy for fast compensation of the reactive power and harmonics, and also for the balancing of the three-phase source side currents. Analytical formulas are derived to demonstrate the accurate mechanism of the stored energy balancing inside the MMC. Various simulated waveforms verify that the MMC based STATCOM is capable of reactive power compensation, harmonic cancellation, and simultaneous load balancing, while controlling and balancing all of the DC mean voltages even during the transient states.

• Proceedings of the KIEE Conference
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• 2007.04c
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• pp.150-152
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• 2007

The stator faults yield asymmetrical operation of induction machines, such as irregular current, torque pulsation, increased losses and decreased average torque. So it is necessary to detect the stator faults and develope the monitoring system for detecting faults including vibration and noise. This paper describes the method to analysis the induction motors with the stator winding inter-turn short for investigation of the asymmetrical operation during normal and transient states. And a simple method is used for the simulation and analysis of the induction machines with stator asymmetries. Finally, simulation results, finite element analysis and experimental ones are presented. The results can be useful for real-time on-line monitoring of an induction motor.