• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.87-90
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• 2006

In case of preparation of ITO thin film for using top electrode of Top-emitting Organic Light Emitting Diodes(TOLEDs), the ITO thin film should be prepared at room temperature and low oxygen gas flow condition in order to reduced the damage of organic layer due to the bombardment of highly energetic particles such as negative oxygen ions which accrued from the plasma. In this study, the ITO thin film with high optical transmittance and low resistivity prepared as a function of oxygen gas (0 ${\~}$ 0.8 sccm) and Ar gas was fixed at 20 sccm by the Facing Targets Sputtering (FTS) method. The electrical and optical properties of ITO thin films were measured by Hall effect measurement, UV/VIS spectrometer, respectively In the results, we obtained the ITO thin film with lowest resistivity($3{\times}10^{-4} {\Omega}{\cdot} cm$) at oxygen gas flow 0.2 sccm and optical transmittance over $80\%$ at oxygen gas flow over 0.2 sccm.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.148-148
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• 2015

Over the past several years, Colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been developed for the future of optoelectronic applications. An inverted-type quantum-dot light-emitting-diode (QDLED), employing low work function organic material polyethylenimine ethoxylated(PEIE) (<10 nm)[1] modified ZnO nanoparticles (NPs) as electron injection and transport layer, was fabricated by all solution processing method, instead of electrode in the device. The PEIE surface modifier incorporated on the top of the ZnO NPs film, facilitates the enhancement of both electorn injection into the CdSe-ZnS QD emissive layer by lowering the workfunction of ZnO from 3.58eV to 2.87eV and charge balance on the QD emitter. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 7.5 V, the QDLED device emitted spectrally orange color lights with high luminance up to 11110 cd/m2, and showed current efficiency of 2.27 cd/A.[2]

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.380-380
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• 2010

Currently, organic light-emitting diodes (OLEDs) have been proven of their readiness for commercialization in terms of lifetime and efficiency. In accordance with emerging new technologies, enhancement of light efficiency and extension of application fields are required. Particularly inverted structures, in which electron injection occurs at bottom and hole injection on top, show crucial advantages due to their easy integration with Si-based driving circuits for active matrix OLED as well as large open area for brighter illumination. In order to get better performance and process reliability, usually a proper buffer layer for carrier injection is needed. In inverted top emission OLED, the buffer layer should protect underlying organic materials against destructive particles during the electrode deposition, in addition to increasing their efficiency by reducing carrier injection barrier. For hole injection layers, there are several requirements for the buffer layer, such as high transparency, high work function, and reasonable electrical conductivity. As a buffer material, a few kinds of transition metal oxides for inverted OLED applications have been successfully utilized aiming at efficient hole injection properties. Among them, we chose 2 nm of $WO_3$ between NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] and Au (or Al) films. The interfacial energy-level alignment and chemical reaction as a function of film coverage have been measured by using in-situ ultraviolet and X-ray photoelectron spectroscopy. It turned out that the $WO_3$ interlayer substantially reduces the hole injection barrier irrespective of the kind of electrode metals. It also avoids direct chemical interaction between NPB and metal atoms. This observation clearly validates the use of $WO_3$ interlayer as hole injection for inverted OLED applications.

• 한국진공학회지
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• 제14권4호
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• pp.195-200
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• 2005

For the longevity of OLEDs, passivation of OLEDs is an important process step since organic materials used in OLEDs are very vulnerable to moisture. In this work, the passivation effect of the plasma polymerized para-xylene (PP$\rho$X) layers was studied. The PPpX layers deposited by PECVD were formed on top of the cathode with various plasma powers of 50 - 90 W. Passivation effect of PP$\rho$X was significantly dependent upon the deposition plasma power of the PP$\rho$X film. The lifetime of OLEDs with the 70 W deposited PP$\rho$X passivation layer was about 5 times longer than that of the control device.

• 반도체디스플레이기술학회지
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• 제19권1호
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• pp.49-54
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• 2020

The voltage drop due to the thin cathode film at the large size top emission OLED panel was successfully compensated with making electrical contact between thin cathode and anode auxiliary electrode by 355nm wavelength of laser. It was found that the luminance uniformity dramatically increased from around 15% to more than 80% through this electrical compensation between thin cathode and anode auxiliary electrode. Moreover, the removing process for EL materials on the anode auxiliary electrode process by laser was very reliable and stable. Therefore, it is thought that the EL removal method using laser to make electrical contacts is very appropriate to mass production for such a large size top emission OLEDs to obtain high uniformity of luminance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.253-257
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• 1998

Organic-based electroluminescent devices have attracted lots of interests because of their possible application as large-area flat pan디 display. In this study, current-voltage (I-V) characteristics of MEH-PPV thin films was investigated using various metal as a top electrode, where MEH-PPV thin films were prepared on 170 substrate by spin coating method and various metal such as Al, Ag, In, MgIn was deposited on MEH-PPV thin films as a top electrode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.53-54
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• 2005

We report on plasma damage free-sputtering technologies for organic light emitting diodes (OLEDs), organic thin rim transistor (OTFT) and flexible displays by using a box cathode sputtering (BCS) method. Specially designed BCS system has two facing targets generating high magnetic fields ideally entering and leaving the targets, perpendicularly. This target geometry allows the formation of high-density plasma between targets and enables us to realize plasma damage free sputtering on organic layer without protection layer against plasma. The OLED with top cathode prepared by BCS shows electrical and optical characteristics comparable to OLED with thermally evaporated Mg-Ag cathode. It was found that TOLED with ITO or IZO top cathode layer prepared by BCS has much lower leakage current density ($1\times10^{-5}$ mA/cm2 at -6V) than that ($1\times10^{-1}\sim10^{\circ}mA/cm^2$)of OLED prepared by conventional DC sputtering system. This indicates that BCS technique is a promising electrode deposition method for substituting conventional thermal evaporation and dc/rf sputtering in fabrication process of organic based optoelectronics.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1311-1314
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• 2008

We have developed new electrical dopants of rhenium oxide ($ReO_3$) and cupper iodide (CuI) as p-dopants and rubidium carbonate ($Rb_2CO_3$) as an n-dopant, respectively. $ReO_3$ has advantage of low temperature evaporation (about $300^{\circ}C$) with enhanced device stability. Various kinds of high performance organic light emitting diodes have been realized, including bottom emission, tandem, and top-emission OLEDs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.955-962
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• 2005

Power efficiency, lifetime and stable manufacturing processes are the crucial parameters for the success of organic light emitting diodes (OLEDs) in display and lighting applications. Highest power efficiencies of PIN-OLEDs for all principal colours and for bottom and top emission OLED structures have been demonstrated. The PIN structure, which means the incorporation of intentionally doped charge carrier transport layer in a suitable OLED layer setup, lowers the operating voltage to achieve highest power efficiencies. Up to now the n-doping of the electron transport layer has been done by alkali metal co-deposition. This has main draw-backs in terms of manufacturability, since the handling of large amounts of pure Cs is a basic issue in production lines. Here we present in detail results on PIN-OLEDs comprising a newly developed molecular n-dopant. All the previous OLED performance data based on PIN-OLEDs with alkali metal doping could be reproduced and will be further improved in the future. Hence, for the first time, a full manufacturing compatible PIN-OLED is available.

• Journal of Mechanical Science and Technology
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• 제18권9호
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• pp.1680-1688
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• 2004

The information indicating device plays an important part in the information times. Recently, the classical CRT (Cathod Ray Tube) display is getting transferred to the LCD (Liquid Crystal Display) one which is a kind of the FPDs (Flat Panel Displays). The OLED (Organic Light Emitting Diodes) display of the FPDs has many advantages for the low power consumption, the luminescence in itself, the light weight, the thin thickness, the wide view angle, the fast response and so on as compared with the LCD one. The OLED has lately attracted considerable attention as the next generation device for the information indicators. And also it has already been applied for the outside panel of a mobile phone, and its demand will be gradually increased in the various fields. It is manufactured by the vapor deposition method in the vacuum state, and the uniformity of thin film on the substrate depends on the temperature distribution in the point-cell source. This paper describes the basic concepts that are obtained to design the point-cell source using the computational temperature analysis. The grids are generated using the module of AUTOHEXA in the ICEM CFD program and the temperature distributions are numerically obtained using the STAR-CD program. The temperature profiles are calculated for four cases, i.e., the charge rate for the source in the crucible, the ratio of diameter to height of the crucible, the ratio of interval to height of the heating bands, and the geometry modification for the basic crucible. As a result, the blowout phenomenon can be shown when the charge rate for the source increases. The temperature variation in the radial direction is decreased as the ratio of diameter to height is decreased and it is suggested that the thin film thickness can be uniformed. In case of using one heating band, the blowout can be shown as the higher temperature distribution in the center part of the source, and the clogging can appear in the top end of the crucible in the lower temperature. The phenomena of both the blowout and the clogging in the modified crucible with the nozzle-diffuser can be prevented because the temperature in the upper part of the crucible is higher than that of other parts and the temperature variation in the radial direction becomes small.