Step Response of RF Plasma in Carbon Tetrafluoride($CF_4$)

  • So, Soon-Youl (Division of Electronics and Information Engineering) ;
  • Akinori Oda (Division of Electronics and Information Engineering) ;
  • Hirotake Sugawara (Division of Electronics and Information Engineering) ;
  • Yosuke Sakai (Division of Electronics and Information Engineering)
  • Published : 2000.07.01

Abstract

To understand the behavior of electron, ions and radicals on radio-frequency non-equilibrium plasma, it is necessary to know the basic information about its fundamental properties and reactions. Especially, the transient response of radio-frequency plasma has an important means of controlling selective etch rates and investigating the stability of a plasma chemical process. In this paper, we present the results of periodic steady-state behavior and transient behavior carbon Tetrafluoride(CF$_4$) discharge at 0.2 Torr in a 2 cm gap parallel-plate. After the number densities of charged particles became steady-state, the applied voltage was increased or decreased in an instant and the transient behavior of charged particles and radicals was investigated from one steady-state to the next steady state.

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