• Transactions of the Korean Society of Mechanical Engineers
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• v.11 no.2
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• pp.304-313
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• 1987

The behaviors of layers developed in a solar pond were studied by experimental and analytical methods. An experimental solar pond heated from below was constructed and operated at the net heat fluxes of 110 and 160W/m$^{2}$ and at the initial salt concentration gradients of 18.2, 27.3 and 36.4%/m. The thicknesses, growth rates, temperature and salt concentration in the top and the bottom mixed layers, the diffusive layer and the upper and the lower interfacial boundary layers were measured. The shadowgraph technique was used in order to observe all layer formation and an electroconductivity-temperature probe consisting of four electrodes was fabricated and used in measuring the salt concentration. Based on the experimental results, a model for the solar pond was developed and the governing equation and the assumptions were established. The governing equations were solved by the numerical method. The calculated results obtained from the analysis were compared with the experimental results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.610-615
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• 2022

BaTiO₃ is one of the ferroelectric materials with excellent dielectric properties such as high dielectric constant, low dielectric loss, and is widely used for the manufacturing of capacitors, piezoelectric converters, microsensors, and ferroelectric memories. Inkjet printing is a technology which uses digital and contactless methods which significantly improves flexibility associated with material and structural design, reducing manufacturing costs. Therefore, the top and bottom electrodes, BaTiO₃ ink, and photocurable resin were all printed by an inkjet to produce a BaTiO₃ capacitor. The properties of the printed thin film were analyzed. It was confirmed that the photocurable resin ink was well-infiltrated between the BaTiO₃ powder particles printed by inkjet. The dielectric properties of the capacitor such as dielectric constant which varies in accordance with frequency, polarization and tunability that changes with voltage, were measured.

• Advances in nano research
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• v.14 no.1
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• pp.27-43
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• 2023

This article investigates the energy harvesting characteristics of a magneto-electro-elastic (MEE) cantilever beam reinforced with carbon nanotubes (CNT) under transverse vibration. To this end, the well-known lumped parameter model is used to represent the coupled multiphysics problem mathematically. The proposed system consists of the MEE-CNT layer on top and an inactive substrate layer at the bottom. The substrate is considered to be made of either an isotropic or composite material. Basic laws such as Gauss's Law, Newton's Law and Faraday's Law are used to arrive at the governing equations. Surface electrodes across the beam are used to harvest the electric potential produced, together with a wound coil, for the generated magnetic potential. The influence of various distributions of the CNT and its volume fraction, substrate material, length-to-thickness ratio, and thickness ratio of substrate to MEE layer on the energy harvesting behaviour is thoroughly discussed. Further, the effect of external resistances and changes in substrate material on the response is analysed and reported. The article aims to explore smart material-based energy harvesting systems, focusing on their behaviour when reinforced with carbon nanotubes. The results of this study may lead to an improved understanding of the design and analysis of CNT-based smart structures.

• Progress in Superconductivity
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• v.2 no.2
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• pp.76-80
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• 2001

We have fabricated YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) ramp-edge Josephson junctions by modifying ramp edges of the base electrodes without depositing any artificial barrier layer. YBa$_2$Cu$_3$O/7-x//SrTiO$_3$ (YBCO/STO) films were deposited on SrTiO$_3$(100) by on-axis KrF laser deposition. After patterning the bottom YBCO/STO layer, the ramp edge was cleaned by ion-beam and then reacted with deionized water under various conditions prior to the deposition of counter-electrode layers. The top YBCO/STO layer was deposited and patterned by photolithography and ion milling. We measured current-voltage (I-V) characteristics, magnetic field modulation of the critical current at 77 K. Some showed resistively shunted junction (RSJ)-type I-V characteristics, while others exhibited flux-flow behaviors, depending on the dipping time of the ramp edge in deionized water. Junctions fabricated using optimized conditions showed fairly uniform distribution of junction parameters such as I$_{c}$R$_{n}$ values, which were about 0.16 mV at 77 K with 1$\sigma$~ 24%. We made a dc SQUID with the same deionized water treated junctions, and it showed the sinusoidal modulation under applied magnetic field at 77 K. 77 K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.309-313
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• 2024

The key to determining the lifetime of OLED device is how much brightness can be maintained. It can be said that there are internal and external causes for the degradation of OLED devices. The most important cause of internal degradation is bonding and degradation in the excited state due to the electrochemical instability of organic materials. The structure of OLED modeled in this paper consists of a cathode layer, electron injection layer (EIL), electron transport layer (ETL), light emission layer, hole transport layer (HTL), hole injection layer (HIL), and anode layer on a glass substrate from top to bottom. It was confirmed that the temperature generated in OLED was distributed around the maximum of 343.15 K centered on the emission layer. It can be seen that the heat distribution generated in the presented OLED structure has an asymmetrically high temperature distribution toward the cathode, which is believed to be because the sizes of the cathode and positive electrode are asymmetric. Therefore, when designing OLED, it is believed that designing the structures of the cathode and anode electrodes as symmetrically as possible can ensure uniform heat distribution, maintain uniform luminance of OLED, and extend the lifetime. The thermal distribution of OLED was analyzed using the finite element method according to Comsol 5.2.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.27 no.2
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• pp.63-70
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• 2014

Design sensitivity analysis and topology design optimization for a piezoelectric crystal resonator are developed. The piezoelectric crystal resonator is deformed mechanically when subjected to electric charge on the electrodes, or vice versa. The Mindlin plate theory with higher-order interpolations along thickness direction is employed for analyzing the thickness-shear vibrations of the crystal resonator. Thin electrode plates are masked on the top and bottom layers of the crystal plate in order to enforce to vibrate it or detect electric signals. Although the electrode is very thin, its weight and shape could change the performance of the resonators. Thus, the design variables are the bulk material densities corresponding to the mass of masking electrode plates. An optimization problem is formulated to find the optimal topology of electrodes, maximizing the thickness-shear contribution of strain energy at the desired motion and restricting the allowable volume and area of masking plates. The necessary design gradients for the thickness-shear frequency(eigenvalue) and the corresponding mode shape(eigenvector) are computed very efficiently and accurately using the analytical design sensitivity analysis method using the eigenvector expansion concept. Through some demonstrative numerical examples, the design sensitivity analysis method is verified to be very efficient and accurate by comparing with the finite difference method. It is also observed that the optimal electrode design yields an improved mode shape and thickness-shear energy.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1263-1269
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• 1999

An FBAR(Solidly Mounted Resonator) was fabricated using reflector layers which prohibit the penetration of bulk acoustic wave into substrate. The SMR consisted of top and bottom electrodes(Al films), a piezoelectric layer (ZnO film), reflector layers(W/$Si_2$ films) and Si substrate. The electrodes were deposited by dc sputtering. The piezoelectric layer and the reflector layers were deposited by rf magnetron sputtering. The control of crystallinity, microstructures and electric properties of each layer was essential for attaining the optimum FBAR characteristics. Under the best deposition conditions for FBAR devices, the ZnO films had highly c-axis preferred orientation(${\sigma}=2.17^{\circ}$), resistivity of $10^4\;{\omega}cm$, and surface roughness of 10.6 ${\AA}$. On the other hand, the surface roughness of W and $Si_2$ films was 16 ${\AA}$ and 33 ${\AA}$, respectively, and the resistivity of Al film was $5.1{\times}10^{-6}\;{\Omega}cm$. The SMR devices were fabricated by the conventional semiconductor processes. In the resonance conditions of the SMR, the series resonance frequency (fs) and the parallel resonance frequency(fp) were 1.244 GHz and 1.251 GHz, respectively and the quality factor(Q) was 1200.

• Journal of the Korean Ceramic Society
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• v.49 no.5
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• pp.404-411
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• 2012

The reliability of solid oxide fuel cells (SOFCs) particularly depends on the high quality of solid oxide electrolytes. The application of thinner electrolytes and multi electrolyte layers requires a more reliable characterization method. Most of the investigations on thin film solid electrolytes have been made for the parallel transport along the interface, which is not however directly related to the fuel cell performance of those electrolytes. In this work an array of ion-blocking metallic Ti/Au microelectrodes with about a $160{\mu}m$ diameter was applied on top of an ultrathin ($1{\mu}m$) yttria-stabilized-zirconia/gadolinium-doped-ceria (YSZ/GDC) heterolayer solid electrolyte in a micro-SOFC prepared by PLD as well as an 8-${\mu}m$ thick YSZ layer by screen printing, to study the transport characteristics in the perpendicular direction relevant for fuel cell operation. While the capacitance variation in the electrode area supported the working principle of the measurement technique, other local variations could be related to the quality of the electrolyte layers and deposited electrode points. While the small electrode size and low temperature measurements increaseed the electrolyte resistances enough for the reliable estimation, the impedance spectra appeared to consist of only a large electrode polarization. Modulus representation distinguished two high frequency responses with resistance magnitude differing by orders of magnitude, which can be ascribed to the gadolinium-doped ceria buffer electrolyte layer with a 200 nm thickness and yttria-stabilized zirconia layer of about $1{\mu}m$. The major impedance response was attributed to the resistance due to electron hole conduction in GDC due to the ion-blocking top electrodes with activation energy of 0.7 eV. The respective conductivity values were obtained by model analysis using empirical Havriliak-Negami elements and by temperature adjustments with respect to the conductivity of the YSZ layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.10
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• pp.1069-1074
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• 2014

In this study, the piezoelectric characteristics of a piezoelectric paint sensor were investigated in relation to the poling time. This piezoelectric paint sensor was composed of PNN-PZT powder and epoxy resin with a 1:1 weight ratio. The dimensions of the paint specimen were $40{\times}10{\times}1mm^3$, and the top and bottom sides were both coated with a silver paste to create electrodes. During the poling treatment, the poling time was controlled to examine the effect of the piezoelectric properties, while the poling temperature was fixed at room temperature and the electric field was set to 4 kV/mm. The piezoelectric properties were measured by comparing the output voltage from the paint sensor to the force signal from an impact hammer when the impact hammer hit the specimen. In conclusion, the optimal poling conditions were found to be an electric field of 4 kV/mm and a poling time of around 30 min at room temperature.