• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.1
• /
• pp.32-35
• /
• 2011

Top-emission device has a merit of high aperture ratio and narrow emission spectrum compared to that of bottom-emission one. Emission spectra of top-emission organic light-emitting diodes depending on a layer thickness and view angle were analyzed using a theory of microcavity. Device structure was manufactured to be Al (100 nm)/TPD/$Alq_3$/LiF (0.5 nm)/Al (2 nm)/Ag (30 nm). N,N'-diphenyl-N,N'- di (m-tolyl)-benzidine (TPD) and tris (8-hydroxyquinoline) aluminium (Alq3) were used as a hole-transport layer and emission layer, respectively. And a thickness of TPD and Alq3 layer was varied in a range of 40 nm~70 nm and 60 nm~110 nm, respectively. Angle-dependent emission spectrum out of the device was measured with a device fixed on a rotating plate. Since the top-emission device has a property of microcavity, it was observed that the emission spectrum shift to a longer wavelength region as the organic layer thickness increases, and to a shorter wavelength region as the view angle increases. Layer thickness and view-angle dependent emission spectra of the device were analyzed in terms of microcavity theory. A reflectivity of semitransparent cathode and optical path length were deduced.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.9
• /
• pp.802-807
• /
• 2007

We have developed red phosphorescent top emission organic light-emitting diodes with transparent metal cathodes deposited by using thermal evaporation technique. Phosphorescent guest molecule, BtpIr(acac), was doped in host CBP for the red phosphorescent emission, Ca/Ag, Ba/Ag, and Mg/Ag double layers were used as cathode materials of top emission devices, which were composed of glass/Ni/2TNATA(15 nm)/${\alpha}$-NPD(35 nm)/CBP:BtpIr(acac)(40 nm, 10%)/BCP(5 nm)/$Alq_3$(5 nm)/cathodes. The optical transparencies of these metal cathodes strongly depend on underlying Ca, Ba, and Mg layers. These layers also strongly affect the electrical conduction and emission properties of the red phosphorescent top emission devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.413-414
• /
• 2008

We have studied an organic layer thickness dependent optical properties and microcavity effects for top-emission organic light-emitting diodes. Manufactured top emission device, structure is Al(100nm)ITPD(xnm)/$Alq_3$(ynm)/LiF(0.5nm)/Al(23nm). While a thickness of hole-transport layer of TPD was varied from 35 to 65nm, an emissive layer thickness of $Alq_3$ was varied from 50 to 100nm for two devices. A ratio of those two layers was kept to about 2:3. Variation of the layer thickness changes a traverse time of injected carriers across the organic layer, so that it may affect on the chance of probability of exciton formation. View-angle dependent emission spectra were measured for the optical measurements. Top-emission devices show that the emission peak wavelength shifts to longer wavelength as the organic layer thickness increases. For instance, it shifts from 490 to 555nm in the thickness range that we used. View-angle dependent emission spectra show that the emission intensity decreases as the view-angle increases. The organic layer thickness-dependent emission spectra show that the full width at half maximum decreases as the organic layer thickness increases. Top emission devices show that the full width at half maximum changes from 90 to 35nm as the organic layer thickness increases. In top-emission device, the microcavity effect is more vivid as the organic layer thickness increases.

• Bulletin of the Korean Chemical Society
• /
• v.26 no.9
• /
• pp.1344-1346
• /
• 2005

We report microcavity effect of top emission organic light-emitting diodes (OLEDs) by using Al cathode and anode, which are feasible for not only top emission EL and angle dependant effects but facile evaporation process without ion sputtering. The device in case of $Alq_3$ green emission showed largely shifted EL maximum wavelength as 650 nm maximum emission. It was also observed that detection angle causes different EL maximum wavelength and different CIE values in R, G, B color emission. As a result, the green device using $Alq_3$ emission showed 650 nm emission ($0^{\circ}$) to 576 nm emission ($90^{\circ}$) as detection angle changed. We believe that these phenomena can be also explained with microcavity effect which depends on the different length of light path caused by detection angle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.04a
• /
• pp.107-110
• /
• 2003

본 연구에서는 캐소드 방향으로 발광하는 Top emission 소자를 설계 제작하였다. 이를 위하여 반투명한 금속 박막을 제작하여 전기적 특성과 광학적 특성을 비교 평가하였다. 이를 바탕으로 제작한 Top emission 소자를 bottom emission 소자와 비교하였을 때 구동 전압은 다소 높았으며 색좌표 및 스펙트럼이 이동하였는데 이동 정도와 경향성은 파장에 따라 다르게 나타났다

• Journal of the Semiconductor & Display Technology
• /
• v.5 no.3 s.16
• /
• pp.23-27
• /
• 2006

Recently, Top emission organic light-emitting diode (TEOLED) has been attracted by their potential application for the development of flat panel display (FPD). We have fabricated the high luminance top emission organic-emitting diode (TEOLED) using dual cathode layer and three top emitting structure. These devices were characterized by electroluminescence (EL) and current density-voltage (J-V) measurements. After compared it with Au anode structure, luminance of the device using dual anode was better than using without Al device. Consequently, Al layers are very good candidates for a promising electron-injecting buffer layer for top emission light-emitting diode (TEOLED).

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.1081-1081
• /
• 2002

Top emission organic EL devices were fabricated by using metal-doped cathode interface layer to achieve low drive voltages. Also, facing-targets-type sputtering was used to sputter indium-tin oxide layer on top of organic active layer. The devices fabricated in this study showed reasonably high external quantum efficiency of about 1 % which is comparable to that of bottom-emission-type devices.

• Journal of the Semiconductor & Display Technology
• /
• v.16 no.2
• /
• pp.44-48
• /
• 2017

We explain optical and electrical properties of top and bottom-emission structured alternating-current powder electroluminescent devices (ACPELDs) with Ga-doped ZnO(GZO) transparent electrode. The top-emission ACPELDs were layered as the metal electrode/dielectric layer/emission layer/top transparent electrode and the bottom-emission ACPELDs were structured as the bottom transparent electrode/emission layer/dielectric layer/metal electrode. The yellow-emitting ZnS:Mn, Cu phosphor and the barium titanate dielectric layers were layered through the screen printing method. The GZO transparent electrode was deposited by the sputtering, its sheet resistivity is $275{\Omega}/{\Box}$. The transparency at the yellow EL peak was 98 % for GZO. Regardless of EL structures, EL spectra of ACPELDs were exponentially increased with increasing voltages and they were linearly increased with increasing frequencies. It suggests that the EL mechanism was attributed to the impact ionization by charges injected from the interface between emitting phosphor layer and the transparent electrode. The top-emission structure obtained higher EL intensity than the bottom-structure. In addition, charge densities for sinusoidal applied voltages were measured through Sawyer-Tower method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.05a
• /
• pp.153-156
• /
• 2005

In this study, we have investigated transient properties of top emission organic light emitting diode (OLED) with a red electrophosphorescent dopant. The emission spectrum shows a strong peak at 620 nm accompanied with a small peak at 675 nm in the red region. Time evolution of electrophosphorescence reveals a decay time of 703 ms at a voltage pulse of 5 V in a device with an emitting area of 20 $mm^2$. Rise and delay times vary from 450 to 14 ms and 73 to 3 ms, respectively, as the voltage amplitude increases from 4.5 to 10 V. These results are compared with the red emitting device without an electron injection layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.57-58
• /
• 2008

We have studied an organic layer and semitransparent Al electrode thickness dependent optical properties and microcavity effects for top-emission organic light-emitting diodes. Manufactured top-emission device structure is Al(100nm)/TPD(xnm)/Alq(ynm)/LiF(0.5nm)/Al(25nm). While a thickness of total organic layer was varied from 85nm to 165n, a ratio of those two layers was kept to be about 2:3. Semitransparent Al cathode was varied from 20nm to 30nm for the device with an organic layer total thickness of 140nm. As the thickness of total organic layer increases, the emission spectra show a shift of peak wavelength from 490nm to 580nm, and the full width at half maxima from 90nm to 35nm. The emission spectra show a blue shift as the view angle increases. Emission spectra depending on a transmittance of semitransparent cathode show a shift of peak wavelength from 515nm to 593nm. At this time, the full width at half maximum was about to be a constant of 50nm. With this kind of microcavity effect, we were able to control the emission spectra from the top-emission organic light-emitting diodes.