• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.10
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• pp.1861-1868
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• 2009

A ground electrode subjected to lightning surge current shows the transient impedance behaviors. The ground electrode for protection against lightning should be evaluated in view of the transient grounding impedance and conventional grounding impedance, not ground resistance. The transient impedance characteristics of ground electrodes are influenced by the shape of ground electrode and the soil characteristics, as well as the waveform of lightning surge current. In order to propose a simulation method of analyzing the transient impedance characteristics of the grounding system in practical use, this paper suggests a theoretical analysis method of distributed parameter circuit model to simulate the transient impedance characteristics of counterpoise subjected to lightning surge current. EMTP and Matlab programs were employed to compute the transient grounding impedances of three counterpoises with different lengths. As a consequence, the simulated results using the proposed distributed parameter circuit model are in good agreement with the measured results.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.65 no.3
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• pp.210-215
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• 2016

The transient characteristics of the Mg/Air fuel cell were ascribed to the load current, electrolyte concentrations, air electrode area and electrode distance. It was found that transient phenomena occurred in the load current, which is due to activate of the oxidation and reduction reaction process. The transient time increase with the load current increase. The transient characteristics were investigated with regard to internal resistance. The maximum power output analysis was employed in order to explain the delayed action under various experimental conditions. The internal resistances had a significant effect on the transient characteristics. The transient curves thus obtained were in almost agreement with internal resistance characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.428-431
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• 2003

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $113.4{\AA}$ and $814{\AA}$, which have the gate area 10-3cm2. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.32-37
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• 2003

In this paper, the trap characteristics of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 113.4nm and 814nm, which have the gate area 10$\^$-3/ $\textrm{cm}^2$. The stress induced leakage currents will affect data retention, and the stress current and transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.96-100
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• 2017

In this paper, the flux-lock type superconducting fault current limiter (SFCL) using double quench was suggested and its transient current limiting characteristics were analyzed. The suggested flux-lock type SFCL using double quench consists of two magnetically coupled windings and two $high-T_{c}$ superconducting (HTSC) elements connected in series with each winding. To analyze the transient current limiting characteristics of the flux-lock type SFCL using double quench, the short-circuit tests according to the fault angles, which affect the transient component of the fault current right after the fault occurs, were executed. From the comparative analysis for the short-circuit tests at both $0^{\circ}$ and $90^{\circ}$ fault angles, the useful transient current limiting operations of the suggested flux-lock type SFCL through the double or the single quench occurrence were confirmed.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.11
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• pp.717-723
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• 1999

The transient characteristics of grounding systems play a major role in the protection of power equipments, electronic circuits and info-communication facilities against surges which arise from lightning or ground faults. Electronic devices are very weak against lightning surges injected from grounding systems and can be damaged. The malfunction and damage of electronic circuits bring about bad operation performances, a lot of economical losses, and etc. Therefore, in order to obtain the effective protection measure of electronic devices from overvoltages and lightning surges, the analysis of the transient grounding impedances in essential. One of this work is to examine the transient behaviors of grounding impedances under steplike currents for various grounding systems. And the other of this work is to evaluate the transient behaviors of a grid with rods under impulse currents and to investigate the effect of grounding lead wire. Transient grounding impedances of a grid with rods under impulse current waves have been measured as a parameter of the length of the grounding leads. Z-t, Z-i and V-i curves of transient grounding impedance under impulse current waveforms have been measured and analyzed. It was found that the grounding impedance gives the inductive, resistive and capacitive aspects under steplike current. Transient grounding impedance characteristics were very different with shapes, geometries of ground electrodes. Also, they were dependent on the waveform and magnitude of impulse current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.102-105
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• 1997

The thickness dependence of stress voltage oxide currents has been measured in oxides with thicknesses between 10nm and 80nm. The oxide currents were shown to be composed of stress current and transient current. The stress current was caused by trap assited tunneling through the oxide. The transient current was caused by the tunneling charging and discharging of the trap in the interfaces. The stress current was used to estimate to the limitations on oxide thicknesses. The transient current was used to the data retention in memory devices.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.2
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• pp.1-8
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• 2014

In this paper, SOA Current and Temperature Driver which consisted of LabVIEW programming part capable of current and temperature transient response pattern design, DAQ module for analog voltage in&out, and voltage to current converting chips has realized. The output current(possible to 3A) from the Driver to SOA was clearly constant without ripple and also showed no variance until 1mA unit for a long time operation. The temperature of TEC took several seconds to reach a set temperature, and were maintained stably within ${\pm}^0.1{\circ}C$ for several hours. The proposed Driver can replace the previous high cost SOA Drivers for wavelength swept lasers fully and provides the convenience of transient response design capability for current and temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.371-371
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• 2010

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the MEMS implementation with nano structure. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $41{\AA}$, which have the gate area $10^{-3}cm^2$. The stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Journal of IKEEE
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• v.23 no.2
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• pp.552-556
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• 2019

This paper present a capless low drop out regulator (LDO) that improves the load transient response characteristics by using a current regulator. A voltage regulator circuit is placed between the error amplifier and the pass transistor inside the LDO regulator to improve the current characteristics of the voltage line, The proposed fast transient LDO structure was designed by a 0.18 um process with cadence's virtuoso simulation. according to test results, the proposed circuit has a improved transient characteristics compare with conventional LDO. the simulation results show that the transient of rising increases from 1.954 us to 1.378 us and the transient of falling decreases from 19.48 us to 13.33 us compared with conventional capless LDO. this Result has improved response rate of about 29%, 28%.