Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2000.07a
- /
- Pages.930-933
- /
- 2000
Step Response of RF Plasma in Carbon Tetrafluoride($CF_4$ )
- So, Soon-Youl (Division of Electronics and Information Engineering) ;
- Akinori Oda (Division of Electronics and Information Engineering) ;
- Hirotake Sugawara (Division of Electronics and Information Engineering) ;
- Yosuke Sakai (Division of Electronics and Information Engineering)
- Published : 2000.07.01
Abstract
To understand the behavior of electron, ions and radicals on radio-frequency non-equilibrium plasma, it is necessary to know the basic information about its fundamental properties and reactions. Especially, the transient response of radio-frequency plasma has an important means of controlling selective etch rates and investigating the stability of a plasma chemical process. In this paper, we present the results of periodic steady-state behavior and transient behavior carbon Tetrafluoride(CF