• Title/Summary/Keyword: Transient process

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New Approach for Transient Radiation SPICE Model of CMOS Circuit

  • Jeong, Sang-Hun;Lee, Nam-Ho;Lee, Jong-Yeol;Cho, Seong-Ik
    • Journal of Electrical Engineering and Technology
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    • v.8 no.5
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    • pp.1182-1187
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    • 2013
  • Transient radiation is emitted during a nuclear explosion and causes fatal errors as upset and latch-up in CMOS circuits. This paper proposes the transient radiation SPICE models of NMOS, PMOS, and INVERTER based on the transient radiation analysis using TCAD (Technology Computer Aided Design). To make the SPICE model of a CMOS circuit, the photocurrent in the PN junction of NMOS and PMOS was replaced as current source, and a latch-up phenomenon in the inverter was applied using a parasitic thyristor. As an example, the proposed transient radiation SPICE model was applied to a CMOS NAND circuit. The CMOS NAND circuit was simulated by SPICE and TCAD using the 0.18um CMOS process model parameter. The simulated results show that the SPICE results were similar to the TCAD simulation and the test results of commercial CMOS NAND IC. The simulation time was reduced by 120 times compared to the TCAD simulation.

Transient Improvement Algorithm in Digital Images

  • Kwon, Ji-Yong;Chang, Joon-Young;Lee, Min-Seok;Kang, Moon-Gi
    • Proceedings of the Korean Society of Broadcast Engineers Conference
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    • 2010.07a
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    • pp.74-76
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    • 2010
  • Digital images or videos are used in modern digital devices. The resolution of HDTV in digital broadcasting system is higher than that of previous analog systems. Also, mobile phone with 3G can provide images as well as video streaming services in realtime. In these circumstances, the visual quality of images has become an important factor. We can make image clear by transient improvement process that reduces transient in edges. In this paper, we present an transient improvement algorithm. The proposed algorithm improves edges by making smooth edge to steep edge. Before performing transient improvement algorithm, edge detection algorithm should be operated. Laplacian operator is used in edge detection, and the absolute value of it is used to calculate gain value. Then, local maximum and minimum values are computed to discriminate current pixel value to raise up or pull down. Compensating value that gain value multiplies with the difference between maximum (or minimum) value and current pixel value adds (or subtracts) to current pixel value. That is, improved signal is generated by making the narrow transient of edge. The advantage of proposed algorithm is that it doesn't produce shooting problem like overshoot or undershoot.

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Development and verification of PWR core transient coupling calculation software

  • Li, Zhigang;An, Ping;Zhao, Wenbo;Liu, Wei;He, Tao;Lu, Wei;Li, Qing
    • Nuclear Engineering and Technology
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    • v.53 no.11
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    • pp.3653-3664
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    • 2021
  • In PWR three-dimensional transient coupling calculation software CORCA-K, the nodal Green's function method and diagonal implicit Runge Kutta method are used to solve the spatiotemporal neutron dynamic diffusion equation, and the single-phase closed channel model and one-dimensional cylindrical heat conduction transient model are used to calculate the coolant temperature and fuel temperature. The LMW, NEACRP and PWR MOX/UO2 benchmarks and FangJiaShan (FJS) nuclear power plant (NPP) transient control rod move cases are used to verify the CORCA-K. The effects of burnup, fuel effective temperature and ejection rate on the control rod ejection process of PWR are analyzed. The conclusions are as follows: (1) core relative power and fuel Doppler temperature are in good agreement with the results of benchmark and ADPRES, and the deviation between with the reference results is within 3.0% in LMW and NEACRP benchmarks; 2) the variation trend of FJS NPP core transient parameters is consistent with the results of SMART and ADPRES. And the core relative power is in better agreement with the SMART when weighting coefficient is 0.7. Compared with SMART, the maximum deviation is -5.08% in the rod ejection condition and while -5.09% in the control rod complex movement condition.

Effects of transient thermo reflectance on the thermal responses of metal thin film exposed to ultrashort laser heating (극초단 펄스레이저 광이 입사된 금속박막의 열적반응 중 비정상반사율의 영향)

  • 박승호;국정진
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.11 no.4
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    • pp.528-536
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    • 1999
  • This work studies the effects of transient reflectance on the thermal responses of a metal(gold) thin-film during ultrashort laser heating. The heating process is calculated using the conventional conduction model (parabolic one-step: POS), parabolic two-step model (PTS) with and without variable properties, hyperbolic two-step model (HTS). Results from the HTS model are very similar to those from the PTS model, since the laser heating time in this study is greater than the electron relaxation time. PTS model with variable properties, however, results in totally different temperature profiles compared to those from POS models or calculation with constant properties. Transient reflectances are estimated from electron temperature distributions and based on the linear relationship between the electron temperature and complex dielectric constants. Reflectance of the front surface can be changed with respect to dielectric constants, while those of the rear surface remain unchanged.

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Analysis of Transient Magnetic Diffusion in a High-Temperature Superconductor Tube (고온 초전도체 관에서의 과도 자기확산 해석)

  • 설승윤;정성기
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.11
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    • pp.991-996
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    • 2002
  • Transient magnetic diffusion process in a melt-cast BSCCO-2212 tube is analyzed by an analytical method. The transient diffusion partial differential equation is transformed into an ordinary differential equation by integral method. The penetration depth of magnetic field into a superconducting tube is obtained by solving the differential equation numerically. The results show that the penetration depth as a function of time which is somewhat different from the results by Bean's critical state model. The reason of the difference between the present results and that of Bean's model is discussed and compared in this paper.

Transient Response of 1 DOF Complex Stiffness System via Hilbert-transform (힐버트 변환을 이용한 복소강성을 지니는 1자유도 시스템의 과도응답)

  • Bae, Seung-Hoon;Jeong, Weui Bong;Cho, Jin Rae
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2014.10a
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    • pp.298-299
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    • 2014
  • The solution of transient response of complex stiffness system was obtained using a green function of this system. To derive the green function, governing equation of this systems was expressed in Steady Space and solved by the diagonalization. The solution of this system are written as a convolution integral form. The result that are calculated by the numerical integration process for transient responses was showed properly.

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Analysis of Transient Magnetic Diffusion in a High-Temperature Superconductor Tube (고온 초전도체 관에서의 과도 자기확산 해석)

  • Seol, S.Y.;Jung, S.K.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.04a
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    • pp.41-45
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    • 2002
  • Transient magnetic diffusion process in a melt-cast BSCCO-2212 tube is analyzed by an analytical method. The transient diffusion equation is transformed into an ordinary differential equation by integral method. The penetration depth of magnetic field into a superconducting tube is obtained by solving the differential equation numerically. The results show that the penetration depth as a function of time which is somewhat different from the results by Bean's critical current model. The reason of the difference between the present results and that of Bean's model is discussed and compared in this paper.

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Low-ripple coarse-fine digital low-dropout regulator without ringing in the transient state

  • Woo, Ki-Chan;Yang, Byung-Do
    • ETRI Journal
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    • v.42 no.5
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    • pp.790-798
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    • 2020
  • Herein, a low-ripple coarse-fine digital low-dropout regulator (D-LDO) without ringing in the transient state is proposed. Conventional D-LDO suffers from a ringing problem when settling the output voltage at a large load transition, which increases the settling time. The proposed D-LDO removes the ringing and reduces the settling time using an auxiliary power stage which adjusts its output current to a load current in the transient state. It also achieves a low output ripple voltage using a comparator with a complete comparison signal. The proposed D-LDO was fabricated using a 65-nm CMOS process with an area of 0.0056 μ㎡. The undershoot and overshoot were 47 mV and 23 mV, respectively, when the load current was changed from 10 mA to 100 mA within an edge time of 20 ns. The settling time decreased from 2.1 ㎲ to 130 ns and the ripple voltage was 3 mV with a quiescent current of 75 ㎂.

Inorganic Materials and Process for Bioresorbable Electronics

  • Seo, Min-Ho;Jo, Seongbin;Koo, Jahyun
    • Journal of Semiconductor Engineering
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    • v.1 no.1
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    • pp.46-56
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    • 2020
  • This article highlights new opportunities of inorganic semiconductor materials for bio-implantable electronics, as a subset of 'transient' technology defined by an ability to physically dissolve, chemically degrade, or disintegrate in a controlled manner. Concepts of foundational materials for this area of technology with historical background start with the dissolution chemistry and reaction kinetics associated with hydrolysis of nanoscale silicon surface as a function of temperature and pH level. The following section covers biocompatibility of silicon, including related other semiconductor materials. Recent transient demonstrations of components and device levels for bioresorbable implantation enable the future direction of the transient electronics, as temporary implanters and other medical devices that provide important diagnosis and precisely personalized therapies. A final section outlines recent bioresorbable applications for sensing various biophysical parameters, monitoring electrophysiological activities, and delivering therapeutic signals in a programmed manner.

Step Response of RF Plasma in Carbon Tetrafluoride($CF_4$)

  • So, Soon-Youl;Akinori Oda;Hirotake Sugawara;Yosuke Sakai
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.930-933
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    • 2000
  • To understand the behavior of electron, ions and radicals on radio-frequency non-equilibrium plasma, it is necessary to know the basic information about its fundamental properties and reactions. Especially, the transient response of radio-frequency plasma has an important means of controlling selective etch rates and investigating the stability of a plasma chemical process. In this paper, we present the results of periodic steady-state behavior and transient behavior carbon Tetrafluoride(CF$_4$) discharge at 0.2 Torr in a 2 cm gap parallel-plate. After the number densities of charged particles became steady-state, the applied voltage was increased or decreased in an instant and the transient behavior of charged particles and radicals was investigated from one steady-state to the next steady state.

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