• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.431-432
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• 2012

In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.14 no.4
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• pp.189-193
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• 1981

An apparatus for continuous measurements of sorption isotherm of dried food was manufactured to shorten the time required for equilibration. The apparatus was so designed that the temperature, air velocity and relative humidity in the experimental chamber could be controlled. The use of dynamic stream of conditioned air with a velocity of 0.2m/sec, instead of static atmosphere, allowed a faster equilibration of dried filefish muscle at $25^{\circ}C$. The mean time necessary for the equilibration of dried filefish muscle at the water activity of a given state to a higher water activity was about 45 hours. The monolayer moisture content of dried filefish muscle calculated from BET-equation was 0.092 kg water /kg dry matter at $25^{\circ}C$.

• Clean Technology
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• v.24 no.1
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• pp.50-54
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• 2018

In this work, N-methyl-2-pyrrolidone (NMP) was added into diethylenetriamine (DETA) aqueous solution for high $CO_2$ loading via phase splitting of absorbents during $CO_2$ absorption. Immiscible two phases were formed in the range of more than 30 wt% of NMP in 2 M DETA + NMP + water absorbents because of low solubility of DETA-carbamate in NMP solution. As the composition of NMP in the absorbents increased, the difference of $CO_2$ loading between each phase increased and the volume of bottom phase decreased. In $CO_2$ absorption in packed column by 2 M DETA + NMP + water absorbents, the absorption rate decreased in the range of more than 40 wt% of NMP. It is due to the increasing of mass transfer resistance in liquid film of absorbents at the high concentration of NMP. DETA + NMP + water absorbent is expected as the promising one for reducing the regeneration energy of absorbents according to volume reduction of $CO_2-rich$ phase.

• Transactions of the Korean Society of Mechanical Engineers
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• v.13 no.3
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• pp.404-410
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• 1989

Friction and wear tests were conducted with several different ceramics sliding against ceramic and metal couples with and without lubricant in a two disk type sliding machine. The purpose was to know the tribological properties of ceramics. With very different physical and chemical properties of ceramics compared to metal, the tribological properties of ceramics should be defined in detail. Among them, the wear and friction with same or different couple is very important. Also the lubrication of ceramic is one of the major area to be studied. From this research, SiC, SI$_{3}$N$_{4}$ and ZrO$_{2}$ were slid against SiC, AISI 4340 and bronze under various sliding condition. It was found that the friction and wear of ceramics are strongly dependent on the sliding condition. For unlubricated sliding against SiC, ZrO$_{2}$ shows low wear and friction coefficient over wide lange of load, but with lubricated sliding, SiC shows better performance whatever lubricants were used. Also the effect of lubricant depended upon the material properties of sliding pairs. The general tribological properties of ceramics were not correlated with chattering and noise at low load but it could be reduced or avoided effectively by using lubricants. SiC and Si$_{3}$N$_{4}$ slid against SiC have transition from mild to severe wear at high load but ZrO$_{2}$-SiC and SiC-steel have not. Wear debris formed on the contact area of SiC couples was main cause of the initiation of transition. At high speed, only ZrO$_{2}$ sliding against SiC has transition of wear by low thermal conductivity.

• Journal of radiological science and technology
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• v.28 no.2
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• pp.111-115
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• 2005

The quality of image from the system that creates medical images by using X-ray depends on the various different reasons such as the X-ray generator, the subject and the image transmission medium. In other words, thereare various factors existing that can influence on the quality of image from the moment when the X-ray is generated and until the final image is created. Therefore, the operator who creates images at the clinical site should make continuous evaluation and observation from the final image. There are various methods of evaluating the medical images, but it is assumed that the MTF measurement method can be suitable for measuring actual or effective resolution. So in this study, the MTF measurement method by using X-ray film has been avoided and the MTF features according to the deterioration of the X-ray system have been measured by using the software (the program used Borland C++ builder software and LEAD tools software) that can measure the MTF of the digital medical images. As the result of this measurement, it has been found out through the MTF graph that the resolution and sharpness from the old x-ray generator with a many years of using and many numbers of times of using were deteriorated for the quality of image comparing to those from the new system. Also a simple and easy measurement method for the MTF from the digital medical images can be obtained in this study.

• Korean Journal of Optics and Photonics
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• v.16 no.4
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• pp.384-391
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• 2005

A polymer optical microring resonator, which is laterally coupled to a straight bus waveguide, has been proposed and demonstrated using a nanoimprint technique. The propagation loss of the ring waveguide and the optical power coupling between the ring and bus waveguides was calculated by using a beam propagation method, then the dependence of the device performance on them was investigated using a transfer matrix method. We have especially introduced an imprint stamp incorporating a smoothing buffer layer made of a silicon nitride thin film. This layer played an efficient role in improving the sidewall roughness of the waveguide pattern engraved on the stamp and thus reducing the scattering loss. As a result the overall Q factor of the resonator was greatly increased. Also it reduced the gap between the ring and bus waveguides effectively to enhance the coupling between them, without relying on the direct writing method based on an e-beam writer. As for the achieved device performance at the wavelength of 1550 nm, the quality factor, the extinction ratio, and the free spectral range were ~103800, ~11 dB, and 1.16 m, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.456-456
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• 2010

CMOS 소자가 서브마이크론($0.1\;{\mu}m$) 이하로 스케일다운 되면서 단채널 효과(short channel effect), 게이트 산화막(gate oxide)의 누설전류(leakage current)의 증가와 높은 직렬저항(series resistance) 등의 문제가 발생한다. CMOS 소자의 구동전류(drive current)를 높이고, 단채널 효과를 줄이기 위한 가장 효율적인 방법은 소스 및 드레인의 얕은 접합(shallow junction) 형성과 직렬 저항을 줄이는 것이다. 플라즈마 도핑 방법은 플라즈마 밀도 컨트롤, 주입 바이어스 전압 조절 등을 통해 저 에너지 이온주입법보다 기판 손상 및 표면 결함의 생성을 억제하면서 고농도로 얕은 접합을 형성할 수 있다. 그리고 얕은 접합을 형성하기 위해 주입된 불순물의 활성화와 확산을 위해 후속 열처리 공정은 높은 온도에서 짧은 시간 열처리하여 불순물 물질의 활성화를 높여주면서 열처리로 인한 접합 깊이를 얕게 해야 한다. 그러나 접합의 깊이가 줄어듦에 따라서 소스 및 드레인의 표면 저항(sheet resistance)과 접촉저항(contact resistance)이 급격하게 증가하는 문제점이 있다. 이러한 표면저항과 접촉저항을 줄이기 위한 방안으로 실리사이드 박막(silicide thin film)을 형성하는 방법이 사용되고 있다. 본 논문에서는 (100) p-type 웨이퍼 He(90 %) 가스로 희석된 $PH_3$(10 %) 가스를 사용하여 플라즈마 도핑을 실시하였다. 10 mTorr의 압력에서 200 W RF 파워를 인가하여 플라즈마를 생성하였고 도핑은 바이어스 전압 -1 kV에서 60 초 동안 실시하였다. 얕은 접합을 형성하기 위한 불순물의 활성화는 ArF(193 nm) excimer laser를 통해 $460\;mJ/cm^2$의 에니지로 열처리를 실시하였다. 그리고 낮은 접촉비저항과 표면저항을 얻기 위해 metal sputter를 통해 TiN/Ti를 $800/400\;{\AA}$ 증착하고 metal RTP를 사용하여 실리사이드 형성 온도를 $650{\sim}800^{\circ}C$까지 60 초 동안 열처리를 실시하여 $TiSi_2$ 박막을 형성하였다. 그리고 $TiSi_2$의 두께를 측정하기 위해 TEM(Transmission Electron Microscopy)을 측정하였다. 화학적 결합상태를 분석하기 위해 XPS(X-ray photoelectronic)와 XRD(X-ray diffraction)를 측정하였다. 접촉비저항, 접촉저항과 표면저항을 분석하기 위해 TLM(Transfer Length Method) 패턴을 제작하여 I-V 특성을 측정하였다. TEM 측정결과 $TiSi_2$의 두께는 약 $580{\AA}$ 정도이고 morphology는 안정적이고 실리사이드 집괴 현상은 발견되지 않았다. XPS와 XRD 분석결과 실리사이드 형성 온도가 $700^{\circ}C$에서 C54 형태의 $TiSi_2$ 박막이 형성되었고 가장 낮은 접촉비저항과 접촉저항 값을 가진다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.2
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• pp.732-740
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• 2019

Evaporative humidification using a humidifying element is widely used for humidification of a building or a data center. The performance of a humidifying element is commonly expressed as humidification efficiency, which is used independent of air temperature, humidity and water temperature. In this study, a series of tests were conducted at two air conditions (data center and commercial building) using two different humidifying elements (cellulose/PET and Glasdek) changing the frontal air velocity and water temperature. Results showed that the measured humidification efficiency was dependent on the air condition and water temperature. In fact, even dehumidification occurred at the inlet of the humidifying element at the air condition of commercial building. The reason was due to the inlet water temperature, which was lower than the dew point air temperature. As the difference between the inlet water and the dew point air temperature increased, the humidification efficiency decreased. This suggest that proper thermal model should account for the inlet region, where the amount of moisture transfer may be different from the other part of the humidification element. A simple analysis on the thermal performance of the cellulose/PET humidification element showed that the Sherwood number was adequately predicted, whereas the friction factor was ovepredicted, probably due to the simplification of the channel geometry and the neglection of the water film on the element surface.

• Korean Chemical Engineering Research
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• v.57 no.4
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• pp.512-518
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• 2019

To develop a membrane electrode assembly (MEA) with lower Pt loading and higher performance in proton exchange membrane fuel cells (PEMFCs), it is an important research issue to understand interfacial structure of Pt/C catalyst and ionomer and design the catalyst layer structure. In this study, we prepared short-side-chain Nafion-based ionomer dispersion using propylene glycol (PG) as a solvent instead of water which is commonly used as a solvent for commercially available ionomers. Cathode catalyst layers with different ionomer content from 20 to 35 wt% were prepared using the ionomer dispersion for the fabrication of four different MEAs, and their fuel cell performance was evaluated. As the ionomer content increased to 35 wt%, the performance of the prepared MEAs increased proportionally, unlike the commercially available water-based ionomer, which exhibited an optimum at about 25 wt%. Small size micelles and slow evaporation of PG in the ionomer dispersion were effective in proton transfer by inducing the formation of a uniformly structured catalyst layer, but the low oxygen permeability problem of the PG-based ionomer film should be resolved to improve the MEA performance.

• Korean Chemical Engineering Research
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• v.57 no.4
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• pp.525-530
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• 2019

The performance and stability of solid oxide fuel cells (SOFCs) depend on the microstructure of the electrode and electrolyte. In anode, porosity and pore distribution affect the active site and fuel gas transfer. In an electrolyte, density and thickness determine the ohmic resistance. To optimizing these conditions, using costly method cannot be a suitable research plan for aiming at commercialization. To solve these drawbacks, we made high performance unit cells with low cost and highly efficient ceramic processes. We selected the NiO-YSZ cermet that is a commercial anode material and used facile methods like die pressing and dip coating process. The porosity of anode was controlled by the amount of carbon black (CB) pore former from 10 wt% to 20 wt% and final sintering temperature from $1350^{\circ}C$ to $1450^{\circ}C$. To achieve a dense thin film electrolyte, the thickness and microstructure of electrolyte were controlled by changing the YSZ loading (vol%) of the slurry from 1 vol% to 5 vol. From results, we achieved the 40% porosity that is well known as an optimum value in Ni-YSZ anode, by adding 15wt% of CB and sintering at $1350^{\circ}C$. YSZ electrolyte thickness was controllable from $2{\mu}m$ to $28{\mu}m$ and dense microstructure is formed at 3vol% of YSZ loading via dip coating process. Finally, a unit cell composed of Ni-YSZ anode with 40% porosity, YSZ electrolyte with a $22{\mu}m$ thickness and LSM-YSZ cathode had a maximum power density of $1.426Wcm^{-2}$ at $800^{\circ}C$.