• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.363-363
• /
• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Journal of the korean academy of Pediatric Dentistry
• /
• v.46 no.2
• /
• pp.165-172
• /
• 2019

The purpose of this study was to evaluate the effect of application time and phosphoric acid etching of 8th generation adhesives containing functional monomer on adhesive performance in primary teeth. 80 extracted non-carious human primary teeth were selected and divided into 8 groups based on 3 factors: (1) adhesive: G-Premio bond and Single bond universal; (2) application time: shortened time and manufacture's instruction; (3) acid etching mode: self-etching and total-etching. Shear bond strength was measured using a universal testing machine, and fractured surface were observed under scanning electron microscope. Microleakage was evaluated by dye penetration depth. G-Premio bond were not significant different in shear bond strength and microleakage depending on application time of adhesive and acid etching mode. In Single bond universal, shear bond strength of short application time was significantly lower than that of long adhesive application time (p = 0.014). Clinically applicable shear bond strength values (> 17 MPa) were identified in all groups. These results suggested that G-Premio bond be used clinically for a short application time without phosphoric acid etching.

• ETRI Journal
• /
• v.21 no.3
• /
• pp.16-21
• /
• 1999

After etching Al-Cu alloy films using SiCl4/Cl_2/He/CHF3 mixed gas plasma, the corrosion phenomenon at the grain boundary of the etched surface and a passivation layer on the etched surface with an SF6 plasma treatment subsequent to the etching were studied. In Al-Cu alloy system, corrosion occurs rapidly on the etched surface by residual chlorine atoms, and it occurs dominantly at the grain boundaries rather than the crystalline surfaces. To prevent corrosion, the SF6 gas plasma treatment subsequent to etching was carried out. The passivation layer is composed of fluorine-related compounds on the etched Al-Cu surface after the SF6 treatment, and it suppresses effectively corrosion on the surface as the SF6 treatment pressure increases. Corrosion could be suppressed successfully with the SF6 treatment at a total pressure of 300 mTorr. To investigate the reason why corrosion could be suppressed with the SF6 treatment, behaviors of chlorine and fluorine were studied by various analysis techniques. It was also found that the residual chlorine incorporated at the grain boundary of the etched surface accelerated corrosion and could not be removed after the SF6 plasma treatment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.12
• /
• pp.915-918
• /
• 2010

In this work, the etching characteristics of ZnO thin films were investigated using an inductively coupled plasma(ICP) of HBr/Ar/$CHF_3$ gas mixtures. The plasma characteristics were analyzed by a quadrupole mass spectrometer (QMS) and double langmuir probe (DLP). The surface reaction of the ZnO thin films was investigated using X-ray photoelectron spectroscopy (XPS). The etch rate of ZnO was measured as a function of the $CHF_3$ mixing ratio in the range of 0-15% in an HBr:Ar=5:2 plasma at a fixed gas pressure (6mTorr), input power (700 W), bias power (200 W) and total gas flow rate(50sccm). The etch rate of the ZnO films decreased with increasing $CHF_3$ fraction due to the etch-blocking polymer layer formation.

• Transactions on Electrical and Electronic Materials
• /
• v.9 no.1
• /
• pp.1-5
• /
• 2008

ZnS is an attractive material for future optical and electrical devices since it has a direct and wide band gap to provide blue emission at room temperature. In this study, inductively coupled $BCl_3/Ar$ plasma was used to etch ZnS:Mn thin films. The maximum etch rate of 164.2 nm/min for ZnS:Mn was obtained at a $BCl_3(20)/Ar(80)$ gas mixing ratio, an rf power of 700 W, a dc bias voltage of -200V, a total gas flow of 20 sccm, and a chamber pressure of 1Pa. The etch behaviors of ZnS:Mn thin films under various plasma parameters showed that the ZnS:Mn were effectively removed by the chemically assisted physical etching mechanism. The surface reaction of the ZnS:Mn thin films was investigated by X-ray photoelectron spectroscopy. The XPS analysis revealed that Mn had detected on the surface ZnS:Mn etched in $BCl_3/Ar$ plasma.

• Journal of the Korean institute of surface engineering
• /
• v.32 no.2
• /
• pp.165-171
• /
• 1999

The etching reaction of $UO_2$ in $CF_4/O_2$ gas plasma is examined as functions of $CF_4/O_2$ ratio, plasma power, and substrate temperature at up to $370^{\circ}C$ under the total pressure of 0.30 Torr. It is found that the highest etching rate is obtained at 20% $O_2$ mole fraction, regardless of r. f. power and substrate temperature. The existence of the optimum $CF_4/O_2$ ratio is confirmed by SEM, XPS and XRD analysis. The highest etching reaction rate at $370^{\circ}C$ under 150W exceeds 1000 monolayers/min., which is equivalent to 0.4$\mu\textrm{m}$/min. The mass spectrometry analysis results reveal that the major reaction product is uranium hexa-fluoride $UF_6$. Based on the experimental findings, dominant overall reaction of uranium dioxide in $CF_4/O_2$ plasma is determined : $8UO_2+12CF_4+3O_2=8UF_6+12CO_{2-x}$ where $CO_{2-x}$ represents the undetermined mix of $CO_2$ and CO.

• Restorative Dentistry and Endodontics
• /
• v.28 no.2
• /
• pp.169-177
• /
• 2003

본 연구는 total etching (Scotchbond Multi-Purpose; MP) 및 self-etching (Clearfil SE Bond; SE 과 Prompt L-pop LP) 상아질 접착제의 nanoleakage 양상을 관찰하고 열순환 후의 nanoleakage 양상의 변화를 분석하고자 하였다. 30개의 발거된 치아의 교합면 및 협, 설측 법랑질을 제거하였다. 열 순환 시행 여부에 따라 두 군으로 나누어 실험하였으며 각각의 상아질 접착제 도포 후 Z-250으로 교합면을 수복하였다. Silver nitrate용액 및 현상액에 침적 후치아의 협설 방향으로 평행하게 절단하여 SEM으로 관찰하였다. 서로 다른 양상의 nanoleakage가 관찰되었다. MP의 경우는 resin tag 주위로 뚜렷한 은의 침착을 관찰 할 수 있었으며 혼합층 전체 두께에 띠 및 점상으로 흩어져 침착된 은을 관찰 할 수 있었다. SE의 경우는 혼합층의 하층을 따라 은으로 침착된 선을 관찰 할 수 있었으며 혼합층과 adhesive 경계를 따라 무정형의 은 침착물 들을 관찰할 수 있었다. LP의 경우는 혼합층의 하부 및 혼합층 내에 띠 모양으로 은의 침착을 관찰 할 수 있었으며 혼합층의 하부에서는 관찰되지 않고 혼합층의 내부에서만 관찰되는 경우도 있었다. 열순환을 시행한 군에서는 전반적 nanoleakage 양상은 열 순환을 시행하지 않은 군과 유사하였으나 은 침착의 증가를 관찰 할 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.4
• /
• pp.276-279
• /
• 2011

This work, the etching characteristics of $Ba_2Ti_9O_{20}$(BTO) thin films were investigated using an inductively coupled plasma (ICP) of $Ar/Cl_2$ gas mixture. The etch rate of BTO thin films as well as the $BTO/SiO_2$ and BTO/PR etch selectivity were measured as functions of $Ar/Cl_2$ mixing ratio (0~100% Ar) at a constants gas pressure (6 mTorr), total gas flow rate (50 sccm), input power (700 W) and bias power (200 W). The etch rate of BTO thin films decreased with increasing Ar fraction. To analyze the etching mechanism an optical emission spectroscopy (OES), double Langmuir probe(DLP) and surface analysis using X-ray photoelectron spectroscopy (XPS) were carried out.

• Journal of Technologic Dentistry
• /
• v.11 no.1
• /
• pp.83-88
• /
• 1989

This investigation was performed to evaluate the effect of four different preteatment techniques on the bond strength of porcelain to non-precious metal alloy. Samples of total of 40 were divided into 4 groups according to the 4 variables which included the 50$\mu$alumina oxide air abrasion, method, the as retention bead method, the L-retention bead method, the Etching method. The completed metal-porcelain samples were compressed in Instron loading machine until gross fracture occured to examine the effect of the complex variables on the bond strength of porcelain to non precious metal alloy. The result obtained were as follows : 1. The difference of bond strength according to four different pretreatment techniques was statistically significant(p<0.01). 2. The difference of bond strength between the ss-retention bead method and the L-retention bead method was not significant statistically(p>0.05) 3. The difference of bond strength between the retention bead method and the etching method was statistically significant(p<0.01). 4. The difference of bond strength between the retention bead method and the 50$\mu$alumina oxide air abrasion method was statistically significant(p<0.01). 5. The difference of bond strength between the etching method and the 50$\mu$alumina oxide air abrasion method was statistically significant(p<0.01).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.6
• /
• pp.445-448
• /
• 2011

In this study, the etching characteristics of $Al_2O_3$ thin films were investigated using an ICP (inductively coupled plasma) of $BCl_3$/Ar gas mixture. The etch rate of $Al_2O_3$ thin films as well as the $SiO_2/Al_2O_3$ etch selectivity were measured as functions of $BCl_3$/Ar mixing ratio (0~100% Ar) at a constant gas pressure (10 mTorr), total gas flow rate (40 sccm), input power (800 W) and bias power (100 W). The behavior of the $Al_2O_3$ etch rate was shown to be quite typical for ion-assisted etch processes with a dominant chemical etch pathway. To analyze the etching mechanism using DLP (double langmuir probe), OES (optical emission spectroscopy) and surface analysis using XPS (x-ray photoelectron spectroscopy) were carried out.