• Bulletin of the Korean Chemical Society
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• v.27 no.2
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• pp.189-190
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• 2006

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.1
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• pp.43-48
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• 2015

Silver nanowire (AgNW) is a material that is increasingly being used for transparent electrodes, as a substitute for indium tin oxide (ITO), owing to its flexibility, high transmittance to sheet resistance ratio, and simple production process. This study involves manufacturing large-area organic photovoltaic cells (OPVs) deposited on AgNW electrodes. We compared the efficiency of OPVs with ITO and AgNW electrodes. The results verified that an OPV with an AgNW electrode performed better than that with an ITO electrode. Furthermore, by using the knife coating method, we successfully fabricated large-area OPVs without the loss of efficiency. Use of AgNW instead of ITO demonstrated that an OPV could be produced on various substrates by the solution process method, dropping the productions costs significantly. Additionally, by using the knife coating method, the process time and amount of wasted solution are reduced. This leads to an increase in the efficient fabrication of the OPV.

• Journal of IKEEE
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• v.20 no.2
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• pp.171-173
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• 2016

In this study, we fabricate a high efficiency heater consisting of the indium tin oxide (ITO) nanoparticle (NP)-paste and polydimethylsiloxane (PDMS) and investigate the effect of PDMS on temperature maintenance of the heater through the comparison with the PDMS-free ITO film heater. Compared to the ITO film heater, the temperature of the PDMS/ITO film heater lasts 1.5 times longer. And the power consumption of the PDMS/ITO film heater is reduced by 35%, owing to the low thermal conductivity of the PDMS layer.

• Bulletin of the Korean Chemical Society
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• v.35 no.7
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• pp.2072-2076
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• 2014

Sub-micrometer size gold particles were electrodeposited on a transparent fluorine-doped tin oxide (FTO) from acetonitrile solution containing $AuCl_4{^-}$ and tetramethylammonium tetraflouroborate (TMATFB) for detecting $NO_2{^-}$. A series of two-electron ($2e^-$) and one-electron ($1e^-$) reductions of the $AuCl_4{^-}-AuCl_2{^-}-Au$ redox systems were observed at FTO and a highly stable and homogeneous distribution of Au on FTO (Au/FTO) was obtained by stepping the potential from 0 to -0.55 V (vs. Ag/$Ag^+$). The Au/FTO electrode exhibited sufficiently high catalytic activity toward the oxidation of $NO_2{^-}$ with a detection limit (S/N = 3) and sensitivity of 2.95 ${\mu}M$ and 223.4 ${\mu}A{\cdot}cm^{-2}{\cdot}mM^{-1}$, respectively, under optimal conditions. It exhibited an interference-free signal for $NO_2{^-}$ detection with excellent recoveries from real samples.

• Journal of Sensor Science and Technology
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• v.24 no.4
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• pp.219-223
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• 2015

Indium free consisting of three alternating layers GTO/Ag/GTO has been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting electrodes and the structural, electrical and optical properties of the gallium tin oxide (GTO) films were carefully studied. The gallium tin oxide thin films deposited at room temperature are found to have an amorphous structure. Hall Effect measurements show a strong influence on the conductivity type where it changed from n-type to p-type at $700^{\circ}C$. GTO/Ag/GTO multilayer structured electrode with a few nm of Ag layer embedded is fabricated and show the optical transmittance of 86.48% in the visible range (${\lambda}$ = 380~770 nm) and quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$. The resultant power conversion efficiency of 2.60% of the multilayer based OPV (GAG) is lower than that of the reference commercial ITO. GTO/Ag/GTO multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.1-7
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• 2004

Tin plating on component finishes may grow whiskers under certain conditions, which may cause failures in electronics equipment. To protect the environment, 'lead-free' among component finishes is being promoted worldwide. This paper presents the evaluation results of whiskers on two kinds of lead-free plating materials at the plating temperature and under the reliability test. The rising plating temperature caused increasing the size of plating grain and shorting the growth of whisker. The whisker was grown under the temperature cycling the bent type in matt Sn plating and striated type in malt Sn-Bi. The whisker growth in Sn-Bi plating was shorter than that in Sn plating. In FeNi42 leadframe, the $7.0{\~}10.0{\mu}m$ diameter and the $25.0{\~}45.0{\mu}m$ long whisker was grown under 300 cycles. In the 300 cycles of Cu leadframe, only the nodule(nuclear state) grew on the surface, and in the 600 cycles, a $3.0{\~}4.0{\mu}m$ short whisker grew. After 600 cycles, the ${\~}0.34{\mu}m$ thin $Ni_3Sn_4$ formed on the Sn-plated FeNi42. However, we observed the amount of $0.76{\~}1.14{\mu}m$ thick $Cu_6Sn_5$ and ${\~}0.27{\mu}m$ thin $Cu_3Sn$ intermetallics were observed between the Sn and Cu interfaces. Therefore, the main growth factor of a whisker is the intermetallic compound in the Cu leadframe, and the coefficient of thermal expansion mismatch in FeNi42.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.107-109
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• 2000

The crystallization process and the electrical properties of amorphous tin-doped indium oxide (ITO) films have been studied in contrast with those of undoped indium oxide (IO) films. Amorphous ITO and IO films were prepared by magnetron sputtering succeeded by annealing in the air at various temperatures. ITO films showed higher crystallization temperature compared with that of IO films, suggesting an excess free energy caused by the repulsion between the active donors ($Sn^{4+}$). The analysis of the electrical properties alternated with the phased annealing of films provided essential information for understanding the conduction mechanisms of ITO. It was also revealed that the amorphous IO/ITO films showed oxidation around $100^{\circ}C$ in contrast with crystalline IO/ITO films with the oxidation temperature above $200^{\circ}C$.

• Journal of Powder Materials
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• v.21 no.2
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• pp.142-146
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• 2014

Fundamental experiences have been studied for development of pre-treatment process of Sn by-products such as solders. Dry and wet separation/recovery processes were considered by the differences of physical properties. The by-products, which are analyzed by solder metal and oxides. The metal and oxide were simply separated by dry ball-milling process for 12 hours, after that recovery metal powder might be reusable as lead or lead-free solders. In terms of wet separation process, samples were dissolved in $HNO_3+H_2O_2$ and the precipitation were analyzed by $SnO_2$. Overall efficiency of recovery might be increasing via developing simple pre-treatment process.

• Journal of the Korean Ceramic Society
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• v.29 no.1
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• pp.48-52
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• 1992

Indium tin oxide (ITO) layers are of considerable interest on account of the combination of properties they provide high electrical conductivity, high infrared reflection with high solar energy transmission, high transmission in the visible range. We are concerned about the variation of the spectral transmittances and sheet resistances as the thickness of SiO2-ZrO2 barrier layer and ITO layers and heat treating conditions are changed. Transmittances and reflectivities were studied by measuring UV-VIS-NIR-, FT-IR spectroscopy. ITO films are crack free, homogeneous and of polycrystalline cubic structure. The microstructure of good ITO films shows a narrow grain size distribution and mean value of 100 nm. The selectivity of absorbing properties is improved by increasing the thickness of ITO films. The increase of sheet resistance of ITO films are due to the increase in the reaction between films and glass substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.148-149
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• 2007

현재 전자부품 시장은 RoHS 규정으로 인하여 lead free화가 진행되고 있으며 많은 주목을 받고 있다. 본 논문에서는 반도체 패키지 및 부품표면일장에서 사용 되는 무전해 주석 도금과정 중 산 탈지 후 막의 표면 거칠기 정도가 도금 후의 표면 거칠기 정도에 미치는 영향을 평가 한다. 실험의 효율성을 높이기 위해 통계적인 실험계획법을 사용하였으며 실험의 횟수를 줄이고 표면 거칠기 정도는 이미지 프로세싱을 통하여 분석하였으며 통계적인 모델링을 통해 micro etch가 도금 표면의 거칠기에 주는 영향을 분석하였다.