• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.1
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• pp.1-11
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• 1999

Hyrdogenated amorphous silicon thin film transistors are used as a pixel switching device of TFT-LCDs and very active research works on a-Si:H TFTs are in progress. Further development of the technology based on a-Si:H TFTs depends on the increased understanding of the device physics and the ability to accurately simulate the characteristics of them. A two-dimensional device simulator based on the realistic and flexible physical models can guide the device designs and their optimizations. A non-uniform finite-difference TFT Simulation Program, TFT2DS has been developed to solve the electronic transport equations for a-Si:H TFTs. In TFT2DS, many of the simplifying assumptions are removed. The developed simulator was used to calculate the transfer and output characteristics of a-Si:H TFTs. The measured data were compared with the simulated ones for verifying the validity of TFT2DS. Also the transient behaviors of a-Si:H TFTs were calculated even if the values of the related parameters are not accurately specified.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.1
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• pp.51-56
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• 1999

This paper presents a new transient overvoltage blocking device (TOBD) for info-communication facilities with low power and high frequency bandwidth. Conventional protection devices have some problems such as low frequency bandwidth, low energy capacity and high remnant voltage. In order to improve these limitations, thehybrid type TOBD, which consists of a gas tube, avalanche diodes and junction typefield effect transistors (JFETs), was designed and fabricated. The TOBD differs from the conventional protection devices in configuration, and JFETs were used as an active non-linear element and a high speed switching diode with low capacitance limits high current. Therefore the avalanche dilde with low energy capacity are protected fromthe high current, and the TOBD has a very small input capacitance. From the performance test using combination surge generator, which can produce $1.2/50\mus\;4.2kV_{max}\; 8/20\mus\; 2.1kA_{max}$, it is confirmed that proposed TOBD has an excellent protection performance in tight clamping voltage and limiting current characteristics.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.6
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• pp.28-34
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• 2011

This paper describes the development of the transient analysis model of 345[kV] 100[MVA] STATCOM and the result of the performance analysis. The Korea power utility company, KEPCO began a commercial operation of a 100[MVA] STATCOM(Static synchronous COMpensator) at 345[kV] Migeum substation in Seoul. In order to operate a new control device like STATCOM to the power system, suitable transient model is needed. Therfore, Korea Electric Power Coporation(KEPCO) developed a transient analysis models using EMTDC/PSCAD. The development of this transient analysis model is based on the actual STATCOM S/W algorithm and H/W specification that was provided by its manufacture. Through this model, the transient/dynamic performance of STATCOM at Migeum substation can be analyzed.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.1185-1186
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• 2008

A nuclear explosion emits a transient radiation pulse like gamma rays. Gamma rays have a high energy and cause unexpected effects in semiconductor devices. These effects are mainly referred to dose-rate latcup and dose-rate upset. By transient radiation pulse in CMOS devices, dose-rate latchup is simulated in this paper.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.815-818
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• 1998

The Insulated Gate Bipolar Transistor has the characteristics of MOSFET and BJT. The characteristics of proposed device exhibit high speed switching, the voltage controlled property, and the low ON resistance. This hybrid device has been used and developed continuously in the power electronic engineering field. We can simulate many IGBT circuits, such as the motor drive circuit, the switching circuits etc, with PSpice. However, some problems in PSpice is that the IGBT is old-fashioned and is very difficult to get it. In this paper, the IGBT in PSpice is considered as the basic structure. We changed the valuse of base width, gate-drain overlaping area, device area, and doping concentration, then calculated MOS transconductance, ambipolar recombination lifetime etc. Using this resultant parameter, we could predict the transient response characteristicsof IGBT, for examplex, voltage overshoot, the rising curve of voltage, and the falling curve of current.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2005.05a
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• pp.391-393
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• 2005

This paper studies flicker evaluation considering power quality disturbance. A flicker problem with light device irritates human's eyes. Also, the flicker problem has an influence on adverse effect such as rolling device and rotating device. However, a study of flicker evaluation is not complete. A flicker is measured and evaluated at monitoring point. But we consider power quality disturbances such as voltage sag and transient that cause fault and inverter/breaker switching. Power quality disturbances affects flicker evaluation. A flicker evaluation index increases. Therefore, we consider power quality disturbances. We detect voltage sag and transient using wavelet and evaluate flicker without flicker index including power quality disturbances.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.148-150
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• 1993

The IGBT(Insulated Gate Bipolar Transistor) is a power semiconductor device that has gained acceptance among power electronic circuit design engineers for motor drive and Power converter applications. The device-circuit interaction of power insulated gate bipolar transistor for a series-inductor load, both with and without a snubber are, simulated. An analytical model for the transient operation of the IGBT is used in conjunction with the load circuit state equations for the simulations.

• Journal of Power Electronics
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• v.2 no.3
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• pp.171-180
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• 2002

New 42-volt automotive electrical systems can provide significant improvements in vehicle performance and fuel economy. It is crucial to provide protection against load dump and other overvoltage transients in 42-volt systems. While advanced active control techniques are generally considered capable of providing such protection, the use of passive transient voltage suppression (TVS) devices as a secondary or supplementary protection means can significantly improve design flexibility and reduce system costs. This paper examines the needs and options for passive TVS devices for 42-volt applications. The limitations of the commonly available automotive TVS devices, such as Zener diodes and metal oxide varistors (MOV), are analyzed and reviewed. A new TVS device concept, based on power MOSFET and thin-film polycrystalline silicon back-to-back diode technology, is proposed to provide a better control on the clamp voltage and meet the new 42-volt specification. Both experimental and modeling results are presented. Issues related to the temperature dependence and energy absorbing capability of the new TVS device are discussed in detail. It is concluded that the proposed TVS device provides a cost-effective solution for load dump protection in 42-volt systems.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2006.05a
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• pp.376-379
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• 2006

This paper studies flicker evaluation considering power quality disturbance. A flicker problem with light device irritates human's eyes. Also, the flicker problem has an influence on adverse effect such as rolling device and rotating device. However, a study of flicker evaluation is not complete. A flicker is measured and evaluated at monitoring point. But we consider power qualify disturbances such as voltage sag and transient that cause fault and inverter/breaker switching. Power quality disturbances affects flicker evaluation. A flicker evaluation index increases. Therefore, we consider power quality disturbances. We detect voltage sag and transient using wavelet and evaluate flicker without flicker index including power quality disturbances.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.06a
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• pp.1166-1169
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• 2005

This paper describes a new transient voltage suppressor(TVS) with a low insertion loss and a high cut-off frequency to protect antenna circuit from transient voltages. Conventional protection devices have some problems such as a low frequency bandwidth and a high insertion loss. In order to improve these limitations, a coaxal type TVS, which consists of a gas tube is developed. The performance of the proposed transient voltage suppressor is tested by using a combination surge generator specified in IEC 61000-4-5 standard and by using a network analyzer of 40 MHz ${\sim}$ 5 GHz bandwidth. From the experimental results, it is confirmed that the proposed TVS has an enough protection performance in a low insertion loss and a high cut-off frequency.