• Title/Summary/Keyword: Titanium film

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Studies on Film Growth and Mechanical Properties of TiN by Chemical Vapor Deposition (화학증착에 의한 TiN 박막의 제조 및 기계적 성질에 관한 연구)

  • 김시범;김광호;천성순
    • Journal of the Korean Ceramic Society
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    • v.26 no.1
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    • pp.21-30
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    • 1989
  • Titanium Nitride (TiN) was deposited onto the SKH9 tool steels by chemical vapor deposition (CVD) using a gaseous mixture of TiCl4, N2, and H2. The effects of the deposition temperature and input gas composition on the deposition rate, microstructure, preferred orientation, microhardness and wear resistance of TiN deposits were studied. The experimental results showed that the TiN deposition is thermally activated process with an apparent activation energy of about 27Kcal/mole in the temperature range between 1200$^{\circ}$K and 1400$^{\circ}$K. As H2/N2 gas input ratio increased, the deposition rate increased, showed maximum at H2/N2 gas input ratio of 1.5 and then decreased. Mechanical properties such as microhardness and wear resistance have close relation with the microstructure and preferred orientation of TiN deposits. It is suggested that the equiaxed structure with random orientation increases the microhardness and wear resistance of TiN deposits.

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Ohmic Contact Formation of SiC for Harsh Environment MEMS Using a TiW Thin-film (TiW 박막을 이용한 극한 환경 MEMS용 3C-SiC의 Ohmic contact 형성)

  • Chung, Soo-Yong;Noh, Sang-Soo;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.04b
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    • pp.133-136
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    • 2004
  • In this study, the characteristics of 3C-SiC ohmic contact were investigated. Titanium-tungsten(TiW) films were used for contact metalization. The ohmic contact resistivity between 3C-SiC and TiW was measured by HP4155 and then calculated with the circular transmission line method(C-TLM). And also the physical properties of TiW and the interface between TiW and 3C-SiC were analyzed using XRD and AES. TiW films make a good role of a diffusion barrier and their contact properties with 3C-SiC are stable at high temperature.

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ITiO films prepared by magnetic null discharge sputtering for DSCs application (자기중성방전 스퍼터에 의한 DSCs용 ITiO 박막제작)

  • Han, Deok-Woo;Endrowednes, Kuantama;Kwak, Dong-Joo;Sung, Youl-Moon
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1150-1151
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    • 2008
  • Titanium-doped indium oxide (ITiO) films were prepared on soda-lime glass substrate using a magnetic null discharge (MND) sputter source. The ITiO thin films containing 10 wt.% Ti showed the minimum resistivity of ${\rho}=5.5{\times}10^{-3}{\Omega}cm$. The optical transmittance increases from 70% at 450 nm to 80% at 700 nm in visible spectrum. The surface roughness of the sample showed a change from 10 nm to 50 nm. The ITiO film used for TCO layer of DSCs exhibited an energy conversion efficiency of about 3.8 % at light intensity of 100 $mW/cm^2$.

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Numerical Modeling of Deposition Uniformity in ICP-CVD System (수치모델을 이용한 ICP-CVD 장치의 증착 균일도 해석)

  • Joo, Jung-Hoon
    • Journal of Surface Science and Engineering
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    • v.41 no.6
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    • pp.279-286
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    • 2008
  • Numerical analysis is done to investigate which would be the most influencing process parameter in determining the uniformity of deposition thickness in TiN ICP-CVD(inductively coupled plasma chemical vapor deposition). Two configurations of ICP antenna are modeled; side and top planar. Side and top gas inlets are considered with each ICP antenna geometries. Precursor for TiN deposition was TDMAT(Tetrakis Diethyl Methyl Amido Titanium). Two step volume dissociation of TDMAT is used and absorption, desorption and deposition surface reactions are included. Most influencing factors are H and N concentration dissociated by electron impact collisions in plasma volume which depends on the relative positions of gas inlet and ICP antenna generated hot plasma region. Low surface recombination of N shows hollow type concentration, but H gives a bell type distribution. Film thickness at substrate edges is sensitive to gas flow rate and at high pressures getting more dependent on flow characteristics.

Molecular Layer Deposition of Titanium Nitride Cross-linked Benzene Using Titaniumchloride and 1,4-Phenylenediamine

  • Han, Gyu-Seok;Yang, Da-Som;Kim, Se-Jun;Seong, Myeong-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.305-305
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    • 2012
  • The organic-inorganic hybrid polymer thin films were deposited using the gas phase method which known as molecular layer deposition (MLD). Titaniumchloride (TiCl4) and 1,4-phenylenediamine (PD) were used as monomers to deposit hybrid polymer. Self-terminating nature of TiCl4 and PD reaction were demonstrated by growth rate saturation versus precursors dosing time. Infrared spectroscopic and X-ray photoelectron spectroscopy were employed to determine the chemical composition and state of hybrid polymer thin films. Layer by layer growth was showed by increasing UV-VIS absorption peak of hybrid polymer thin films.

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Precursor Events in Environmentally Assisted Cracking Behaviour of Light Metals

  • Raja, V.S.
    • Corrosion Science and Technology
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    • v.15 no.4
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    • pp.153-158
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    • 2016
  • Light metal alloys of Mg, Ti, and Al undergo environmentally assisted cracking (EAC). Passive film breakdown and pitting are not only precursor events for stress corrosion, but can accelerate hydrogen evolution that is responsible for hydrogen embrittlement. This is clearly demonstrated in the case of Mg and Ti alloys. The so-called innocuous precipitates, which do not directly participate in either alloy strengthening or EAC can be effective precursors for initiating EAC. This aspect is highlighted using high strength aluminium alloys. Such behaviours lead to a paradigm shift in the design of alloys with resistance to EAC.

Structure Analysis of $BaTiO_3$ Film on the MgO(001) Surface by Time-Of-Flight Impact-Collision Ion Scattering Spectroscopy

  • Yeon Hwang;Lee, Tae-Kun;Ryutaro Souda
    • Proceedings of the Korea Crystallographic Association Conference
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    • 2002.11a
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    • pp.17-17
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    • 2002
  • Time-of-flight impact collision ion scattering spectroscopy (TOF-ICISS) was applied to study the geometrical structure of the epitaxially grown BaTiO₃ layers on the MgO(100) surface. Hetero-epitaxial BaTiO₃ layers can be deposited by the following steps: first thermal evaporation of titanium onto the MgO(100) surface in the atmosphere of oxygen at 400℃, secondly thermal evaporation of barium in the same manner, and finally annealing at 800℃. Well ordered perovskite BaTiO₃ was confirmed from the ICISS spectra and reflection high electron energy diffraction (RHEED) patterns. It was also revealed that BaTiO₃ had cubic structure with the same lattice parameter of bulk phase.

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Processing and Characterization of RF Magnetron Sputtered TiN Films on AISI 420 Stainless Steel (AISI 420 stainless steel 기판위에 D.C magnetron sputtering 법으로 제조한 TiN 박막의 특성 평가)

  • Song, Seung-Woo;Choe, Han-Cheol;Kim, Young-Man
    • Journal of Surface Science and Engineering
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    • v.39 no.5
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    • pp.199-205
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    • 2006
  • Titanium nitride (TiN) coatings were produced on AISI 420 stainless steel by DC magnetron sputtering of a Ti target changing the processing variables, such as the flow rate of $N_2/Ar$, substrate temperature and the existence of Ti interlayer between TiN coatings and substrates. The hardness and residual stress in the films were investigated using nanoindentation and a laser scanning device, respectively. The stoichiometry and surface morphology were investigated using X-Ray Diffraction and SEM. The corrosion property of the films was also studied using a polarization method in NaCl (0.9%) solution. Mechanical properties including hardness and residual stress were related to the ratio of $N_2/Ar$ flow rate. The corrosion resistance also was related to the processing variables.

Effects of Nb Addition on Microstructure and Oxidation Behavior of Ti Alloy (Nb이 첨가된 Ti합금의 미세 조직 및 산화 거동)

  • 이도재;이광민;이경구;박범수;김수학;전충극;윤계림
    • Journal of Surface Science and Engineering
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    • v.37 no.1
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    • pp.58-63
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    • 2004
  • The oxidation behavior of Ti-Nb alloys was studied in dry atmosphere. After vacuum arc melting and hot rolling treatment, Ti-Nb alloys were oxidized at $450^{\circ}C$$750^{\circ}C$. The oxidation behaviors between matrix and oxide scale were analyzed by SEM, XPS and XRD. Ti-Nb alloys had higher oxidation resistance than pure Ti at $750^{\circ}C$. XPS analysis of oxide film revealed that $TiO_2$ oxide was formed on the top of surface. The weight gains during the oxidation increase rapidly at temperature above $600^{\circ}C$ which obey the parabolic law.

Effect of a ZnO Buffer Layer on the Structural, Optical and Electrical Properties of TIO/ZnO Bi-layered Films

  • Choe, Su-Hyeon;Park, Yun-Je;Choi, Jin-Young;Kim, Daeil
    • Journal of Surface Science and Engineering
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    • v.52 no.6
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    • pp.289-292
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    • 2019
  • Transparent and conducting titanium doped indium oxide (TIO) thin films were deposited by RF magnetron sputtering on zinc oxide (ZnO)-coated glass substrates to investigate the effect of the ZnO buffer layer on optical and electrical properties of TIO/ZnO bi-layered films. TIO 90 nm / ZnO 10 nm films having a lower resistivity (3.09×10-3 Ωcm) and a higher visible transmittance (80.3%) than other TIO/ZnO films were prepared in this study. Figure of merit results indicate that a 10 nm thick ZnO thin film is an effective buffer layer that enhances optical transmittance and electrical conductivity of TIO films without intentional substrate heating or post-deposition annealing.